FL23STOS Search Results

t559

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

bt 33 f

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

Contextual Info: • fl23Sb05 OO^ÔÔSÔ TS^ SIEMENS 1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus SLx 24C01/02 Preliminary Features • Data EEPROM internally organized as 128/256 bytes and 16/32 pages x 8 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation

Contextual Info: SIEMENS PEB 20550 PEF 20550 Overview 1 Overview The PEB 20550 Extended Line Card Controller is a highly integrated controller circuit optimized for line card and key system applications. It combines all functional blocks necessary to manage up to 32 digital (ISDN or proprietary) or 64 analog subscribers.

gilbert cell mixer

Abstract: Intermediate frequency transformer siemens Package Outlines gilbert mixer rf mixer 2331 Intermediate frequency Semiconductor RF VHF Transceiver IC siemens Package Outlines Plastic Package 18 ML 2A configuration siemens Resistors
Contextual Info: S IE M E N S Mixer PMB 2331 P relim inary S p e zifica tio n B ipolar IC Functional Description, Benefits: • • • • • • • • • • • • N ew B 6H F b ip o la r technology, 2 5 G H z ft R educed external co m p on e n ts F requency range up to 2.0 G H z

726L1

Contextual Info: • fi23SbOS □□61715 >443 ■ SIEMENS PROFET BTS726L1 Smart Two Channel Highside Power Switch Product Summary Features • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection including load dump

TSOP 50 Package

Abstract: 3165160AT A42F TOSHIBA D 799 Q67100-Q1552 3166160AT
Contextual Info: SIEM ENS 4M X 16-Bit Dynamic RAM 8k, 4k & 2k-Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Preliminary Information • 4 194 304 words by 16-bit organization • 0 to 70 "C operating temperature • Fast Page Mode operation

BUZ37

Abstract: C67078-A1603-A2
Contextual Info: ÔÔD ÔSBSbOS Q 0 m S 7 Q 4 « S I E S D 880 14570 D T' 3 V - / 3 BUZ 37 SIEMENS AKTIEN6ESELLSCHAF N-Channel Main ratings Draln-source voltage Continuous drain current Draln-source on-resistance Description Case K>s h ^DS on = 200 V = 13 A a 0,2 n SIPMOS, N-channel, enhancement mode

Contextual Info: SIEMENS C G Y 50 GaAs MMIC Datasheet * Single-stage monolithic microwave 1C MMICam plifier * Cascadable 50 £i gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz