FJ DIODE Search Results

5410-GO

Contextual Info: Lumineszenzdioden Light Emitting Diodes Radiale LED Radial LEDs Type Emissionsfarbe Emission color ^•peak Gehäusefarbe ty p Case color nm m cd 3 mm LED LS LS LS LS 3380-FJ 3 3 8 0 -H 3380-J 3380-HL LY LY LY LY LY 3380-FJ 3380-H 3380-J 3380-K 3380-HL

5380-FJ

Abstract: Q220-1 5469-FH
Contextual Info: Lumineszenzdioden Light Emitting Diodes Radiale LED Radiai LEDs Type Emissionsfarbe ^•paah Gehäusefarbe Iv Emission color typ. Case color nm mcd 5 mm LED I1 LS LS LS LS 5380-FJ 5380-H 5380-J 5 3 8 0 -HL LY LY LY LY 5380-FJ 5380-H 5380-J 5380-HL LG LG

Wavecom wmoi3

Abstract: wmoi3 gsm modem circuit gsm modem sim 900 Wavecom wavecom GSM wmoi3 wavecom GSM Modem medl Alla antenne
Contextual Info: Information från Intectra AB. Sikom GSM Fixi, fjärrstyrd strömbrytare via GSM-nätet. • Kräver ingen fast teleanslutning. GSM nätet används för att förmedla fjärrstyrningen. • Enkel att montera. GSM Fixi är kapslad i en s.k. DIN-kapsling för enkelt montage i t.ex. en elcentral.

0C72

Abstract: THEFT CSR BC5 BC5 CSR rc21 series bc6 csr block 106416 ccd board crt OSD on-screen display OSD data slicer
Contextual Info: M306V7MG/MH/MJ/MJA-XXXFP, M306V7FG/FH/FJ/FJAFP REJ03B0094-0100Z Rev.1.00 May 18, 2004 SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER with CLOSED CAPTION DECODER and ON-SCREEN DISPLAY CONTROLLER 1. DESCRIPTION The M306V7MG/MH/MJ/MJA-XXXFP and M306V7FG/FH/FJ/FJAFP are single-chip microcomputers using the high-performance silicon gate CMOS process using a M16C/60 Series CPU core and are packaged

JANTX 1N5811

Abstract: 1N5807 JANTXV MIL-S-19500/477 1N5807 1N5807US 1N5809 1N5809US 1N5811 1N5811US IR 652 P
Contextual Info: ^ 1N5807US fj SEMTECH ULTRAFAST RECOVERY Todby ’ b Results — .1 0 morrow s Visio April 20, 2000 1N5809US 1N5811US TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com QUICK REFERENCE DATA SURFACE MOUNT HERMETICALLY SEALED ULTRAFAST RECTIFIER DIODE

1N5802US

Abstract: 1N5802 1N5804 1N5804US 1N5806 1N5806US MIL-STD-701
Contextual Info: ^ 1N5802US fj SEMTECH Todb y ’ b Results — .10morrow s Visio April 20, 2000 ULTRAFAST RECOVERY 1N5804US 1N5806US TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com QUICK REFERENCE DATA SURFACE MOUNT HERMETICALLY SEALED ULTRAFAST RECTIFIER DIODE

diode marking code fj

Abstract: marking 724 diode SOT23 MARKING code fj SOT23 code fj SB491D marking code TS
Contextual Info: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter

marking 724 diode

Abstract: SOT23 code fj marking code fj sot-23 marking code IR
Contextual Info: SB491D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply power supply applications Feature • 3 Ultra Low VF 2 1 SOT-23 Plastic Package Marking Marking Code: FJ Absolute Maximum Ratings Ta= 25OC Parameter

04180

Abstract: QSound op27p op27
Contextual Info: Fj g M, j SEMICONDUCTOR ALPHA AS OP-27 Excellence in Analog Power Products Ultra Low Noise Precision Operational Amplifier FEATURES • Low offset Vos. 10nV Max. • Low drift vs. temperature. 0.2nV/°C

T670-FJ

Contextual Info: Lumineszenzdioden Light Emitting Diodes SMT-LED SMT-LEDs Type Emissionsfarbe Emission color typ [nm) Farbe der Uchtaustrittsfläche Color of light I, emitting area [mcd] Multi TOPLED" (Forts.) at q>v [mlm] 1 610/ 565 LYP T670-FJ LYP T670-G LYP T670-H LYP T670-GK

OP298B

Abstract: OP293 OP293A OP293B OP293C OP298 OP298C OP593 OP598 LIL flange
Contextual Info: OPTEK Product Bulletin OP293 April 1993 GaAIAs Plastic Infrared Emitting Diodes Types OP293 and OP298 Series .230 S.84 ‘ .210(5.33)' .225 (5.72) . .03(0.76) (NOTE 13) ml in op!SQ N0M .015 (0.38) ANODE i— 190 (4 .83 ) .178 ( 4 . 62 ) . I _ Fj 1 ^ V

