FM25L Search Results

Contextual Info: FM25L04B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

FM25L16B

Contextual Info: AEC Q100 Grade 1 Compliant FM25L16 – Automotive Temp. 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM25L256 256Kb FRAM Serial 3V Memory – Extended Temp. Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

RIC1147

Contextual Info: Preliminary FM25LX64 64Kb Serial 1.5V F-RAM Memory FEATURES 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 Year Data Retention at +75ºC  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: FM25L16B-GTR fm25l16b-g
Contextual Info: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

RG5L51

Abstract: FM25L512 FM25L512-DG
Contextual Info: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM25L256B 256Kb FRAM Serial 3V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM25L256 256Kb FRAM Serial 3V Memory – Commercial Temp. Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L04

Abstract: FM25L04-GA Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25L04 – Automotive Temp. 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

R5L16B

Abstract: AEC-Q100-002 FM25L16B FM25L16B-DG FM25L16B-G
Contextual Info: Preliminary FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25V05

Abstract: FM25L512 25V05 AN309
Contextual Info: AN309 Differences in FM25L512 and FM25V05 Applies to 512Kb SPI F-RAM Devices DESCRIPTION This document points out the differences the FM25L512 and FM25V05 F-RAM devices. For most designs, the FM25V05 device can be considered a superset of the FM25L512. The two devices are

RG5L51

Contextual Info: Pre-Production FM25L512 512Kb F-RAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L256

Abstract: marking AF
Contextual Info: Errata for FM25L256 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 001 rev. AF, Date Code 0431 Date August 24, 2004 Product Marking FM25L256 (all package types) Initial testing has identified a problem with FM25L256 Rev AF samples.

Contextual Info: FM25L16B 16-Kbit 2 K x 8 Serial (SPI) F-RAM 16-Kbit (2 K × 8) Serial (SPI) F-RAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

FM25L04B

Abstract: FM-25
Contextual Info: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25L256

Abstract: FM25L256-DG fm25l256-g FM25L256-S fm25l256s
Contextual Info: Pre-Production FM25L256 256Kb FRAM Serial 3V Memory – Extended Temp. Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L04

Abstract: FM25L04-G FM25L04-S LTER
Contextual Info: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme

lter

Abstract: FM25L16 AEC-Q100 FM25L16-DG FM25L16-G FM25L16-GTR
Contextual Info: FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

Contextual Info: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25L16-G

Abstract: FM25L16-DG FM25640 FM25L16
Contextual Info: Preliminary FM25L16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

virage

Abstract: ARM Cortex A8 TSMC 40nm powerpc 7448 LG chem fanuc soc 916 tanner tools D945GCLF2 "ARM Cortex A8"
Contextual Info: Energy Optimizers Selects Ramtron FM25L512 F-RAM for Plogg ~ EDA Geek Page 1 of 1 home : : contact : : embedded star : : fpga : : eda blog EDA Geek - electronic design automation, semiconductor, embedded system Ads by Google Zigbee Technology Flash Memory Cell

fram

Abstract: TDFN-8 eeprom FM25L512
Contextual Info: FRAM Page 1 of 1 FRAM Arbeitet praktisch unbegrenzt Eingebaut im drahtlosen Energiemanagement-Stecker der Plogg-Serie sorgt der F-RAM-Baustein FM25L512 für Nodelay-Schreibvorgänge und niedrigen Stromverbrauch. Dazu kommt die praktisch unbegrenzte Betriebslebensdauer von rd. 100.000 Mrd. Schreibzyklen. EEPROM dagegen kommen auf weniger als eine Mio.