FL235BD5 Search Results

WY smd transistor

Contextual Info: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection

Contextual Info: bOE D m fl235bD5 DQMS'm 18T «SIEG T = ^ ^ 7 C IC U C M C SIEMENS AKTIENGESELLSCHAF SIEMENS DL3416 .225" Red, 4-Character 16 Segment Plus Decimal Alphanumeric Intelligent Display With Memory/Decoder/Driver Preliminary Data Sheet Package Dimensions in Inches mm

SMD L02

Abstract: smd diode l03 PSB4506
Contextual Info: bSE D • fl235bD5 GGS2G21 5 b 3 ■ S I E 6 SIEM EN S SIEMENS AKTIENGESELLSCHAF Simple Hands-Free Add-On Circuit SHAC PSB 44030-P PSB 44030-T Preliminary Data Bipolar 1C Features • • • • • • • • Low voltage operation (min. 2.7 V) for line powered

83C517A

Abstract: PI7Z sab80c517
Contextual Info: LOE D • fl235bD5 G0M7CIÔ4 533 SIEMENS SIEG SIEMENS AKTIENGESELLSCH 7 High-Performance 8-Bit CMOS Single-Chip Microcontroller -^ ? -/? -¿ > 7 SAB 80C517A / 83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM

tle 4258

Contextual Info: bOE d • fla 3 S b Q S a a s a io a SIEMENS i s t ■ s ie g SIErtENS AKTIENGESELLSCH 7 ^ 5 2 - li-1 ^ 5-V Low-Drop Voltage Regulator TLE 4258 Preliminary Data Bipolar 1C Features • • • • • • • • • Low-drop voltage Low quiescent current

Contextual Info: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5

Contextual Info: SIEMENS 4M X 4-Bit D yn am ic RAM H YB 5116400J-50/-60/-70/-80 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 v e rs io n )

Contextual Info: bOE D a2 3 5 bQ S 0 0 4 5 b 3 3 544 « S I E G SIEMENS SIE M EN S AKTIENfiESELLSCHAF PROFET BTS 542 D /E /F Preliminary Data • • • • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection Overload protection

Contextual Info: SIEMENS TUA 6110XS preliminary IC-SPECIFICATION Contents SAT Mixer-Oscillator-PLL for 3.3GHz paf>e Contents 1 Functional Description, Application Pin Defintion and Function Block Diagram 5 Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings

Contextual Info: SIEMENS Digital Deflection Controller SDA 9064-5 Preliminary Data NMOS IC Features • Pipeline processor structure controls deflection stages • Raster alignment by keyboard or automatically • Adaptable beam current compensation for picture height and width

82C206

Contextual Info: 47E D SIEMENS • flaasbos 0031S7D 1 « S I E G SIEMENS AKTIE NGE SELLSCHAF -rs a -3 S -5 5 SAB 82C211 CPU/Bus Controller of Siemens PC-AT Chipset Advance Information 117 3.90 47E » ■ Ö 535b05 0031571 SIEMENS AKTIENGESELLSCHAF -•

smd marking YB

Abstract: Q67100-Q1557 405AJ 3164405AT-60 SMD MARKING CODE 09t P-SOJ-32-1 TSOP-32 ACS42
Contextual Info: SIEM ENS 16M 4-Bit Dynam ic RAM u X 4k & 8k-Refresh, EDO-version HYB 3164405AJ/AT(L) -40/-50/-60 «Y B 3165405AJ/AT(L) -40/-50/-60 X P r e lim in a r y In fo rm a tio n • • • • 16 777 216 words by 4-bit organization 0 to 70 ”C operating tem perature

ic bsp 350

Abstract: 235L Q67000-S227
Contextual Info: û235t>DS DOfllbE? 2Ô4 S IE M E N S BSP 350 MiniSmart • High-side switch • • • • • • • • Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1 Switching inductive load

Contextual Info: SIEMENS 8M X 32-Bit Dynamic RAM Module HYM 328020S/GS-50/-60 Preliminary Information • 8 388 608 words by 32-bit organization alternative 16 777 216 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time

neosid v6

Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Contextual Info: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page

Q67127-C2061

Abstract: safc505 F701H C505C Q67127-C2057 VR212
Contextual Info: SIEMENS Microcomputer Components 8-Bit CMOS Microcontroller C505 Data Sheet 12.97 fl2 3 5 b 0 5 O ld E Ib B 5CH • Edition 12.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1997. All Rights Reserved.

Contextual Info: ôfiD D • 88D fl235bG5 0014^54 0 « S I E Û 14954 D BUZ 231 7 ~ '3 * 7 ~ /3 SIEMENS AKTIENGESELLSCHAF Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance a 1000 V l^ S = 4,9 A k ^OS on) = 2,6 n Go- Description

asda

Contextual Info: t.DE J> m 653StiDS □D4c13fi3 T % « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF T - 4 £ > - 3 -2 8 Nonvolatile Memory 2-Kbit E2PROM with I 2C-Bus SDA 2526-2 Preliminary Data MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology (E2PROM

T60403-L4021

Abstract: function of lts 543 ic OB35 ltp250 T1605 vogt 543 VOGT B1 65495
Contextual Info: PEB 2084 Revision History: Current Version: Data Sheet 07.95 Previous R eleases: Preliminary Technical Manual 2 .9 4 Subjects major changes since last revision P age P age (in previous (in current Version) Version) 11 8 Figure 1, ID O = Output and Input

acy smd

Abstract: C504 C504-2R C504-L SAB-C504 SAF-C504 SAH-C504 SAK-C504 KSS 40Mhz crystal oscillator
Contextual Info: • fl23SbOS 0 0 3 2 3 0 0 2flb ■ SIEMENS 10 10.1 Device Specifications C504 Device Specifications Absolute Maximum Ratings Ambient temperature under bias r A . 0 'C to + 70 "C

Contextual Info: SIEMENS HYB 39S13620TQ-6/-7/-8 Overview • Special Mode Registers High Performance: -6 -7 -7 -8 Units fcK 166 125 125 125 MHz latency 3 2 3 3 - tcKS 6 8 7 8 ns {AC3 5.5 5.5 5.5 6 ns Two color registers Burst Read with Single Write Operation Block Write and Write-per-Bit Capability

Contextual Info: SIEMENS BUP 401 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type BUP 401 VCE 600V >c 29A C Pin 3 E Package Ordering Code TO-220 AB C67078-A4404-A2 Maximum Ratings

Contextual Info: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n

DIODE M4A smd

Contextual Info: • ß235b05 ODTBTVfl EÖM ■ PROFET BTS611L1 SIEMENS Smart Two Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump