FLH 355 Search Results

bu4584bf-x

Contextual Info: BU4584B/BU4584BF BU4584B BU4584BF 7 I1 h u # Hex Schmitt Trigger # J K \ f ii0 /D im e n s io n s Unit : mm BU4584B, BU4584BF t i , -f > A - 2 V a. 5 " j h M J t flH i& T 't o 1f - 7 6 0 » t r t * L T t' * * t o jt± U , if ’ib É LT 'K D M ^X tl^tttZ m m M

Contextual Info: SIEMENS BUZ 355 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 355 Vbs 800 V Id ^DS on Package Ordering Code 6A 1.5 w TO-218AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Id

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

rC-35B

Contextual Info: rEHEPATOPHbm TPMOfl re-355 TRIODE reHepaTopHbiü Tpnofl TC-35B npeflHa3HaneH fl/isi paôOTbi b pe>KMMe HenpepbiBHOü re H e p a n n M b a B T o r e H e p a T o p a x c B H e w H e ii OÔpaTHOÎi CBfl3 blO M B yCMJIMTeJIHX Ha >HaCTOTax ,qo 1 000 M rlj b cxeMax c oômeiï tohkom Ha

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

MA 7815 tesla

Abstract: MAA501 MAA 436 TESLA MCA660 MAS560A MCA640 MA3005 MAA725 tesla maa 436 MA 7805 tesla
Contextual Info: l i 8 S W C L j D I W L M E L E K T R O N IC K É M K O N C E R N Ä H a n o r o B b i e S O U C Ä S T K Y R O Z N O V i/iHTerpa/ibHbie M M K pO C X eM bl A H a n o r o B b ie M H T e r p a n b H b ie M M KpO C XeM bl 1 L jM c fc p o B b ie M H T e r p a n b H b ie

uc3807

Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Hall Siemens hkz 101

Abstract: HKZ101 Siemens hkz TCA205A Q67000-A9002-A401 Hall-Effect-Sensors HKZ101 TCA355G siemens proximity sensor ic TCA 792 TcA305A
Contextual Info: Hall-Effect Vane Switch HKZ 101 Features Bipolar 1C • • • • • • • • Contactless switch with open collector output 40 mA Static switching High switching frequency Herm etically sealed with plastic Unaffected by dirt, light, vibration Large temperature and voltage range

Contextual Info: SN54HC253, SN74HC253 DUAL 4-LINE TO 1-LINE DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS _ SCLS133A-DECEMBER 1982 - REVISED JANUARY 1996 3-State Version of 'HC153 High-Current Inverting Outputs Drive up to 15 LSTTL Loads

Signetics 565

Abstract: ht 6292 10179F 10179N
Contextual Info: Signetics 10179 Look-Ahead Carry Block Look-Ahead Carry Block Product Specification ECL Products DESCRIPTION The 10179 is a Look-Ahead Carry Block. It can be used in conjunction with the 10181 4-bit arithmetic/logic unit to per­ form a high order look-ahead carry, in

30f 124 equivalent

Contextual Info: SMBG AND SMBJ5.0 THRU 170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5.0 to 170 Volts Peak Pulso Power - 600 Watts PO-214AA FEATURES MODIFIED J'BEND ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0

pml 017

Abstract: cq 724 g diode 74HC697 74hc696 54HC 74HC HC697 ic pml 018
Contextual Info: SGS-THOMSON M 54/74H C 696 M 54/74H C 697 HC696 U/D DECADE COUNTER/REGISTER 3-STATE HC697 U/D 4-BIT BINARY COUNTER/REGISTER (3-STATE) HIGH SPEED fMAX= 33M H z (TYP.) at V Cc = 5V LOW POWER DISSIPATION lcc = 4 /tA (MAX.) at TA = 25 °C HIGH NOISE IM M U NITY

Contextual Info: First Edition LCD M odule Technical Specification Nov. 05, 2 0 1 0 Final Revision JMSBftfT A p r. 10, 2 0 1 2 T-55596G D035J U -LW -AAN STANDARD / Customer —K Custom er's Product No KYOCERA Display Corporation Approved: Checked: Prepared: Toshiyuki Okamoto

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

IM29C128

Abstract: IM29C510
Contextual Info: Intersil High-Reliablllty Products ISP9128 High Reliability Finite Impulse Response Filter Controller GENERAL DESCRIPTION FEATURES The 16-bit FIR Filter Controller FFC provides all the data history, storage and programmable filter cycle control logic re­

Contextual Info: ADVANCED MICRO DEVICES b4 dË| 0ES7S25 001?blH 7 | T . .,-^ 64C 17614 Am29841 - 46 Ì'Ò2 57525 A D V ANC ED. MI CR 0.D E VIC E.S 0 T S B - Q J .J Am29841 - 4 6 High Performance Bus Interface Latches DISTINCTIVE CHARACTERISTICS

A147-VPK

Abstract: A147-22 A147-11 A147-SK A147SK
Contextual Info: A147-22 2 METER YAGI ANTENNA ARRAY 145.5-148 MHz 951423 9/911 W ARNING T H IS AN TEN N A IS AN E LEC T R IC A L C O N D U C T O R CO NTACT W ITH P O W ER U N E S CAN R E SU LT IN OEATH. O R S E R O U S INJURY. D O NOT IN STA LL T H IS AN TEN N A W H ERE TH ERE IS A N Y P O SSIB ILIT Y O F CO NTACT W ITH O R HIGH VO LTAG E A R C -O V ER FRO M

HY5116400A

Contextual Info: HY5 1 1 6 4 0 0 A S e r ie s •{H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

28003* intel

Abstract: 51C256L 51C256L-15 51C256L-20 2800-310
Contextual Info: in te i 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 Low Power Data Retention • TTL and HCT Compatible — Standb y current, C HM O S — 100 /¿A (m ax.) — R efresh period, R AS-O nly — 32 m s (m ax)

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

Contextual Info: H Y 5 1 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM H Y U N D A I DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit The HY5116400A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide operating

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A

Contextual Info: OPA622 B U R R -B R O W N | M | Wide-Bandwidth OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LARGE SIGNAL BANDWIDTH: 150MHz (AP , 200MHz (AU) • BROADCAST/HDTV EQUIPMENT • HIGH OUTPUT CURRENT: ±70mA • COMMUNICATIONS • PULSE/RF AMPLIFIERS • SLEW RATE: 1500V/|as (AP), 1700V/(is (AU)