FLM0910 Search Results
FLM0910 Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FLM0910-12F |
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MOSFET, X-Band Internally Matched FET | Original | 176.87KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-15F | Eudyna Devices | X-Band Internally Matched FET | Original | 108.91KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-2 | Unknown | High Frequency Device Data Book (Japanese) | Scan | 47.68KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-2 | Unknown | FET Data Book | Scan | 100.69KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-25F | Eudyna Devices | X-Band Internally Matched FET | Original | 178KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-25F |
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X, Ku-Band Internally Matched FET | Original | 181.4KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-25F-E1 |
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Original | 181.39KB | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-3F | Eudyna Devices | X, Ku-Band Internally Matched FET | Original | 313.41KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-3F |
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FET, P Channel, ID 2.1 A | Original | 98.97KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-4C | Unknown | High Frequency Device Data Book (Japanese) | Scan | 51.17KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-4C | Unknown | FET Data Book | Scan | 100.7KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-4F | Eudyna Devices | X, Ku-Band Internally Matched FET | Original | 313.11KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-4F |
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FET, P Channel, ID 2.6 A | Original | 98.88KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-4F-E1 |
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FET: P Channel: ID 2.6 A | Original | 98.88KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FLM0910-8C | Unknown | High Frequency Device Data Book (Japanese) | Scan | 51.17KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-8C | Unknown | FET Data Book | Scan | 100.7KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-8F | Eudyna Devices | X, Ku-Band Internally Matched FET | Original | 260.9KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-8F |
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FET, P Channel, ID 5.2 A | Original | 93.75KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM0910-8F-E1 |
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FET: P Channel: ID 5.2 A | Original | 262.04KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FLM0910 Price and Stock
SUMITOMO ELECTRIC Device Innovations Inc FLM0910-8F/601RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET (Also Known As: FLM0910-8F) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FLM0910-8F/601 | 2 |
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Buy Now | |||||||
FLM0910 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FLM0910-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 39.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω |
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FLM0910-8F -46dBc FLM0910-8F | |
FLM0910Contextual Info: FLM0910-15F X-Band Internally Matched FET FEATURES •High Output Power: P1dB=42.0dBm Typ. •High Gain: G1dB=7.5dB(Typ.) •High PAE: ηadd=32%(Typ.) •Broad Band: 9.5 to10.5GHz •Impedance Matched Zin/Zout = 50ohm •Hermetically Sealed Package DESCRIPTION |
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FLM0910-15F 50ohm FLM0910-15F 50ohm 25deg FLM0910 | |
FLM0910-8CContextual Info: FLM0910-8C Internally Mate lied Power GaAs F E T s ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 42.8 w -65 to +175 °c 175 °c Total Power Dissipation |
OCR Scan |
FLM0910-8C 30dBm 28dBm 25dBm FLM0910-8C | |
FLM0910-4FContextual Info: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 36.0dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: r!add = 29% (Typ.) • Low IM 3 = -46dBc@Po = 25.5dBm • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM0910-4F -46dBc FLM0910-4F FCSI0499M200 | |
FLM0910-25F
Abstract: 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz
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FLM0910-25F 44dBm FLM0910-25F 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz | |
FLM0910-3F
Abstract: 46dBc
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FLM0910-3F -46dBc FLM0910-3F 46dBc | |
FLM0910-4FContextual Info: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω |
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FLM0910-4F -46dBc FLM0910-4F | |
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Contextual Info: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω |
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FLM0910-4F -46dBc FLM0910-4F | |
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Contextual Info: FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω |
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FLM0910-3F -46dBc FLM0910-3F | |
FLM0910-8C
Abstract: i80m
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OCR Scan |
FLM0910-8C FLM0910-8C i80m | |
9.5-10.5GHzContextual Info: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION |
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FLM0910-25F 44dBm FLM0910-25F FCSI0202M200 9.5-10.5GHz | |
FLM0910-4CContextual Info: FLM0910-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 36dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed |
OCR Scan |
FLM0910-4C 36dBm 0910-4C FLM0910-4C | |
FLM09I0-2Contextual Info: FLM0910-2 FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed |
OCR Scan |
FLM0910-2 FLM09I0-2 FLM09I0-2 | |
95GHzContextual Info: FLM0910-12F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=25%(Typ.) ・Broad Band: 9.5~10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION |
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FLM0910-12F FLM0910-12F 95GHz | |
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FLM0910-3FContextual Info: FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω |
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FLM0910-3F -46dBc FLM0910-3F FCSI0499M200 | |
FLM0910-4C
Abstract: FLM0910
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OCR Scan |
FLM0910-4C 36dBm FLM0910-4C 1100mA FLM0910 | |
FLM0910-8F
Abstract: 2657 FET
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FLM0910-8F -46dBc FLM0910-8F FCSI0499M200 2657 FET | |
ED-4701
Abstract: FLM0910-12F
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FLM0910-12F FLM0910-12F ED-4701 | |
ED-4701
Abstract: FLM0910-25F
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FLM0910-25F 44dBm FLM0910-25F ED-4701 | |
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Contextual Info: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω |
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FLM0910-4F -46dBc FLM0910-4F | |
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Contextual Info: FLM0910-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50W |
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FLM0910-3F -46dBc FLM0910-3F 15afety, FCSI0499M200 | |
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Contextual Info: FLM0910-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed |
OCR Scan |
FLM0910-8C FLM0910-8C | |
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Contextual Info: INTERNALLY MATCHED POWER GaAs FETs X,Ku-BAND Electrical Characteristics (Ta = 25°C) PidB TYP. (dB) GtdB TYP. (dB) T)add TYP. (dB) f VDS id s (GHz) FLM8596-4C 36.0 7.5 30 FLM8596-8C 38.5 6.5 FLM0910-2 33.5 FLM0910-4C Part Number Rth (V) (mA) TYP. (°C/W) |
OCR Scan |
FLM8596-4C FLM8596-8C FLM0910-2 FLM0910-4C FLM0910-8C FLM1011-2 FLM1011-4C FLM1011-8C FLM1213-4C FLM1213-8C | |
FLM0910-4FContextual Info: FLM0910-4F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Ω |
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FLM0910-4F -46dBc FLM0910-4F FCSI0499M200 | |