FK16KM5 Search Results

50L2

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING • V d s s .2 5 0 V • rDS ON (MAX) .0.31 Q

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s . 250V rDS ON (MAX) .0.31 Í2

Contextual Info: m UBEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt Form Ddtd Selector Guide Discrete MOSFET - Medium Voltage (continued) FK Series MOSFETs (250 ~ 600V) Fast Recovery Diode (trr = 150nS) Maximum Ratings, Tc = 25°C

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

T1027

Contextual Info: FK16KM-5 High-Speed Switching Use Nch Power MOS FET REJ03G1387-0200 Previous: MEJ02G0197-0101 Rev.2.00 Jul 07, 2006 Features • • • • • VDSS : 250 V rDS (ON) (max) : 0.31 Ω ID : 16 A Viso: 2000 V Integrated Fast Recovery Diode (MAX.) : 150 ns

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

FK16KM-5

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: FK16KM-5 High-Speed Switching Use Nch Power MOS FET REJ03G1387-0200 Previous: MEJ02G0197-0101 Rev.2.00 Jul 07, 2006 Features • • • • • VDSS : 250 V rDS (ON) (max) : 0.31 Ω ID : 16 A Viso: 2000 V Integrated Fast Recovery Diode (MAX.) : 150 ns

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

FK16KM-5

Abstract: FK16KM5
Contextual Info: MITSUBISHI Nch POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 250V