ERG27-10

Abstract: B2-18 ERG27 ERG77 ERG77-10 T151 T930
Contextual Info: ERG27*ERG77 3 oa •1000V *±'*7-^*-K • ■ O utline D raw in g s FAST RECOVERY DIODE • Features • i'a 's ’?-"/'? • Glass passivated chip High voltage • Stud mounted : Applications • Switching power supplies • M 7 fJ —fr'fJU Free-wheel diode

INFRARED DIODES

Abstract: tps 20 TSTA7200
Contextual Info: U I - , I TELEFUNKEN ELECTRONIC 17E I> • fl'^OG'ib DD0Ö7D2 b M A L G G T< > T A 7 9 0 0 m ilF W K lI fj electronic u CrMtrve1tchnoiog«$ GaAIAs Infrared Diodes in Hermetically Sealed Cases Applications: Radiation source in near infrared range

Contextual Info: fJßvO Advanced Product Information EhMhDIGICS l: Your GaAs IC Source mmrni 10 M H z - 3 ^ APPLICATIONS FEATURES H 1 8 0 ° Phase Difference 0 to 4 GHz H Two Phase Clock Drivers H 0.5 dB Amplitude Balance H Diode Bridge Drivers 1 30 dB Reverse Isolation H

Contextual Info: TOSHIBA 1SV 310 TOSHIBA DIODE 1 S V 3 10 VCO FOR UHF BAND RADIO • High Capacitance Ratio SILICON EPITAXIAL PLANAR TYPE Unit in mm : C i y / C 4 V = 2.1 Typ. + 0,2 1 .2 5 -0 .1 Low Series Resistance • : rs = 0.28f2 (Typ.) fj \ Useful for Small Size Tuner

Contextual Info: PREPARED BY: DATE: SH ARP APPROVED BY: DATE: SPEC. No. ED-99059A SSUE April 16, 1999 ÌÌ ELECTRONIC COMPONENTS GROUP SHARP CORPORATION |> PAGfe ^ t '-’-Y \ 21 Pages if kL -•'* ;/ 1 • ^REPÇESENTA' SPECIFICATION SION OPTO-EDECTRONICDEVK ''C ' / fJ _ >r

diode zener s4

Abstract: AIR FLOW DETECTOR CIRCUIT DIAGRAM CA1391E
Contextual Info: CA1391, CA1394 fJ A R R IS OBSOLETE PRODUCT May 1999 NO RECOMMENDED R^ oQQ 442-7747 Call Central Applications 1-800-442 774 ^ centapp@harr,s.com TV Horizontal Processors Description Features CA1391E - Positive Horizontal Sawtooth Input CA1394E - Negative Horizontal Sawtooth Input

Contextual Info: C fJ H A R R SP720 IS S E M I C O N D U C T O R Electronic Protection Array for ESD and Over-Voltage Protection Aprii 1996 Features Description • ESD Interface Capability for HBM Standards - MIL STD 3015.7 . 15kV

Contextual Info: [fj ql^ ity S em iconductor , I n c . QuickSwitch Products High-Speed CMC6 Hn D -+ I n I 10-B t Low Power, Low Resistance Bus Switches QS3LR384 advance INFORMATION FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 2.5Q. bidirectional switches connect inputs

Contextual Info: ERE24* ERE74 2 oa FAST RECOVERY DIODE I Features • Glass passivated chip • 7 *9 vj Y16 Stud mounted : Applications + .T A 'V l - 's y ^ 31 • ?-3 'y '< — Switching power supplies Free-wheel diode fr 'fJ ir • •' <7— Snubber diode • Others. Maximum Ratings and Characteristics

OD-669

Abstract: AT25 diode b33
Contextual Info: OPTO DIODE CORP SSE D • □□□□124 7T7 ■ O HIGH-POWER GaAIAs ILLUMINATOR P D fj» OD-669 FEATURES • High reliability LPE GaAIAs IRLEDs • Highest power output available • 880nm peak emission • Nine chips connected in series • TO-66 header with BeO substrates for

ISOWATT221

Abstract: stp3n80xi
Contextual Info: £ fj SGS-THOMSON STP3N80XI i!Ll ir^©D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP3N 80XI 4.5 a 800 V 1 .7 A . . . . . • AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE

Contextual Info: FSJ9055D, FSJ9055R tfV W S Ju ly 1999 p O S S '^ fj|0 5 5 O Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

LP 7510

Abstract: MA801
Contextual Info: Light Emitting Diodes Lumineszenzdioden SMT-LEDs11 SMT-LED1> Type E m issionslarbe Emission color \>eak Farbe der Licht­ nm S A670-HK A670-J A670-K A670-JL LG LG LG LG A670-HK A670-J A670-K A670-JL LP LP LP LP A670-FJ A670-G A670-H A670-GK Color of light