FL 210 TRANSISTOR Search Results

Contextual Info: Jbemi-donducto'i ^Products., Line. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG BLV25 is a 28 V silicon NPN power transistor designed primarily for

BFR94A

Contextual Info: tSsmi-Gonau.cko'i iPioaucti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 378-8960 BFR94A NPN 3.5 GHz wideband transistor DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope.

Contextual Info: m 2N3740 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS 4.0 lc VcEO -60 V P diss 25 W @ Tc = 25 °C Tj -65 to +200 °C

Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

Contextual Info: S G S - T H O M S O N RfflDeiE!<s [l[L[ie,n’[KÌ@RDD S$ THD277HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE# E817 3 4 (N). APPLICATIONS . HORIZONTAL DEFLECTION FOR COLOUR

4E7 philips

Abstract: KY 711 VN2406L FL 210 transistor
Contextual Info: • Philips 711002b DDbflOSS T4S ■ PHIN Sem iconductors Data sheet status Product specification date of issue July 1993 FEATURES VN2406L N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION PINNING - TO -92 variant • Very low RDs 0n

power switching with IRFP450 schematic

Abstract: application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS IRFP453FI
Contextual Info: 3DE D DQSTôB? T • [ Z T S G S -T H O M S O N * 7 # ^ [ » » 1 ™ * ^ - s TYPE VDSs 500 500 450 450 500 500 450 450 V V V V V V V V IR F P 4 5 0 / F I - 4 5 1 /F I IR F P 4 5 2 / F I - 4 5 3 /F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

CTC 1061

Abstract: transistor 2SB815 2SB815 2SB817 2SD1047 2SB832 2SB817 2SD1047
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

Contextual Info: m 2N6211 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. MAXIMUM RATINGS V PACKAGE STYLE T O - 66 2.0 A lc 275 V cb IN C H E S A 6 C D E F G H J K L M O m < 225 V 35 W @ Tc = 25 °C

Contextual Info: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

1838 infrared

Abstract: SN62PB36AG02 Sn63pB37 temp profile 210C C1210C104K5RAC amplifier application notes 4254x microwave amplifier
Contextual Info: Submit by Email Spectrum Microwave Amplifier Application Notes Application Note - LCA - Low Cost Amplifiers Introduction The LCA product line is designed for use in high volume commercial applications. This application note provides mechanical, electrical and mounting details for proper use and installation of the LCA product

Contextual Info: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin configuration 1 = BASE 2 » EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C

BCW71

Abstract: BCW72
Contextual Info: CDU BCW71 BCW72 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors Marking PA C K A G E O U TLIN E D ETA ILS A LL D IM E N SIO N S IN m m BCW71 = Kl BCW72 = K2 _3.0 2.8 0.48 0.14 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60

iso 1207

Abstract: TEA-1035 2SK1596 MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 NEC 1 DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK1596 SWITCHING N-CHANNEL POWER MOS FET

2N3055

Abstract: 2N3773 2SB766 2SB767 2SB772 2SB775 2SD867 2N3773 transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2SA1668

Abstract: 2SA1667 22SA1668
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1667 2SA1668 S ilicon PNP Power Transistors D E S C R IP T IO N • With T 0 2 2 0 F package • Complement to type 2SC4381/4382 A P P L IC A T IO N S • For TV vertical output .audio output driver and general purpose applications

Contextual Info: <s/\ £U7 £Pioc/uc£i, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 RF POWER TRANSISTORS 2N4440 Silicon N-P-N Overlay Transistor Fnturm: For Class A, B, or C VHF/UHF • S W output min. at 400 MHz

Contextual Info: ï S P R A G U E / S E MI C O ND 8514019 SPRAG U E. GROUP 13 D • ÖS13ÖSG S E M IC O N D S / IC S 93D GQD3tm 4 ■ 0 3 6 1 4 J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Low-Noise Amplifiers ELECTRICAL CHARACTERISTICS at Tfl = 25°C V gsiohj

MFC 6030

Abstract: IC818 LI-506 C-PFH JE 33 PA503T uPA503T MG025 1F5-E IC-8182
Contextual Info: MOS M O S Field Effect Transistor /¿PA503T P M O S F E T 5 b V 2 H ¿¿PA503T ü , MOS FET ÿ 2 T '< 4 X - ? * > * , K U S S iK w fa - 1 , H g n x ( T O : mm) KW m h W H P J S ÌK ^ if ó L ^ to fl oo + 0.1 U * ,5Z - 0 .0 5 0.16 : m. # o SC-59 ' - t - v ' r - ' J t IrJ

IRFZ44

Abstract: IRFZ44 data IRFZ44 mosfet switching circuit gate drive for mosfet irfz44 IRFZ45 IRFz44 n-channel MOSFET c4488 IRFZ44 mosfet diode c449 diode c448
Contextual Info: H E D I 4Û554SE IN TE R N A TIO N A L ODGÖL.Tfl 4 | Data Sheet No. PD-9.510A R E C T IF IE R INTERNATIONAL RECTIFIER I«R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFZ44 IRFZ45 N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-220AB Plastic Package

Contextual Info: TOSHIBA 2SJ338 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ338 AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : ^ D S S ~ —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.

FL 210 transistor

Abstract: LF2805A 1000 MHz transistor 5W RF TRANSISTOR 1 WATT transistor 5w
Contextual Info: = - = -’ = RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz LF2805A Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation

Mosfet T460

Abstract: T460 mosfet c947 transistor transistor sb 772 C947 8028 ae 2SK2409 2SK240 tea 1020 SB 772
Contextual Info: 7*— *$? • i s — h M O S * IM & * M O S f e t MOS Field Effect Transistor 2SK2409 N51-V ^ ; u /\0|7 -M O S F E T ^ 'f > y >7 X Ü Æ 2 S K 2 4 0 9 ÌN ^ * J U ÌÉ M m ° 7 -M O S F E T T , t * u, y o * =l x - * < 7 * > 4.5 ± 0.2 10.0 ± 0.3 # «