FLTBL72S Search Results

c2kc

Abstract: UKY 220 41 TM425 DM07S
Contextual Info: TEXAS 3961725 INSTR TEXAS - C A S I C / M E M O R Y> IN S T R 11 DEI 0 ^ 1 7 2 5 <ASIC/M EM O RY> 262,144 0040751 77C 40751 TM4256EC4, TM4257EC4 BY 4-BIT DYNAMIC RAM MODULES SEPTEM BER 9 1 8 5 - R EV ISED NOVEM BER 1985 C SINGLE-IN-LINE PACKAGE TOP VIEW

Contextual Info: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A- MARCH 1995 - REVISED JUNE 19BS Military Operating Temperature Range -55 °C to 125°C Performance Ranges: AC CESS AC CESS ACCESS ACCESS TIME TIME TIME TIME ROW COLUM N SER IAL SER IAL ADDRESS EN ABLE

d2172

Contextual Info: 0*^1725 OGTbl ' i û 3 • T IB P A L 1 6 L 8 -1 5 M , T I B P A L 1 6 R 4 1 5 M , T IB P A L 1 6 R 6 -1 5 M . T IB P A L 16 R 8 15M T IB P A L 1 6 L 8 -1 2 C T IB P A L 1 6 R 4 -1 2 C T IB P A L 16 R 6 -1 2 C TIB P A L 16 R 8 -1 2 C H IG H -P E R F O R M A N C E IMPACT PAL CIRCUITS

Contextual Info: TIBPAL22V10-7C, TIBPAL22V10-10M HIGH-PERFORMANCE IMPACT-X PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS014B - D3620, A U G U S T 1990 - REVISED SEPTEMBER 1992 C SUFFIX. . NT PACKAGE M SUFFIX. . JT PACKAGE TOP VIEW Second-Generation PLD Architecture High-Performance Operation:

Contextual Info: TE XA S INSTR 2S E A S I C / M E M O R Y D • 0^1725 □□77TÖ0 T ■ MPR68C64, MPR68CT64 8192-W ORD BY 8-BIT RAD IATIO N-H AR D ENED STATIC RAMs D3363, OCTOBER 1989 • • 28-PIN PACKAGE 8192 x 8 Organization Silicon-on-lnsulator (SIMOX) for Extreme

TMS44C251-10

Abstract: tms44c251 TMS44C251-12 TI 4116 dram a07t
Contextual Info: INSTR T T -t/é -z 3 -n m TMS44C251 262,144 BY 4BIT MULTIPORT VIDEO RAM ASIC/MEMORY DRAM: 262,144 Words x 4 Bits SAM: 512 Words x 4 Bits • AUGUST 1988 Bidirectional Data Transfer Function Between the DRAM and the Serial Data Register 4 x 4 Block Write Feature for Fast Area Fill

Contextual Info: TIBPAL22V10C, TIBPAL22V10AC, TIBPAL22V10AM HIGH-PERFORMANCE IMPACT PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS024 - D2943. OCTOBER 1 9 8 6 - REVISED MARCH 1992 • C SUFFIX. •NT PACKAGE M SUFFIX. . JT PACKAGE TOP VIEW Second-Generation PLD Architecture

SN54PLR19L8

Contextual Info: T E X A S ÏN S T R { A S I C / M E M O R Y } SD FIELDPROGRAMMABLE LOGIC I— _ _ - Ô 961725 n T YPES SN54PLR19L8, SN54PLR19R4. SN54PLR19R6, SN54PLR19R8 SN74PLR19L8, SN74PLR19R4, SN74PLR19R6, SN74PLR19R8 REGISTERED-INPUT FIXED-OR ARRAYS

D 304 x

Contextual Info: SMLS240B-NQVEMBER 1990-REVISED JANUARY 1993 TMS27C240 J PACKAGEt TOP VIEW Max Access/Mln Cycle Time VCC * 10% 100 ns 120 ns 150 ns 16-Blt Output For Use in Microprocessor-Based Systems Very High Speed SNAPI Pulse Programming Power-Saving CMOS Technology

BH RU

Contextual Info: TMS626802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS162A - FEBRUARY 1994 - REVISED JUNE 199S Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) High Bandwidth - Up to 100-MHz Data

Contextual Info: JTEXAS IN ST R jCASIC/MENORY> Ô96172S TEXAS IN S T R 70 DE J 0^1755 < AS I C / M E M O R Y > a03at,fl7 ?0C 38687 H 1 D T - ^ é - l3 - ^ S TBP34SR16 1 6 ,3 8 4 B IT 4 0 9 6 W ORDS B Y 4 B IT S S H A D O W -R E G IST E R ED P R O G R A M M A B L E READ ONLY M EM ORY

44c256

Abstract: mcl d01 zig bee SMJ44C256 SMJ44C256-10 SMJ44C256-12 SMJ44C256-15 SMJ44C256-80 mq2 gas ntc 20D9
Contextual Info: b2E D • TEXAS ÔTbl725 INSTR □□Ö1G3Ö ASM SMJ44C256 2 6 2 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY A S I C / M E N O R Y ^ * - 55°C to 125°C Operating Free-Afr Temperature Range x * Low Power Dissipation * Texas Instruments EPIC CMOS Process

