FM24C Search Results

Contextual Info: FM24C32A 2-Wire Serial EEPROM Data Sheet May. 2011 Data Sheet FM24C32A 2-Wire Serial EEPROM Ver 1.0 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION;

Contextual Info: FM24C32A/64A Two-wire Serial EEPROM Data Sheet Jan. 2008 Data Sheet FM24C32A/64A Two-wire Serial EEPROM 1.0 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO

Contextual Info: FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Data Sheet May. 2011 Data Sheet FM24C02B/04B/08B/16B 2-Wire Serial EEPROM Ver 1.9 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION;

Contextual Info: FM24CL16B 16-Kbit 2 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

Contextual Info: FM24C16B 16-Kbit 2 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

FM24C64

Abstract: FM24C64E FM24C64L FM24C64LZ FM24C64V M08A MO153 MTC08 write protect
Contextual Info: FM24C64 – 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features FM24C64 is a 64Kbit CMOS non-volatile serial EEPROM organized as 8K x 8 bit memory. This device confirms to Extended IIC 2-wire protocol that allows accessing of memory in excess of

FM24CL04

Abstract: FM24CL04-G FM24CL04-S FM24CL64 FM24CL04-GTR FM24CL
Contextual Info: FM24CL04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Low Power Operation • 2.7V to 3.65V operation

FM24C256

Abstract: FM24W256 FM24C256-G
Contextual Info: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

RG4L64

Abstract: FM24CL64-GTR FM24CL64-DG FM24CL64-G FM24CL64-D AEC-Q100 FM24CL64 FM24CL64-DGTR FM24CL64-S
Contextual Info: FM24CL64 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Low Power Operation

FM24C04A

Abstract: FM24C04A-S FM24C64
Contextual Info: FM24C04A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM24CL64-S

Abstract: FM24CL64
Contextual Info: FM24CL64 64Kb Serial 3V FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited Read/Write Cycles • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

Contextual Info: Preliminary FM24CL16 16Kb FRAM 2-wire Memory 2.7V-5.5V operation Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

24C64 pinout detail

Abstract: 24C64 WP st programming 24c64 24C64 24C64 WP FM24C64 FM24C64-P FM24C64-S M24C64 MS-001
Contextual Info: FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

FM24C256

Abstract: M08A C256
Contextual Info: FM24C256 256 KBit 2-Wire Bus Interface Serial EEPROM with Write Protect General Description Features The FM24C256/C256L/C256LZ devices are 256 Kbits CMOS nonvolatile electrically erasable memory. These devices offer the designer different low voltage and low power options. They

fm24c16

Abstract: FM24C16-P fram FM24C16-S MS-001
Contextual Info: FM24C16 16Kb FRAM Serial Memory Features Low Power Operation • 5V operation • 150 µA Active Current 100 kHz • 10 µA Standby Current 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion (1010) Read/Writes

FM24CL04

Abstract: FM24CL04-G FM24CL04-S FM24CL64 FM24CL04/5962-9552501MRX/OP271ARC/883C-datasheet
Contextual Info: FM24CL04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Writes • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

flash "high temperature data retention" mechanism

Abstract: EEPROM retention testing FM24C16 flash Activation Energy
Contextual Info: Technology Note FM24C16 Data Retention Characterization – Updated 5/00 Overview Ramtron technology notes provide technical insight into the operation of ferroelectric memory technology. They explain the fundamental performance of one or more aspects of ferroelectric

FM24CL16

Abstract: 24CL16 FM24C16 FM24CL16-G FM24CL16-S
Contextual Info: FM24CL16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM24C64

Abstract: FM24C64A FM24C64-P FM24C64-S MS-001
Contextual Info: Preliminary FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: FM24C04 4Kb F RAM ^ R a M lR O N Serial Memory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

Contextual Info: FM24C04 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24CL16 16Kb FRAM Serial 3V Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • Unlimited Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface

FM24C64

Abstract: FM24C64E FM24C64L FM24C64LZ FM24C64V M08A MO153 MTC08
Contextual Info: FM24C64 – 64K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features FM24C64 is a 64Kbit CMOS non-volatile serial EEPROM organized as 8K x 8 bit memory. This device confirms to Extended IIC 2-wire protocol that allows accessing of memory in excess of

FM24CL64

Abstract: 1E16 FM24CL64-S
Contextual Info: Preliminary FM24CL64 64Kb 2.7V-3.6V FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited read/write cycles • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process