FLASH CHIP 512MB Search Results

Contextual Info: HANBit HFDOM40S3Rxxx 40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

Contextual Info: HANBit HFDOM44S6Vxxx 44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

2Gbyte NAND flash

Contextual Info: HANBit HFDOM40S6Vxxx 40Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The

THNCF128MMA

Abstract: THNCF512MMA cf 44 pin to ide 1.8 THNCF064MMA THNCF256MMA THNCF768MMA 44 pin ide to 40 pin ide
Contextual Info: THNCFxxxxMA Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxxMA series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type 䋨Toshiba䋩 flash memory device. The

THNCF

Abstract: sandisk nAND flash 64Mb 388
Contextual Info: THNCFxxxMBA/BAI Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxMBA/BAI series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type 䋨Toshiba䋩 flash memory device.

THNCF256MCA

Abstract: THNCF512MCA
Contextual Info: THNCFxxxxCA Series TENTATIVE TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxxCA series CompactFlash™ card is a flash technology based on ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type flash memory device. The CompactFlash™ card

THNCF

Abstract: THNCF512MQG THNCF1g02qg thncf2g04qg THNCF256MQG SANDISK 16bit d-0811 THNCF2G04 SanDisk compactflash 256Mb
Contextual Info: THNCFxxxxQG Series TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card Lead-Free DESCRIPTION The THNCFxxxxQG series CompactFlash™ card is a flash technology based on ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type flash memory device. The CompactFlash™ card

THNCF1G02DG

Abstract: thncf128mdg 400H THNCF256md SanDisk compactflash 256Mb THNCF256MDG 102GB THNCF512MDG
Contextual Info: THNCFxxxxDG Series TENTATIVE TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card Lead-Free DESCRIPTION The THNCFxxxxDG series CompactFlash™ card is a flash technology based on ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type flash memory device. The CompactFlash™ card

THNCF512MPG

Abstract: SanDisk compactflash 256Mb THNCF THNCF256MPG SANDISK 16bit THNCF4G09PG
Contextual Info: THNCFxxxxPG Series TENTATIVE TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card Lead-Free DESCRIPTION The THNCFxxxxPG series CompactFlash™ card is a flash technology based on ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type flash memory device. The CompactFlash™ card

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

TFBGA105

Abstract: M39P0R9070E0 M58PR512J M65KA128AL
Contextual Info: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low

SAMSUNG MCP

Abstract: MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec
Contextual Info: Preliminary MCP MEMORY KAA00B606A Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/64M Bit(4Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. July 18, 2002

MCP 67 MV- A2

Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
Contextual Info: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1

SAMSUNG MCP

Abstract: 7a7l MCP MEMORY K5D1G58KCM-D090 nand sdram mcp
Contextual Info: Preliminary MCP MEMORY K5D1G58KCM-D090 Document Title Multi-Chip Package MEMORY 1G Bit 128Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date 0.0 Initial issue. - 1Gb NAND A-Die_ Ver 0.3 - 256Mb Mobile SDRAM F-Die_Ver 1.1

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

SAMSUNG MCP

Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6

FD19

Abstract: FD31 FD23 WEDPNF8M722V-XBX
Contextual Info: WEDPNF8M722V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* • 3.3 Volt for Read and Write Operations FEATURES ■ 1,000,000 Erase/Program Cycles ■ Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm

FD31

Abstract: WEDPNF8M721V-XBX
Contextual Info: WEDPNF8M721V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package ADVANCED* • 3.3 Volt for Read and Write Operations FEATURES ■ 1,000,000 Erase/Program Cycles ■ Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm

Contextual Info: WEDPNF8M722V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* • 3.3 Volt for Read and Write Operations FEATURES ■ 1,000,000 Erase/Program Cycles ■ Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm

Contextual Info: White Electronic Designs W78M64V-XSBX ADVANCED 8Mx64 Flash 3.3V Page Mode Simultaneous Read/Write Operations Multi-Chip Package FEATURES Access Times of 90, 100, 120ns Unlock Bypass Program command Packaging • 159 PBGA, 13x22mm – 1.27mm pitch • Reduces overall programming time when issuing

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

SAMSUNG MCP

Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
Contextual Info: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Flash MCp nand DRAM 107-ball

Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
Contextual Info: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Contextual Info: White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm