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    fmp16n50

    Abstract: fmp16n50e
    Contextual Info: FMP16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


    Original     		fmp16n50eso-220abfmp16n50fmp16n50e PDF

    FMV07N90E

    Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
    Contextual Info: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)


    Original     		o-220o-220ffmh28n50esfmh23n50es+16fmh21n50esfmh280efmc06n80efmi09n70efmi07n70efmc09n70efmv07n90efmh*23n50efmp08n80efmv07n70efmv06n80efmc07n65efmv13n80ed2packfmi07n90efmv07n65e PDF

    16N50E

    Abstract: ic MARKING QG
    Contextual Info: DATE CHECKED Nov.-21-'08 CHECKED Nov.-21-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		fmp16n50esms5f7224h04-004-05h04-004-03+216n50eic marking qg PDF