FL235BGS Search Results

sfh615

Abstract: Siemens sfh615 optocoupler siemens 611 B235 transistor S56 optocoupler LP 250
Contextual Info: SIEMENS AKTIEN6ESELLSCHÂF 47E D • fl235bGS □□272^0 ë ■ SIEG SIEMENS SFH 610 SFH 611 SFH 615 2.8 kV TRIOS OPTOCOUPLERS HIGH RELIABILITY FEATURES * Isolation Test Voltage: 2800 V * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical >13

TDA 4600-2

Abstract: tda4600 BY360 Q63100-P2462-J29 TDA4601D tda4601 SMPS CIRCUIT DIAGRAM TDA 4600 class d amplifier tda Q63100 P2462-J29
Contextual Info: bGE D SIEMENS fl235bGS OOMTMbl EOb « S I E G SIEMENS AKTIENGESELLSCHAF -pStf-ll-31 Control ICs for Switched-Mode Power Supplies TDA 4601 ; -D Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic

Contextual Info: • fl235bGS O G T Û Ô T Ô 647 SIEM ENS 4 Kbit 512 x 8 bit Serial C M O S E E P R O M s, I 2C S ynch ro n ou s 2-W ire Bus S L x 24C 04 Preliminary Features • Data EEPROM internally organized as 512 bytes and 32 pages x 16 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation

Contextual Info: 47E D SIEMENS • ÔE35bD5 □03101,0 b « S I E G SIEMENS AK TIE NG ESE LLSCHAF ^ 5 3 - 3 3 - ^ Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Preliminary • High-performance 16-bit DMA controller for 16-bit family processors SAB 80286,

322120S-70

Abstract: HYB514400
Contextual Info: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

7 segment display lm3915

Abstract: YBG-4840 OBG-4830 uaa170
Contextual Info: tOE J • JS3SbOS O O M b l m 538 M S I E G SIEMENS RBG-4820 SUPER-RED OBG-4830 y e l l o w YBG-4840 GREEN GBG-4850 RED SIEMENS AKTIEN6ESELLSCHAF 10 Element Linear Display Maximum Ratings FEATURES * 10 Element Display * End Stackable-Package Interlock for

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

siemens 8032 cpu

Abstract: siemens 8032 SIEMENS 80515 80535 80515 88H1 MC 80535 Microcontroller Family SAB 8051 Pocket Guide 80515 application 80515/80535 8 Bit Microcontroller
Contextual Info: SIEM EN S High-Performance 8-Bit Single Chip Microcontroller SAB 80515/80535 P relim in ary SA B 80515 SAB 80535 • • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM Microcontroller for external ROM

siemens sda

Abstract: SDA 30C162
Contextual Info: MEGATEXT and MEGATEXT PLUS ICs SDA 5273 / SDA 5275 SDA 5273-2 / SDA 5275-2 Revision History: 06.97 Previous Releases: 11.96 Page Subjects changes since last revision 20 Now also covers SDA 5275-2 and SDA 5273-2 versions; Reset/chip initialization update

Contextual Info: SIEMENS Symbol MULTILED 2.5 mm x 5 mm, Partly Diffused LU B371 Besondere M erkmale • • • • nicht eingefärbtes, teilw eise diffuses Gehäuse Lötspieße im 2.54 mm Raster hohe Signalwirkung durch Farbwechsel der LED möglich Anzeige unterschiedlicher Betriebszustände durch Farb­

Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: SIEMENS 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 3141OOBJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast Page Mode Operation • Performance: ÍRAC RAS access time

Contextual Info: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be

Contextual Info: BSO 305N I nf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features 30 V • Dual N Channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current

Contextual Info: SIEMENS 8-Bit CMOS Microcontroller SAB-C502 Preliminary • Fully compatible to standard 8051 microcontroller • Versions for 12 / 20 MHz operating frequency • 16 K x 8 ROM SAB-C502-2R only • 256 x 8 RAM • 256 x 8 XRAM (additional on-chip RAM) • Eight datapointers for indirect addressing of program and external data memory

BTS 302

Abstract: siemens LAL 2.25 BTS410G BTS302 ZENER A24 e3040 410H DIODE smd Wj 20/BTS 302
Contextual Info: SIEMENS BTS 41 OG PROFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection1 • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection ’ /

transistor BD 263

Contextual Info: SIEMENS BUZ 50 B SIPMOS Power Transistor • N channel • Enhancement mode Type Vds BUZ 50 B 1000 V 2A flbsion Package Ordering Code 8 Í2 TO-220 AB C67078-A1307-A4 Maximum Ratings Parameter Symbol Drain source voltage Vds Drain-gate voltage ^DGR Rqs = 20 k£2

wn 537 a fet

Contextual Info: • ô c !3 s b 0 s m a ■ PRÜFET BTS410F2 SIEMENS Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

WY smd transistor

Contextual Info: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection

Contextual Info: Ô235h05 DOTfiflTfl b3S SIEMENS 8/16 K bit 1024/2048 x 8 bit Serial C M O S E E P R O M s, I 2C Syn ch ro n o u s 2-W ire Bus SLx 2 4C 08 /1 6 Preliminary Features • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes • Low power CMOS

Contextual Info: SIEMENS Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel PinCtonfigu ation 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter

18P06P

Abstract: Q67040-S4189
Contextual Info: SPD 18P06P SPU 18P06P Preliminary Data SIPMOS Small-Signal-T ransistor Features • P Product Summary Channel • Enhancement mode • Avalanche rated ^DS Drain-Source on-state resistance ^bs on 0.13 -18.6 b Continuous drain current V -60 Drain source voltage

Contextual Info: SIEM ENS SDA 5649 SDA 5649X Expanded Decoder for Program Delivery Control and Video Program System EPDC / VPS Decoder CMOS 1C Features • Single-chip receiver for PDC data, broadcast either - in Broadcast Data Service Packet BDSP 8/30/2 according to CCIR teletext system B, or

m7 smd diodes

Abstract: TCA605G SIEMENS thyristor transistor smd cr smd transistor m7 2.tn SMD siemens EM 235
Contextual Info: 47E D SIEMENS • B235b05 QDB55b3 £ S IS IE6 SIEMENS AKTIEN6 ESE LLSCHAF 7 = ' i 5 ‘' 0 1C for Inductive Two-Wire Proximity Switches with Short-Circuit Protection TCA 605 Bipolar IC Preliminary Data • • • • • • 5 Operates from 1 V supply voltage upwards