FM25W256 Search Results

AEC-Q100-003

Abstract: FM25W256
Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25W256 256Kb FRAM Wide Voltage Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25W256-Gtr

Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25W256 256-Kbit 32 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: Preliminary FM25W256 256Kb FRAM Wide Voltage Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25W256

Abstract: FM25W256-G FM25W256-S
Contextual Info: Preliminary FM25W256 256Kb FRAM Wide Voltage Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25W256 256Kb FRAM Wide Voltage Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25W256

Abstract: FM25W256-G FM25W256-S
Contextual Info: Preliminary FM25W256 256Kb FRAM Wide Voltage Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25W256

Abstract: DSASW0033415
Contextual Info: Errata for FM25W256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 004 rev. AB, Date Code 0411 Date May 20, 2004 Product Marking FM25W256 (all package types) Initial testing has identified a few problems with FM25W256 samples.

FM25W256

Abstract: FM25W256GTR FM25W256-GTR microcontroller bus system "test bus"
Contextual Info: Pre-Production FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25W256-G

Abstract: FM25W256 AEC-Q100-002 RIC1039
Contextual Info: Preliminary FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM33256B

Contextual Info: FM33256B 256-Kbit 32 K x 8 Integrated Processor Companion with F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) ❐ Logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

RIC0639

Abstract: FM25256B FM25256B-G FM25W256 FM25V02 -G
Contextual Info: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25256-G

Abstract: sck-15 FM25256 FM25256-S NAT 3 transistor FM25W256
Contextual Info: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM33256

Contextual Info: FM33256B 3V Integrated Processor Companion with F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Low VDD Detection Drives Reset • Watchdog Window Timer • Early Power-Fail Warning/NMI

fm25256

Abstract: FM25256-G FM25256-S
Contextual Info: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25W256

Abstract: fm33256b FM33256B-G
Contextual Info: Preliminary FM33256B 3V Integrated Processor Companion with F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Low VDD Detection Drives Reset  Watchdog Window Timer  Early Power-Fail Warning/NMI

FM25256

Abstract: FM25256-G FM25256-S
Contextual Info: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25256

Abstract: FM25256-G FM25256-S
Contextual Info: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process