FL 210 TRANSISTOR Search Results

KSC3120

Contextual Info: KSC3120 KSC3120 Mixer for UHF TV Tuner • GCE=17dB TYP. • CRE=0.6pF (TYP.) 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter

c1615

Abstract: 2SC1615 ic 6802 2SC4036
Contextual Info: ROHM CO L T D MOE ' T A S A I T ! D Q Q 0 S b 3 fl h H R H M 2SC1615/2SC4036 h 7 > y ^ ^ / T ransistors “ T - 2 7 - Ö 7 H 2S C 1615 f i î È i è y L ^ - ^ N P N E I Î Œ ^ Œ iiÎ if f l/ H ig h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors

2sC1651 transistor

Abstract: 2SC1651
Contextual Info: /T ra n sisto rs S 2 C 1 6 5 2SC1651 U - ^ N P N '> v = l> T riple D iffusied NPN S ilicon Transistor iiiiiJ E ^ J E iS 'f if f l/ H ig h V oltage A m p. 1 • ^J K ^ jiiG -fl/D im e n s io n s U n it: mm 1) MHHHLT$>5 o V c e r= 2 1 0 V 2 i Sl i t t f r ' Sl '

Contextual Info: Jbemi-donducto'i ^Products., Line. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG BLV25 is a 28 V silicon NPN power transistor designed primarily for

2PD601A

Contextual Info: Philips Semiconductors H 711002b 0070015 b4S HPHIN PNP general purpose transistor Objective specification 2PB709; 2PB709A PIN CONFIGURATION FEATURES • High DC current gain • Low collector-emitter saturation voltage. _ DESCRIPTION _ 2 1 C PNP transistor in a plastic SC59

RCA-2N6686

Abstract: 2N6688 2n6888 92CS-30387 2N6686 2N6687
Contextual Info: 3875081 G E SOLID STATE 01 DE 1 3 0 7 5 0 0 1 0017D2fi i| I , T Sw ttetM ajf Power Transistor*_ 5 - - • 2N6686, 2N6687, 2N6688 J _! File N u m b e r ' / „ _ 1171 25-A Sw itchM aX Power Transistors

Contextual Info: i COLLMER SEMICONDUCTOR INC 5SE D • 55367^2 0Q011G4 fl ■ 7 '33-?£ |3 j 1200 volts class IG B T modules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for power converters. • The voltage drive element enables the drive circuit to be miniaturized and used in com m on.

7dw npn

Abstract: 20AWG 20ID ARC0421 M111 SD1429
Contextual Info: HMS'nanr-ts^-inan/i,S Com m erceD rive i i uo in I lt ug u ine er iy yv vi Il il ic n /fl/C f f I I iM om e,. rP A18936-1013 Tel: 215 631-9840 iu j j u iu i j ^ a A A SD1429 P ro g re s s P o w e re d b y T ec h no log y RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C, MOBILE APPLICATIONS

Contextual Info: F k Saturating chokes HI Series The inductance of saturating-type chokes reduces as load current increases, and is ideal for attenuating the differential-mode or symmetrical interference generated by fast-switching thyristors, triacs, transistors and phase angle control devices. Inductance values are

BFR94A

Contextual Info: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.

Contextual Info: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps

Contextual Info: m 2N3740 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS 4.0 lc VcEO -60 V P diss 25 W @ Tc = 25 °C Tj -65 to +200 °C

Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: S G S - T H O M S O N RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ THD277HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE# E817 3 4 (N). APPLICATIONS . HORIZONTAL DEFLECTION FOR COLOUR

power switching with IRFP450 schematic

Abstract: application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS IRFP453FI
Contextual Info: 3DE D DQSTôB? T • [ Z T S G S -T H O M S O N * 7 # ^ [ » » 1 ™ * ^ - s TYPE VDSs 500 500 450 450 500 500 450 450 V V V V V V V V IR F P 4 5 0 / F I - 4 5 1 /F I IR F P 4 5 2 / F I - 4 5 3 /F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

CTC 1061

Abstract: transistor 2SB815 2SB815 2SB817 2SD1047 2SB832 2SB817 2SD1047
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

Contextual Info: m 2N6211 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. MAXIMUM RATINGS V PACKAGE STYLE T O - 66 2.0 A lc 275 V cb IN C H E S A 6 C D E F G H J K L M O m < 225 V 35 W @ Tc = 25 °C

Contextual Info: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

BVC71

Abstract: BCV71R BCV71 BCV72 BCV72R DS42 S0T23 ctc4
Contextual Info: BCV71 BCV72 S0T 23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR PA RT M A RKIN G DETAILS:BVC71 - K7 BCV72 - K8 BCV 71R - K6 BCV 72R - K9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L VALUE U N IT Collector-Base Voltage V CBO 80 V Collector-Em itter Voltage

1838 infrared

Abstract: SN62PB36AG02 Sn63pB37 temp profile 210C C1210C104K5RAC amplifier application notes 4254x microwave amplifier
Contextual Info: Submit by Email Spectrum Microwave Amplifier Application Notes Application Note - LCA - Low Cost Amplifiers Introduction The LCA product line is designed for use in high volume commercial applications. This application note provides mechanical, electrical and mounting details for proper use and installation of the LCA product

D00373

Abstract: GDG3737 A138
Contextual Info: ALLEGRO MICROSYSTEMS INC 13 î • 0SDM33Ô GD03737 fl ■ T-91-01 PROCESS VHB Process VHB PNP High-Voltage Transistor Process V H B is a P N P double-diffused silicon epi­ taxial planar device. It is designed for use in highvoltage amplifier circuits. It is the complement to NPN

Contextual Info: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -FEBRUARY 95_ ZTX1051A _ _ _ FEATURES * Bcev=150V * Very Low Saturation Voltage * High Gain * Inherently Low Noise APPLICATIONS * Em ergency Lighting * Low Noise Audio