FM10 Search Results

Contextual Info: Formosa MS Chip Schottky Barrier Diodes FM1020-T1 THRU FM1040-T1 Silicon epitaxial planer type Features SMC-T1 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.272 6.9 0.248(6.3)

Contextual Info: Formosa MS SMD Schottky Barrier Rectifier FM10L45-T2 List List. 1 Package outline. 2

2SK2710

Contextual Info: 2SK2710 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 600 V V(BR) DSS I D = 100µA, VGS = 0V nA VGS = ±30V I DSS 100 µA VDS = 600V, VGS = 0V A VTH 2.0 3.0 ±48 A Re (yfs)

IN5008

Abstract: 2SK2705 SHE10
Contextual Info: 2SK2705 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS µA VDS = 450V, VGS = 0V VTH 2.0 3.0 Re (yfs) 6.0 9.0 75 (Tc = 25ºC) W RDS (on) 4.0 0.48 0.57 V VDS = 10V, I D = 1mA

2SK1181

Contextual Info: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 8.5 ±52 (Tch ID (pulse) 150ºC) min 500 I D = 250µA, VGS = 0V

FM1060-T1

Abstract: FM1080-T1 FM1010
Contextual Info: Formosa MS FM1020-T1 THRU FM10100-T1 Chip Schottky Barrier Rectifier List List. 1 Package outline. 2

2SK2705

Contextual Info: 2SK2705 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±13 A ±52 PD A Re (yfs) 6.0 9.0 75 (Tc = 25ºC) W RDS (on) 400 mJ I D = 100µA, VGS = 0V

2SK2706

Contextual Info: 2SK2706 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 450 V V(BR) DSS VGSS ±30 V ID ±18 A ±72 85 (Tc = 25ºC) ID (pulse) *1 PD EAS *2 min 450 I GSS I DSS VTH 2.0 3.0 A

2SC4138

Abstract: 2SC4907 2SC4706 2sc3680
Contextual Info: Transistors for Switch Mode Power Supply For AC 80 to 130V input Specifications VCBO V VCEO (V) 250 200 Package IC (A) MT-25 (T0220) FM20 (T0220F) MT-100 (T03P) FM100 (T03PF) 2SC5271 5 2SC4073 2SC4418 5 2SC4662 2SC3832 2SC3890 7 2SC4130 500 400 10 2SC4138

fkp280a

Abstract: FKP280 SANKEN sanken power transistor B105 CF35 T02-001EA-050912 ha 2005 fet t02 "Sanken Electric"
Contextual Info: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)

Contextual Info: 2SK2709 Absolute Maximum Ratings External dimensions 2 . FM100 Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 600 V V(BR) DSS VGSS ±30 V ID ±8.5 A ±34 ID (pulse) *1 VTH 2.0 3.0 A Re (yfs) 5.0 7.0 RDS (on) 85 (Tc = 25ºC) W

200T1

Abstract: FM1010 MARKING CODE 42t marking 42t sod-123 M10
Contextual Info: WILLAS FM120-M+ FM1040-T1 THRUTHRU 10.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER SMC-T1RECTIFIERS PACKAGE-20V- 200V FM1200-M+ FM10200-T1 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: Formosa MS SMD Schottky Barrier Rectifier FM10L45-T7B List List. 1 Package outline. 2

2SC4385

Abstract: tl 0741 2SA1670 FM20 transistor 2sa1670 Sanken Transistor Mt 200 sanken audio
Contextual Info: SANKEN ELECTRIC CO LT» SSE D • 7nQ7m □□□□'124 313 « S A K J Silicon PNP Epitaxial Planar 3 3 r^ 2SA1670 e Outline Drawing 5 . .FM100 Application Exam ple : Audio and General Purpose Electrical Characteristics Symbol A j Ic = —2A,

FM101

Abstract: fm107
Contextual Info: FM101 - FM107 1.0A Surface Mount Fast Recovery Rectifiers SOD - 123FL Cathode Band Top View 1.9± 0.1 1.0±0.2 Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 2.8±0.1 1.4± 0.15 optimize board space.

T02-001EA-050912

Abstract: fkp280a
Contextual Info: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)

T02-001EA-050912

Contextual Info: N-Channel MOS FET FKP280A September, 2005 •Package-FM100 TO3P Full Mold ■Features ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed ■Applications ●PDP driving ●High speed switching ■Equivalent circuit Ｄ(2)

Contextual Info: External Dimensions unit: mm Fig. 1 FM20 Fig. 2 FM100-1 Normal specifications JL recognized specifications Normal s D e cifications eD°! n UL reognized specifications •- -*j * >n :y w * ‘ •V iT - t - - EEE Fig. 3 F M 100-2 Fig. 4 SLA 31 0 ¿4 A \

2SC5287

Abstract: 2SC5249 2SC3927 2SC4138
Contextual Info: • Transistors for Switch M ode Pow er Supply # For AC 80 to 130V input_ _ Specifications Package V cb o V ! V ce o (V Ic (A) 250 200 5 MT-25 (T0220) FM20 (T0220F) MT-100 ÍT03P) FM100 (T03PF) 2SC4138 2SC4296 2SC3833

2SK1192

Abstract: FM20
Contextual Info: 2SK1192 External dimensions 2 . FM100 Absolute Maximum Ratings Symbol Ta = 25ºC Ratings Unit Symbol min Unit max Conditions VDSS 60 V V(BR) DSS V I D = 250µA, VGS = 0V ±20 V I GSS ±500 nA VGS = ±20V ID ±40 A I DSS 250 µA VDS = 60V, VGS = 0V A

2SK1179

Abstract: FM20 on10m
Contextual Info: 2SK1179 External dimensions 2 . FM100 Absolute Maximum Ratings Symbol Ta = 25ºC Electrical Characteristics Ratings Unit Symbol (Ta = 25ºC) Ratings typ min Unit max VDSS 500 V V(BR) DSS V I D = 250µA, VGS = 0V VGSS ±20 V I GSS ±500 nA VGS = ±20V

Contextual Info: FM1062/FM1062A Low Voltage Transmission Circuits with Dialler Interface with EMC Specification May. 2008 FM1062/FM1062A Low voltage transmission circuits with dialler interface Ver2.1 Specification 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF

Contextual Info: N-Channel MOS FET FKP300A June, 2007 Features Package-FM100 TO-3P Full Mold Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings

Contextual Info: N-Channel MOS FET FKP250A June, 2007 Features Package-FM100 TO-3P Full Mold Low on-resistance Low input capacitance Avalanche energy capability guaranteed Applications PDP driving High speed switching Equivalent circuit D (2) G (1) S (3) Absolute maximum ratings