TMS416160

Abstract: TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P L6VE
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160A- MAY 1995 - REVISED JUNEJ995 '4xx160/P-60 '4xx160/P-70 ’4xx160/P-80 TIME tCAC MAX 15 ns 18 ns 20 ns ACCESS READ OR

77261

Abstract: LQ 425 B8 SMJ55166 SMJ55166-80 nf t47 - 221 Video RAM texas instruments 77261 smj55166-70 tsc810 ta 8268 ah
Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1995 - REVISED JUNE 1995 HKCPACKAGE TO P VIEW • Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256W ords x 16 Bits • Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and

C2377-C

Abstract: TMS27C128 40922 27C128
Contextual Info: TE XAS INSTR TEXAS -CA S I C / H E n 0 R Y > 77 TNSTR TASTcT m em a^l=il72S 77C ÖRYT D Ü MC H l ? 4Ü917 D T M S2 7 C 1 2 8 131,072-BIT E R A S A B L E P R O G R A M M A B L E READ ONLY M E M O R Y OC TO BER 1984 - R E V ISE D N O V E M B E R 1985 Organization , . . 16K x 8

l5442

Contextual Info: TMS29LF008T, TMS29LF008B 1048576-BYTE BY 8-BIT FLASH MEMORIES I * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • Organization: 1 024K Bytes x 8 Bits • Array Blocking Architecture - One 16K-Byte Protected-Boot Sector Two 8K-Byte Parameter-Sectors

TMS4C1024DJ

Abstract: TMS4C1024 TM024EAD9 8192K
Contextual Info: TM024EAD9 1,048,576 BY 9-BIT DYNAMIC RAM MODULE TM024GAD8 1,048,576 BY 8-BIT DYNAMIC RAM MODULE 0=1^1725 0 G 7 7 1 G 4 T - ^-23-/7 b JULY 1967—REVISED MAY 1988 Modules TM024EAD9 . . . AD SMGLE-M-UNE PACKAGE TOP VIEW TM024EAD9 . . . 1,048,676 x 9 Organization

TGC100

Abstract: TGC103
Contextual Info: 0 ^1723 7 ~ 4 Z -!/-O Y TGC100 SERIES 1-/tm CMOS GATE ARRAYS It u s ^32 DD7ÔD31 D 3 0 1 5 , OCTOBER 1 9 8 7 -R E V IS E D OCTOBER 1 98 8 Six Arrays with Up to 16,758 Useable Gates AC PERFORMANCE TEST STRUCTURE CELL COLUMN W |R|NQ CHANNEL Fast Prototype Turn-Around Time

Texas Instruments TTL 1985

Contextual Info: TEXAS I N S T R -CASIC/MEMORY! 77 8 9 0 1 7 2 5 TEXAS INSTR ASIC/MEMORY ADVANCE INFORMATION D D j üThJjVdh □□4Q7T4 77C 4 0794 D TM4256EQ5, TM4257EQ5 262,144 BY 5-BIT DYNAMIC RAM MODULES OCTOBER 1 98 5 — REVISED NOVEMBER 1986 • 2 6 2 ,1 4 4 X 5 Organization

Contextual Info: TMS370Cx4x 8-BIT MICROCONTROLLERS SP S N O I6- N O V E M B E R 1992 J, N AND N2 PACKAGESt TOP VIEW CMOS/EEPROM/EPROM Technologies on a Single Device - Mask ROM Devices for High Volume Production - One-Time Programmable (OTP) Devices for Low Volume Production

S566A

Abstract: tms45169 TMS45169DZ
Contextual Info: TMS45169, TMS45169P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES _ S M H S566A -JU LY 1 9 9 6 - REVISED JANUARY 1997 DZ PACKAGE TOP VIEW Organization . . . 262144 x 16 5-V Supply (±10% Tolerance) Performance Ranges: '45169/P-50

ti57

Abstract: 4C1070B 4C1070
Contextual Info: bEE D • flc1bl725 □ GflGt15G bT2 TIIS TMS4C1070B 262 264-WORD BY 4-BIT FIELD MEMORY TEXAS INSTR ASIC/MEMORY S M G S Û 70 A -N O V E M B E R 1 99 0-R E V IS E D DECEM BER 1992 N PACKAGEt Organization . . . 262 264 x 4 Single 5-V Power Supply (±10% Tolerance)

AE3G

Abstract: NOR Flash 1996 sector protect
Contextual Info: TMS29LF800T, TMS29LF800B 1048576-BYTE BY 8-BIT/524288-WORD BY 16-BIT 8M-BIT FLASH MEMORIES S M J S 8 2 8 A - S E P T E M B E R 1996 - R E V IS E D MAY 1997 Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Erase Suspend/Resume - Supports Reading Data From, or

27C020-12

Abstract: TMS27C020 TMS27PC020 tms72 a6628
Contextual Info: TMS27C020 2 097152 BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC020 2 097152 BIT PROGRAMMABLE READ-ONLY MEMORY Industry Standard 32-Pln Dual-ln-Une Package and 32-Lead Plastic Leaded Chip Carrier All Inputs/Outputs Fully TTL Compatible ±10% Vcc Tolerance