FMP1 Search Results

Contextual Info: FMP1617CCx CMOS LPRAM Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Apr. 19th, 2006 Preliminary 0.1 Revised P/N according to the new P/N system Jun.01st , 2006

Contextual Info: FMP1 Diodes Switching diode FMP1 zExternal dimensions Unit : mm zLand size figure (Unit : mm) 2.9±0.2 ＋0.1 Each lead has 0.3 －0.05各リードとも同寸法 zFeatures 1) Small mold type. (SMD5) 2) High reliability 0.15±0.1 0.06 0.45 0.35

IMN11

Abstract: FMN1
Contextual Info: FMN1/FMP1 IMN10/IMN11/IMP11 'f ^ — K /D iod es FMN1/FMP1 IM N 1 0 /IM N 1 1 /IM P 1 1 7 < -J S - T - tU K it-< - K T L"f H igh-speed Switching M in i-M o ld Diode Arrays • s ii • fl-J f^ a H /D im e n s io n s Unit : mm 1) SMT (SC-59)£[5]—f * f l C 3 3Z.l±

IMN11

Abstract: UMN1N FMN1
Contextual Info: Diodes Switching diodes Ultra High-Speed Switching Diode Array FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N • E x te rn a l dim ensions Units: mm diodes •A p p lic a tio n s Ultra high speed switching UMN1N/UMP1N _2_& ± 0_2 o.a±o.i m W0~01

X1-77

Abstract: X-1-77 FMP-18 rectifier data 51939
Contextual Info: FMP 18.48 Rectifier Data Sheet Description The FMP18.48 rectifier incorporates resonancesoft-switching technology to reduce component stresses, providing increased system reliability and a best-in-class efficiency. With a wide-input operating voltage range of 84-300 VAC and linear

Contextual Info: FMP1 Diodes Switching diode FMP1 zExternal dimensions Unit : mm zLand size figure (Unit : mm) 0.8MIN. 2.9±0.1 －0.05 (2) 0.45 0.35 0.35 0.45 0.6 ＋0.2 －0.1 0～0.1 (5) (4) (3) 0.8±0.1 1.9±0.2 0.95 0.95 SMD5 1.1±0.2 0.01 0.33±0.03 zConstruction

DA223

Abstract: DA226U DAN202C DA113 DA121 DA227 DAN202K DAN202U DAN222 DAP202C
Contextual Info: □¡ode Arrays Part No. Application High-Speed Switching 2 Vfs Connected in series DA227 DAN202C DAN202K DAN202U DAN222 DAP202C DAP202K DAP202U DAP222 FMN1 UMN1 FMP1 UMP1 IMN10 IMN11 MP11 UMP11 UMN11 DA106K DA106U DA112 DA113 DA114 DA115 DA116 DA118 DA119

fmp*12n50e

Abstract: FMP12N50E
Contextual Info: FMP12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

Contextual Info: FMP1 Data Sheet Switching Diode FMP1 Dimensions Unit : mm Applications Ultra high speed switching Land size figure (Unit : mm) 2.9±0.2 ＋0.1 各リードとも同寸法 Each lead has 0.3 －0.05 Features 1) Small mold type. (SMD5) 2) High reliability.

fmp16n50

Abstract: fmp16n50e
Contextual Info: FMP16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

fmp16n60e

Contextual Info: FMP16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

diodes

Abstract: IMP11 Switching Diodes IMN10 IMN11 UMN11N UMP11N high-speed switching Diode Array UMN1N FMN1
Contextual Info: Ultra high–speed switching diode array FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N FExternal dimensions Units: mm High–speed switching diodes FApplications Ultra high speed switching Switching diodes Diodes FFeatures 1) Multiple diodes in one small surface mount

sot-363 MARKING n10 diode

Abstract: SOT-363 marking n10 EMP11 IMN11 marking N11 diode SOT marking P11 EMN11 IMN10 IMP11 UMN11N
Contextual Info: Diodes EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 / EMP11 / FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Unit : mm UMN1N / UMP1N 5 0.15±0.05 +0.2 1 2 2.8±0.2 ∗

DA228K

Contextual Info: Diode Arrays Application Part No. DA227 DAN202C DAN202K - SST SMT - UMT - EM3 SST SMT Fig.1 UMT Fig .6 EM3 Fig .6 Fig .2 4 4 100 4 80 100 4 DAP202U 80 100 4 DAP222 FMN1 80 80 100 4 25 UMN1 FMP1 80 25 25 4 4 UMP1 80 MN10 M N 11 80 80 M P11 80 UMP11 80 UMN11

SOT-363 marking n10

Abstract: sot-363 MARKING n10 diode IMN11 IMN10 IMP11 UMN11N UMP11N sot363 p11 N10 SOT363 UMN1N
Contextual Info: FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N !External dimensions Units : mm FMN1 / FMP1 UMN1N / UMP1N 0.15 +0.1 −0.06 (All leads have the same dimensions.)

FMP16N50E

Abstract: DT78K
Contextual Info: FMP16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

Contextual Info: FMP13N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

Contextual Info: FMP1 Diodes Switching diode FMP1 zExternal dimensions Unit : mm zLand size figure (Unit : mm) 2.9±0.2 0.15±0.1 0.06 ＋0.1 0.45 0.35 (2) ＋0.2 －0.1 2.8±0.2 (1) 0～0.1 (5) (4) (3) 0.8±0.1 1.9±0.2 0.95 0.95 SMD5 0.3～0.6 zConstruction Silicon epitaxial planar

fmp12n60es

Contextual Info: FMP12N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching

OA115

Abstract: da226u DA106U
Contextual Info: Diode Arrays Vr V lo (mA) 80 100 trr Max. (ns) 4 80 100 4 80 80 4 4 - 80 80 80 100 100 100 100 100 4 4 4 - 80 100 4 - 80 80 100 - 25 4 4 SST SM T UMT EM 3 - FM T Fig .6 Fig .2 UMN1 FMP1 UMP1 80 25 4 Fig.14 25 4 - UM5 80 FMT Fig .7 80 25 4 UM5 M N10 4 4 MP11

FMN1

Abstract: IMN11 UMN1N
Contextual Info: Diodes Switching diodes Ultra High-Speed Switching Diode Array FMN1/FMP1 /IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Ultra high speed switching •External dimensions Units: mm diodes •Applications UMN1N/UMP1N FMN1/FMP1 _ 2 9± 0._2 0.95 0.95 I 1)Three or four diodes contained in sam e area

sot-363 MARKING n10 diode

Abstract: IMN11 SOT-363 marking n10 transistor marking N1 IMN10 IMP11 UMN11N UMP11N marking N11 diode UMN1N
Contextual Info: FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Units : mm FMN1 / FMP1 UMN1N / UMP1N +0.1 −0.06 (All leads have the same dimensions.)

80000h-FFFFFh

Contextual Info: FMP1617CAx CMOS LPRAM Document Title 1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Apr.19th, 2006 Preliminary 0.1 Revised P/N according to the new P/N system Jun.01st , 2006

rohm smd5 diode

Contextual Info: Data Sheet Switching Diode FMP1 Dimensions Unit : mm Applications Ultra high speed switching Land size figure (Unit : mm) 2.9±0.2 ＋0.1 各リードとも同寸法 Each lead has 0.3 －0.05 Features 1) Small mold type. (SMD5) 2) High reliability.