FM25640 Search Results

FM25640-P

Abstract: SCK SDA WP
Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

FM25040

Abstract: FM25640 FM25640-GA Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25640 – Automotive Temp. 64Kb FRAM Serial Memory Features Sophisticated Write Protection Scheme • Hardware Protection • Software Protection 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes

Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

AL3502G1

Abstract: AEC-Q100-003
Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25640B – Automotive Temp. 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25640B – Automotive Temp. 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

FM25640B-G

Contextual Info: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced high-reliability ferroelectric process

FM25xxx

Abstract: AN302 AN-302 FM25640 1G126
Contextual Info: AN-302 FRAM SPI Reads & Writes and Data Protection During Power Cycles Applies to All SPI FRAM Devices except FM25640 OVERVIEW Non-volatile FRAM memory offers tremendous write speed. This feature is most evident in the high speed serial SPI and bytewide parallel memories. Hundreds of bytes can be written in tens of

Contextual Info: AEC Q100 Grade 1 Compliant FM25640B – Automotive Temp. 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced high-reliability ferroelectric process

Contextual Info: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced high-reliability ferroelectric process Sophisticated Write Protection Scheme

FM25640

Abstract: FM25640-S FM25040 FM25640-P MS-001
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

FM25040

Abstract: FM25640 FM25640-GA Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25640 – Automotive Temp. 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25040

Abstract: FM25640 FM25640-G FM25640-S
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: FM25640B 64-Kbit 8 K x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

FM25640-S

Abstract: FM25040 FM25640
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25640-GTR

Abstract: AEC-Q100 FM25040 FM25640 FM25640-G FM25640-S
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25640-S

Abstract: FM25640 FM25640-P FM25C160 FM25C160-P FM25C160-S
Contextual Info: Errata for FM25640 and FM25C160 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 Errata Number 001 Date May 23, 2002 Product Marking FM25640-P, FM25640-S, FM25C160-P, FM25C160-S 1 Recent testing has identified a problem with the FM25640 and FM25C160.

AEC-Q100-002

Abstract: FM25040 FM25640B
Contextual Info: Preliminary FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25640-GTR

Abstract: AEC-Q100 FM25040 FM25640 FM25640-G FM25640-S
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25640-S

Abstract: FM25040 FM25640 FM25640-G
Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25640

Abstract: FM25640-P FM25640-S
Contextual Info: Prelim inary FM25640 R aM T R O N 64Kb FR A M Serial M emory Features Sophisticated W rite P rotection Schem e 64K bit Ferroelectric Nonvolatile RAM • H ardw are protection • Software protection • Organized as 8,192 x 8 bits • High endurance 10 Billion 1 0 10 read/writes

Contextual Info: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced high-reliability ferroelectric process

AEC-Q100-002

Abstract: FM25040 FM25640B
Contextual Info: Preliminary FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process