FFS SMD Search Results

irg4pc50fd

Abstract: RG4PC30FD
Contextual Info: nternationol I G R Rectifier Pari IGBTs V - VCES Max.VcE on Collector-to-Emitter Voltage Colledor-lo-Emitlef Voltage (V) 00 Number £ N ffS •c Continuous Collector Current Tr =25°C T r=25°C (A) (A) h Fax Max. Power Dissipation (W) Demand Number on Xï vL )/

Contextual Info: 127mm L 27mm. {0.05'' Center SMD Pin Header Dual Row 10 io 100 Contacw 0083D Series 04m m \ 0,l)157/;i Square IV>yj A P P L IC A T IO N 1 . S id e 2. V a ria b le 3. S ta n d o ffs 4 . M a tes such AND F E A T U R E S s tc c k o b le p in S P E C IF IC A T IO N S

Contextual Info: ECLiPTEK' CORPORATION EV32C6 Series Voltage Controlled Crystal Osdllator VCXO 3.3V Supply Voltage HCMOS output with Tri-State function Ceramic 6-pad SMD package APR Performance to ±100ppm Commerdal and Industrial Temperature Range ^ELECTRICAL SPECIFICATIONS

smd FFs

Abstract: FFs smd
Contextual Info: SMD CSSPD KP SERIES K P ^ U -X • O U TL IN E D IM E N S IO N S KP10N12, 14 ■ RATINGS Absolute Maximum Ratings Item Symbol Conditions ^_J[ype IMo, KP10N12 T s tg -4 0 -125 •c Ju n c tio n T em perature Tj 125 ‘C Surge O n-S tate Current I tsm d v /d t

Contextual Info: SMD CSSPD KL SERIES K L ìs 'J -X • OUTLINE DIMENSIONS KL3N14 24 4.2 ■ RATINGS Absolute Maximum Ratings Electrical Characteristics Breakover V o lta g e V B0 O ff-S ta te C urre nt Idrm H o lding C urre nt IH O n -S ta te V o lta g e VT J u n c tio n C a p a c ita n c e

cv190

Contextual Info: SMD CSSPD KP SERIES KP S/'J-X • OUTLINE DIMENSIONS KP4R25 f cd u v e o <3 . CM ft«/ sQ / ‘/ A . / - 1 >■7 > < V K< r> *9—y CM 7.6 t , ! F : m m ■ RATINGS Absolute Maximum Ratings Item Symbol Storage Temperature Junction Temperature Maximum O ff-State Voltage

Contextual Info: SMD CSSPD KP SERIES KPS/'J-X • OUTLINE DIMENSIONS KP15L07, 08 ■ RATINGS Absolute Maximum Ratings -^ _ T y p e N o, Item Sym bol Storage Temperature Tstg - 4 0 -125 •c Junction Temperature Tj 125 •C Maximum O ff-State Voltage Conditions Vj>R]k| 58 Itsm

Contextual Info: T k B ilH l? Crystal Unit KSS CX-49G a n s i- n s ') - k $ < ~ f/ SMD • ^ H /F e a tu re s • KffiJtSSftWJE7 M M U c M T T o • It is a 4.5mm high, compact, crystal unit for surface mounting. • It is able to cope by means of a metal case and completely sealed

bluetooth AVR

Abstract: interface bluetooth with AVR ATMEGA 16 AT89S55WD interface bluetooth with AVR ATMEGA8 AT89S55 interface bluetooth with AVR atmega128 TH7890M Battery Charging Controller with ATMega8 AT89S51RC Pt 1000 sensor connection avr
Contextual Info: R PRODUCT GUIDE September 2001 AT90 Series AVR Flash Microcontrollers Part Number Processor Description Availability AT90S1200 AVR AVR RISC, In-System Programmable Microcontroller with 1K Byte Flash and 64 Bytes EEPROM, 20-pin PDIP, 20-lead SOIC and 20-lead SSOP Packages

741 comparator

Abstract: tba 741 tba222 ic 741 comparator SMD 741 amplifier MA 741 ic 741 TBA221B Q67000-A281 tl 741
Contextual Info: Single Operational Amplifiers TBA 221; TBB 741 TBA 222; TBB 742 Bipolar IC Features • • • • • • • • NPN input High differential input voltage Short-circuit proof High voltage gain High supply voltage 44 V Wide temperature range TBA 222, TBB 742

smd diode marking JC

Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Contextual Info: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g

