FJ6K01 Search Results
FJ6K01 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FJ6K01010L | Panasonic Electronic Components | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 12V 4A WSMINI6 | Original | 405.19KB | 
FJ6K01 Price and Stock
| Panasonic Electronic Components FJ6K01010LMOSFET P-CH 12V 4A WSMINI6 | |||||||||||
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FJ6K01 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| Contextual Info: Doc No. TT4-EA-12484 Revision. 2 Product Standards MOS FET FJ6K01010L FJ6K01010L Silicon P-channel MOS FET Unit : mm 2.0 For switching 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low drain-source On-state resistance : RDS on typ. = 26 m  ( VGS = -4.5 V ) | Original | TT4-EA-12484 FJ6K01010L UL-94 | |
| Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FJ6K0101 Silicon P-channel MOS FET For load switch circuits • Overview  Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load switch circuits.  Features  Low drain-source ON resistance: RDS(on) = 36 mW (VGS = –1.8 V) | Original | 2002/95/EC) FJ6K0101 FJ6K0101 | |
| FJ6K0101Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FJ6K0101 Silicon P-channel MOS FET For load switch circuits • Overview  Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load switch circuits.  Code WSMini6-F1-B | Original | 2002/95/EC) FJ6K0101 FJ6K0101 | |
| Contextual Info: Realizing miniaturization of the set and loss reduction by small package and low on-resistance P-channel MOS FET FJ6K0101 for load switches  Overview FJ6K0101 is a low-on-resistance MOS FET which is suitable for load switches. It is a halogen-free small package WSMini6-F1-B | Original | FJ6K0101 DD00003AE | |
| FJ6K0101
Abstract: ZJF00146BED 
 | Original | 2002/95/EC) FJ6K0101 FJ6K0101 ZJF00146BED | |
| fj6k01Contextual Info: FJ6K01010L FJ6K01010L Silicon P-channel MOSFET Unit: mm for Switching • Features  Low drain-source On-state Resistance:RDS on typ. = 26 mΩ (VGS = -4.5 V)  Low drive voltage: 1.8 V drive  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) | Original | FJ6K01010L UL-94 FJ6K01010L SC-113DA fj6k01 | |
| MN864779
Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY 
 | Original | A000021E MN864779 MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY |