FET T02 Search Results

Contextual Info: AMPLIFIERS Thin film - GaAs Fet AMPLIFIERS THIN FILM - GaAs FET T02000 SERIES Description Features • Medium power amplifiers • Frequency range: 400 to 4500 MHz • Hermetic package Applications Operating characteristics • Military and space • Telecommunications

Contextual Info: M O TO RO LA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P03HDL HDTMOS E-FET™ High Density Power FET DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e TMOS POWER FET LOGIC LEVEL 19 AMPERES

Contextual Info: MOTOROLA O rder this docum ent by M TD20P06HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P06HDL H D T M O S E-FET™ H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt Motorola Preferred Device TMOS POWER FET LOGIC LEVEL

Contextual Info: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate

MPF89

Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Contextual Info: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max

Contextual Info: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET

2955E

Abstract: MTA2955E
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM

Contextual Info: MOTOROLA Order this document by MTD20N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand

uc2710

Contextual Info: UC1710 UC2710 UC3710 UNITROOE High Current FET Driver FEATURES DESCRIPTION • Totem Pole Output with 6A Source/Sink Drive The UC1710 family of FET drivers is made with a high-speed Schottky pro­ cess to interface between low-level control functions and very higfi-power

Contextual Info: MOTOROLA Order this document by MTP29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TP29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy

LM780L05ACM-ND

Abstract: PTFB193408SVV1R250XTMA1
Contextual Info: PTFB193408SV Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193408SV is a 340-watt symetrical push-pull LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Features include input

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

TO-3P Jedec package outline

Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
Contextual Info: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof

Contextual Info: MOTOROLA O rder this docum ent by M TD1N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N60E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERE 600 VOLTS N-Channel Enhancement-Mode Silicon Gate

mosfet J 3305

Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
Contextual Info: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,

C1710

Contextual Info: UC1710 UC2710 UC3710 y UNITRO DE High Current FET Driver FEATURES DESCRIPTION • Totem Pole Output with 6A Source/Sink Drive The U C 1710 family ot FET drivers is made with a high-speed Schottky pro­ cess to interface between low-level control functions and very high-power

Contextual Info: MOTOROLA O rder this docum ent by M TD5N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD5N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 5.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TD1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD1N80E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate

Jab zener

Contextual Info: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)

Contextual Info: TetraFET III iFFi I h D1084UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 965 -k 1 10.66 4.19 4.82 -4 .8 2 J 5.33 3.83 Dia. 4.08 1.39 66 T 3.'42 1.01 1.52 i GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W - 28V - 200MHz

Contextual Info: INTEGRATED CIRCUITS UC1710 UC3710 U IX IITR O D E High Current FET Driver PRELIMINARY DESCRIPTION FEATURES Totem Pole Output with 6A Source/Sink Drive 35 nseo Delay 25 nsec Rise and Fail Time into 2.2nF The UC1710 family of FET drivers is made with a high-speed Schottky process to interface

Contextual Info: Preliminary data SIEMENS BTS611 TWO CHANNEL PRO FET D escrip tion PR O FET R an in telligen t p o w e r switch w ith in tegrated Two independent high-side switches Overtem perature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection

2SK126

Abstract: 2SK1266
Contextual Info: Pow er F-MOS FET 2SK1266 2SK1266 Silicon N-channel Power F-MOS FET • Features • • • • ■ Package Dimensions Low ON resistance RDs on : R DS (on) 1 = 0 .080 (typ.) High switching rate : tf= 180ns (typ.) No secondary breakdown For low voltage driving ( V g s = 4V)

2SK770

Contextual Info: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage