FL1BL72S Search Results

tms4256

Abstract: TMS4266
Contextual Info: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)

AX2022

Abstract: TACT2150 D6142
Contextual Info: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline

ltl17

Contextual Info: flTblTSS 0 0 7 7 0 0 2 0 TM4256FC1 1,048,576 BY 1B IT DYNAMIC RAM MODULE INS TR A SIC /MEMORY OCTOBER'19 9 5 —REVISED FEBRUARY 1988 BSE D 1 ,0 4 8 ,5 7 6 x 1 Organization TM 4266FC 1 . . C SINGLE-IN-LINE PACKAGE (TOP VIEW) Single 5-V Supply (10 % Tolerance)

27c eeprom

Abstract: 27C291 74TTL
Contextual Info: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs

Contextual Info: TEXAS INSTR -CASIC/MEMORY} Ì7 Ô Ë | flìtlTES D074Ô31 □ 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1988 262,144 x 4 Organization JD PACKAGE TOP VIEW Performance Ranges: AC C ESS AC C ESS AC C ESS TIM E TIM E TIM E • e 4 5 ns *a(CA)

TMS4256FML

Abstract: k2000c
Contextual Info: I ôTblTSS 0D?7Gaa 1 • ASIC/ ME MOR Y x.' 8 Organization UtHizes Eight 256K Dynamic RAMs In Plastic Chip Carrier Long Refresh Period . . . 4 ms (266 Cycles) All Inputs, Outputs, Clocks Fully TTL Compatible 3-State Outputs Performance of Unmounted RAMs

TMS27PC512NL

Abstract: TMS27PC512DD TMS27PC512 27C512JL TMS27C512 TA 7176 IC
Contextual Info: TMS27C512 524288-BIT UV ERSABLE PROGRAMMABLE TMS27PC512 524288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS512F - NOVEMBER 19 85-R E V IS E D JUNE 1995 • • • • • • • • A15[ 1 A12[ 2 A7[ 3 A6[ 4 21 ] A 10 20 ] E 19 j DQ7 D Q 0 [ 11 D Q 1 [ 12 18 j DQ6

10MILLISECOND

Abstract: A1176 TMS2732A
Contextual Info: TMS2732A 32,768-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY A U G U ST 1 9 8 3 —R EV ISED FEB R U A R Y 198 8 Organization . . . 4096 x 8 J PACKAGE TOP VIEW Single 5-V Power Supply • All Inputs/Outputs Fully TTL Compatible • Max Access/Min TM S2732A-17

TMS4500

Abstract: TMS4500A
Contextual Info: TM S4500A DYNAMIC RAM CONTROLLER D 2 6 7 4 , JA N U A R Y 1 9 8 2 TMS4500A . . . N PACKAGE Controls Operation of 8K, 16K. 3 2 K , and 6 4 K Dynam ic RAMs TOP VIEW One Package Contains Address M ultiplexer, Refresh Control, and Timing Control Operates from Microprocessor Clock

tms4256fml

Contextual Info: TEXAS SU 172S INSTR 0D7707ti S • 262,144 ASIC/MEMORY 5SE TM4256EC4 BY 4-BIT DYNAM IC RAM M ODULE (TOP VIEW) Single 5-V Supply (10% Tolerance) A8 22-Pin Single-In-line Package (SIP) D1 Q1 CAS A7 A5 A4 Long Refresh Period . . . 4 ms (256 Cycles) All Inputs, Outputs, Clocks Fully TTL

RY25

Abstract: 27C010-25 TMS27C010
Contextual Info: • 0^1725 0Q77531 2 ■ TMS27C010 1,048,576-BIT UV ERASABLE PROGRAMMABLE READ ONLY MEMORY TEXAS INSTR ASIC/MEMORY 2SE > Organization . . . 128K x 8 (TOP VIEW ) v p p C 1 U 32 ] v c c 31 ] P G M A16C 2 30 ] N C A15[ 3 29 ] A 1 4 A12[ 4 28 ] A 1 3 A7Ü 6

TMS4C1024

Abstract: TMS4C1025-80 TMS4C1024-80 TMS4C1024-12 TMS4C1024/5/7S
Contextual Info: TMS4C1024, TMS4C1025, TMS4C1027 1 048 576-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M G S 0 2 4 F — MAY 1986 — R E V IS E D N O V E M B E R 1990 1 048 576 x D[ 1 W[ 2 1 Organization U RAS [ 3 Single 5-V Supply 10% Tolerance Performance Ranges: TMS4C1024-60

Contextual Info: TIBPAL22V10C, TIBPAL22V10AC, TIBPAL22V10AM HIGH-PERFORMANCE IMPACT PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS024 - D2943. OCTOBER 1 9 8 6 - REVISED MARCH 1992 • C SUFFIX. •NT PACKAGE M SUFFIX. . JT PACKAGE TOP VIEW Second-Generation PLD Architecture

Contextual Info: • flU1725 GG774C15 fl ■ 1 SN74BCT2827A, SN74BCT2828A 10-BIT BUSfMOS MEMORY DRIVERS WITH 3-STATE OUTPUTS D 2 9 7 7 , APRIL 1 9 8 7 -R Ê V IS E D APRIL 1 9 8 8 5SE D DW OR NT PACKAGE TOP VIEW BICMOS Design Substantially Reduces Standby Current 25-0 Series Resistors at Outputs

