1N5804US Search Results

1N5806 JANTXV

Abstract: MIL-S-19500/477 1N5806US 1N5806 1N5802 1N5802US 1N5804 1N5804US DIODE 1N5804 1N5806US JANTXV
Contextual Info: 1N5802US 1N5804US 1N5806US ULTRAFAST RECOVERY April 20, 2000 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com SURFACE MOUNT HERMETICALLY SEALED ULTRAFAST RECTIFIER DIODE •= Extremely low reverse recovery time •= Hermetically sealed to ensure reliable operation under

1N5802US

Abstract: 1N5802 1N5804 1N5804US 1N5806 1N5806US MIL-STD-701
Contextual Info: ^ 1N5802US fj SEMTECH Todb y ’ b Results — .10morrow s Visio April 20, 2000 ULTRAFAST RECOVERY 1N5804US 1N5806US TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com QUICK REFERENCE DATA SURFACE MOUNT HERMETICALLY SEALED ULTRAFAST RECTIFIER DIODE

1n5806us

Abstract: 1N5806US JANTXV
Contextual Info: 1N5802US, 1N5804US, 1N5806US and URS Available on commercial versions VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability

5806US

Contextual Info: 1N5802US/1N5804US/1N5806US Superfast Recovery Diodes Surface Mount US POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA Very low reverse recovery time

1N5806US

Abstract: 1N5802US 1N5806US JANTXV
Contextual Info: 1N5802US, 1N5804US, 1N5806US and URS Available on commercial versions VOIDLESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS Qualified per MIL-PRF-19500/477 DESCRIPTION This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability

1N5804US

Contextual Info: Web Datasheet- Power Rectifier Web Datasheet POWER RECTIFIER PART NUMBER: 1N5804US PACKAGE STYLE:MELF-A CONFIGURATION:SINGLE ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED. Disclaimer MAXIMUM RATINGS / Conditions SYMBOL MAX PIV 100 Volts MAXIMUM DC OUTPUT CURRENT @ Tc=55 °C

1N5806US JANTXV

Abstract: 1N5806US JANTX 1N5806US mil-prf-19500/477 1N5802US 1N5804US
Contextual Info: 1N5802US/1N5804US/1N5806US Superfast Recovery Diodes Surface Mount US POWER DISCRETES Description Features Quick reference data u u u u VR 50 -150 V IF 1N5802US to 1N5806US = 2.5A trr 1N5802US to 1N5806US = 25nS IR 1N5802US to 1N5806US = 1µA Very low reverse recovery time

1N589

Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Contextual Info: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993

1N6624U JANTXV

Abstract: "Ultra-Fast Recovery Rectifiers" 1N6629U JANTX JANTX 1N5811
Contextual Info: HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25 nsec ≤ trr ≤ 70 nsec TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAXIMUM REVERSE CURRENT @ PIV Volts Amps 55°C 100°C µAmps 25°C 100°C SRS160HE SRS180HE SRS1100HE 600 800

1N3595US

Abstract: 1N5820US 1N6642US microsemi 1N5616US 1N5617US 1N5804US 1N5806US 1N6638US 1N6639US 1N6642US
Contextual Info: Summer 1997 ESA SMT Qualifications Microsemi Ireland has just agreed with the European Space Agency at Noordwiijk, Holland to fully qualify several popular families of Signal Diodes and Power Rectifiers. The qualification work will start immediately and is expected to

5d 3kv

Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage

1N5806US

Abstract: 1N5802US 1N5803US 1N5804US 1N5805US
Contextual Info: Certificate : TH97/10561QM 1N5802US - 1N5806US GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS PRV : 50 - 150 Volts Io : 2.5 Amperes SMA DO-214AC Glass passivated junction chip High current capability High surge current capability High reliability Low reverse current

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 VOIDLESS - HERMETICALLY- SEALED

1n5811us jantxv melf

Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland. Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 VOIDLESS - HERMETICALLY- SEALED

Model 4065

Abstract: 1N5807 ir2175
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 September 2007. MIL-PRF-19500/477H 22 June 2007 SUPERSEDING MIL-PRF-19500/477G 22 March 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,

Contextual Info: 1N5802US thru 1N5806US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure

Contextual Info: SENSITRON SEMICONDUCTOR 1997 • SHORT FORM CATALOG HERMETIC SURFACE MOUNT RECTIFIERS - MELFs o 0 </> Volts c o PEAK INVERSE VOLTAGE VI TYPE NUMBER o o CM GENERAL PURPOSE tr MAX. AVG. DC OUTPUT CURRENT MAXIMUM REVERSE CURRENT @ PIV Amps uAmps 25°C 100°C

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

477J

Abstract: mil-prf-19500/477 JANTX 1N5811 1N5804URS 1N5807 JANTXV 1N5811URS 1N5802 1N5802US 1N5804 1N5804US
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 April 2009. INCH-POUND MIL-PRF-19500/477J w/AMENDMENT 1 28 January 2009 SUPERSEDING MIL-PRF-19500/477H 14 November 2008 PERFORMANCE SPECIFICATION SHEET

137 742a

Abstract: 1n5802cbus tungsten slug glass diode 1N5806CBUS cbus mil-prf-19500/477 1N5806CB 1N5811CBUS mil-prf-19500/742 1n5804cb
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2009. INCH-POUND MIL-PRF-19500/742A 28 August 2009 SUPERSEDING MIL-PRF-19500/742 1 June 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,

smd 1N5806US

Abstract: DSAIH0002550
Contextual Info: For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are ideal for use in aircraft or satellite power supplies. These SMD parts are available in JAN, JTX, JTXV and JANS levels per MlL-S-19500/477.

2KV DIODE

Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
Contextual Info: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical

High-Rel Discrete Semiconductors

Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Contextual Info: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied

1N6133

Abstract: spb25 jan 1N6113US 1N4245 JTX 1N6650-1 mil-prf-19500/1N5553US
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision MIL-PRF-19500 QUALIFIED PRODUCTS LIST Part Number 1N3611 1N3612 1N3613 1N3614 1N3957 1N4245 1N4246 1N4247 1N4248 1N4249 1N4942 1N4944 1N4946 1N4947 1N4948 1N5186 1N5187 1N5188 1N5190 1N5415 1N5415US