Contextual Info: Schottky Barrier Diode Single Diode M2FH3 U n it ‘ m m Package : M2F Weight 0.072« T y p 30V 6A Feature • /JvguSMD •«« V f=0.36V • Small SMD • Super-Low Vf=0.36V • I { "J t U — iiJ S K ih • Reverse connect protection for DC power source

Contextual Info: OSCILLATORS 5 .0 x 3 .2 m m SEA M SEALED TCXO / 7P SERIES • Features - Temperature-Compensated Crystal Oscillator TCXO - ForH andsetand Other W ireless Applications - 5.0mm x3.2m m x 1.5mm SMD 13 to 26 MHz - Analog- or Digitally-Compensated Available -

ffs transistor smd

Contextual Info: SG508 5ILICDN GENEF^L QUAD-NAND DRIVER U N EA R INTEGRATED CIRCUITS D E S C R IP T IO N FEATURES The SG508 is a Quad 2- Input N AND Driver with outputs capable of sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate

Contextual Info: HAL400, HAL401 Linear Hall Effect Sensor ICs in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. PRELIMINARY DATASHEET Marking Code Temperature Range Type A E C HAL400SO 400A 400E 400C HAL401 SO 401A 401 E

Contextual Info: CRYSTAL OSCILLATORS CRYSTAL OSCILLATORS Ultra Miniature size SMD VC- TCXO S'J'fflRBHSM(vc-)TCXO DTO-341K2, DTO-441K2 SERIES •Features ■ftn • 1.7mm Hight • m >m SMD-VC-TCXO(O.lcc) • Ultra miniature size(O.lcc) • il«(D .3s max.) • Light weight(0.3g max.)

TSH31

Contextual Info: Gl SGS-THOMSON TSH31 [ ID Œ S iü IM ï n 280MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER VERY LOW INPUT CURRENT : 2pA typ GAIN BANDWIDTH PRODUCT : 280MHz GAIN OF 2 STABILITY SLEW RATE : 300V/|is STANDARD PIN OUT N DIP8 D S08 P la stic P a cka g e

Contextual Info: /T T SGS-THOMSON *7M, HD i[Li gìrMD(g@ TSH11 120MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER . . . . . VERY LOW INPUT CURRENT : 2pA typ GAIN BANDWIDTH PRODUCT : 120MHz UNITY GAIN STABLE SLEW RATE : 150V/|is STANDARD PIN OUT N DIP8 D S08 (P la stic P a cka g e

magnetic sensor circuit diagram

Abstract: Magnetic Field Sensor linear displacement sensor specification MAGNETIC PROXIMITY SENSOR application note hx 36 KMZ11B1 MLC716 strong magnetic field sensor hx 002
Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The KM Z11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field

1B68-550-547

Abstract: LT1037A MIL-M-3B510
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-OA Table I: Exclude VjQ and aVjq /Atemp from PDA. if not tested, en and in at fo = 100 Hz. Guarantee, APPROVED 1989 NOV 15 Delete subgroups => r 2 and 3 for Iq S . Change Zq to Rq and maximum limit to P^, subgroup 1.

TSH321

Contextual Info: Gl SGS-THOMSON TSH321 [ID Œ S iü IM ï n WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 300MHz GAIN OF 2 STABILITY SLEW RATE : 400V/|is VERY FAST SETTLING TIME : 60ns 0.1% VERY HIGH INPUT IMPEDANCE

Contextual Info: G l SGS-THOMSON TSH150 [ I D Œ S iü I M ï  n WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SLEW RATE : 190V/|is VERY FAST SETTLING TIME : 20ns 0.1% N DIP8 D S08

Mil-Std-883B

Abstract: smd FFs antifuse programming technology resistance array smd transistor military datasheet CF100 CF160 antifuse QuickLogic
Contextual Info: pASIC Military FPGAs Non-Volatile, High Reliability and High Security Programmable Logic Solutions Rev. A FAMILY HIGHLIGHTS High Reliability -Available in Military Temperature and MIL-STD-883B/SMD -Standard Microcircuit Drawings SMD available Design Security

CF100

Abstract: Mil-Std-883B antifuse programming technology pASIC 1 Family smd FFs CF160
Contextual Info: pASIC Military FPGAs Non-Volatile, High Reliability and High Security Programmable Logic Solutions Rev. A FAMILY HIGHLIGHTS High Reliability -Available in Military Temperature and MIL-STD-883B/SMD -Standard Microcircuit Drawings SMD available Design Security