Contextual Info: • 0^1725 007715=1 T ■ T-46-13-25 TMS27C49 65,536-BIT UV. ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC49 65,536-BIT PROGRAMMABLE READ-ONLY MEMORY A SI C/M EMO RY 5SE I> EPROMs/PROMs/EEPROMs TE XAS IN ST R . Te x a s ^ In s t r u m e n t s PO ST OFFICÊ B O X 1443 • HOUSTON, T É X A S 77001

DQ27-DQ34

Abstract: TM497MBK36A TM497MBK36A-60 TM497MBK36A-70 TM497MBK36A-80 TM497MBK36Q dram memory module 1993
Contextual Info: V 0^1725 TEX AS I N S T R mi I I S 0 0 Û G 4 7 CI 0 0 3 ASIC/flEMORY bEE TM497MBK36A, TM497MBK36Q 4194 304 BY 36-BIT DYNAMIC RAM MODULE D S M M S 446A -D E C E M B E R 199 2-R E V IS E D JANUARY 1993 x 36 Performance Ranges: ACCESS ACCESS ACCESS Single 5-V Power Supply (±10% Tolerance)

TM124MBK36B

Abstract: TM124MBK36R TM248NBK36B TM248NBK36R
Contextual Info: S M M S 1 3 7 D -J A N U A R Y 1 9 9 1 - R E V IS E D J A N U A R Y 1 9 9 3 * * * ACCESS ACCESS READ TIME TIME OR •RAC *AA tC AC WRITE MAX (MAX) (MAX) (MIN) ‘124MBK36B-60 60 ns 30 ns 15 ns 110 ns •124MBK36B-70 ’124MBK36B-80 70 ns 80 ns 35 ns 40 ns

77261

Abstract: LQ 425 B8 SMJ55166 SMJ55166-80 nf t47 - 221 Video RAM texas instruments 77261 smj55166-70 tsc810 ta 8268 ah
Contextual Info: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057A - APRIL 1995 - REVISED JUNE 1995 HKCPACKAGE TO P VIEW • Organization: - DRAM: 262144 Words x 16 Bits - SAM: 256W ords x 16 Bits • Dual-Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and

sn74als6301

Abstract: sn74als6302
Contextual Info: SN74ALS6301, SN74ALS6302 DYNAMIC MEMORY CONTROLLERS D 2 9 0 0 , JA N U A R Y 1 9 8 6 -R E V IS E D M ARCH 1 98B Provides C ontrol for 1 6 K , 6 4 K . 2 5 6 K , and 1 M D yn am ic R A M s SN74ALS6301. S N 74A L S 63 02. . H igh est-O rder T w o -A d d re ss Bits S elect One

4164A

Abstract: 3A5 tube
Contextual Info: r TEXA S INSTR { A S I C / M E M O R Y } 17- D Ë J flTbl7ES 0 D 7 4 Ö 3 S A T - V 6 - Z 3 ~IS SMJ4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1 9 8 8 1,048,576 x 1 Organization JD PACKAGE TOP VIEW Single 5-V Supply (1 0 % Tolerance) DC Performance Ranges:

k2000c

Abstract: 048576-BIT 4164 64k dram
Contextual Info: a à fi172S TEXAS IN ST R < A SIC /M E M O R Y TEXAS INSTR -CASIC/f1EH0RY> . 970 74833 D T - * / 6 ~2 3 ~ 5 D E | 0 ^ 1 7 5 5 0D74fl33 4 | S M J 4 C 1 0 2 4 1,048.576-BIT DYNAMIC RANDOM-ACCESS MEMORY FEBRUARY 1 9 8 8 1,048,576 x 1 Organization JD PACKAGE

tms4c1024

Abstract: TMS4C1024DJ
Contextual Info: fl1b].72S 007710G ^ • TM024HAC4 1,048,576 BY 4-BIT DYNAM IC RAM M ODULE — TEXAS INSTR • 1,048,576 x 4 Organization • Single 6-V Supply 10% Tolerance • 24-Pin Slngle-ln-llne Package (SIP) • Utilizes Four 1 Megabit Dynamic RAMs in Plastic Small-Outiine J-Lead (SOJ) Packages

27C32

Abstract: tms27c32 pc3212 27c32-10
Contextual Info: • ÔTblVHS QQ77133 2 ■ TMS27C32 32,768BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC32 32,768-BIT PROGRAMMABLE READ ONLY MEMORY 2SE D . J & N PACKAGE TOP VIEW A7 Organization . . . 4K x 8 A6 C 1 '-'2 4 : 23 : Í 2 22 : Í 3 21 : c 4 A5 Single 6-V Power Supply

Contextual Info: 0 ^ 1 7 2 5 0077b3S 4 SMJ44C256 262,144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY INSTR ASIC/MEMORY 262,144 x 4 Organization ACCESS ACCESS ACCESS TIME T1MC TIME READ 01) ♦a(R) *a(C) ta(CA) WRITE <*RAC> {MAX) ttC A d (MAX) «CAAl (MAX) CYCLE SMJ44C256-12