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FJ6K0101 Abstract: ZJF00146BED Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FJ6K0101 Silicon P-channel MOS FET For load switch circuits • Overview  Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load switch circuits.  Features  Low drain-source ON resistance: RDS(on) typ. = 36 mW (VGS = –1.8 V)	Original	2002/95/EC) FJ6K0101 FJ6K0101 ZJF00146BED	PDF

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FJ6K0101

Abstract: ZJF00146BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FJ6K0101 Silicon P-channel MOS FET For load switch circuits • Overview  Package FJ6K0101 is the low on-resistance P-channel MOS FET designed for load switch circuits.  Features  Low drain-source ON resistance: RDS(on) typ. = 36 mW (VGS = –1.8 V)

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2002/95/EC) FJ6K0101 FJ6K0101 ZJF00146BED

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