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    FET SMD Search Results

    FET SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PKMCS0909E4000-R1
    		Murata Manufacturing Co Ltd PIEZOELECTRIC SOUNDER SMD , 12.5V PDF
    10147073-2600RLF
    		Amphenol Communications Solutions Minitek® Microspeed 1.00mm, Board-to-Board Connector, Right Angle Receptacle SMD 26P, Poka yoke PDF
    10147074-4400RLF
    		Amphenol Communications Solutions Minitek® Microspeed 1.00mm, Board-to-Board Connector, Right Angle Receptacle SMD 44P, Poka yoke PDF
    10150098-3200RLF
    		Amphenol Communications Solutions Minitek®MicroSpeed 1.00mm Board-to-Board Connector,Vertical Header SMD 32P PDF
    10150095-3200RLF
    		Amphenol Communications Solutions Minitek®MicroSpeed 1.00mm Board-to-Board Connector,Right Angle Receptacle SMD 32P PDF

    FET SMD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GP145

    Abstract: MGF0915A PO36 MGF0915 fet GP145
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		mgf0915a26dbm800magp145+3po36mgf0915fet gp145 PDF

    MGF0914A

    Abstract: fet 4901 0648
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		mgf0914a26dbm800ma50ohm+2fet 49010648 PDF

    SMD CODE MARKING s7 SOT23

    Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
    Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes


    OCR Scan     		applicat174pmbfj175pmbfj176pmbfj177+9ot-23ot-89ot-143ot-223smd code marking s7 sot23pmbfj111pmbfj174bsr56bft46 PDF

    uhf 1kw amplifier

    Abstract: MGF0916A
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES


    Original     		mgf0916a23dbm100mauhf 1kw amplifier PDF

    MGF0913A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    Original     		mgf0913a31dbm18dbm200ma+2unit3950ohm PDF

    FET K 1358

    Abstract: 9452 smd MGF0916A fet smd 2657 FET
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		mgf0916a23dbm100ma50pcs+5june/2004fet k 13589452 smdfet smd2657 fet PDF

    MGF0915A

    Abstract: GP145 MGF0915 PQ-32/CTD-17765
    Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm TYP. @ f=1.9GHz,Pin=23dBm


    OCR Scan     		mgf0915a23dbmgp145mgf0915+1pq-32/ctd-17765 PDF

    MGF0913A

    Contextual Info: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm


    OCR Scan     		mgf0913a31dbm18dbm200ma PDF

    ADD30

    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power


    OCR Scan     		mgf0916a23dbm100maadd30 PDF

    GP145

    Abstract: MGF0915
    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power


    OCR Scan     		mgf0915a26dbmgp145mgf0915 PDF

    MGF0916A

    Abstract: 094-3 MAG
    Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=23dBm TYP. @ f=1.9GHz,Pin=5dBm


    OCR Scan     		mgf0916a23dbm100ma094-3 mag PDF

    MGF0913A

    Abstract: 1709-1
    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES


    OCR Scan     		mgf0913a31dbm18dbm200ma+11709-1 PDF

    FET K 1358

    Abstract: MGF0916A gp 752 9452 smd
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		mgf0916a23dbm100ma50pcs+3fet k 1358gp 7529452 smd PDF

    MGF0913A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		mgf0913a31dbm18dbm200ma+150pcs PDF

    Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Unit: FEATURES • High output power


    OCR Scan     		mgf0914a26dbm800ma PDF

    gm 4511

    Abstract: GP 841 Diode MGF0917A scl 1444
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm


    Original     		mgf0917a24dbmgm 4511gp 841 diode+1scl 1444 PDF

    4977 gm

    Abstract: MGF0919A
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


    Original     		mgf0919a30dbm12dbm300ma+14977 gm PDF

    Mag 613

    Abstract: MGF0918A
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


    Original     		mgf0918a27dbm150mamag 613 PDF

    MGF0920A

    Abstract: n channel fet k 1118
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm


    Original     		mgf0920a32dbm15dbm400ma+1n channel fet k 1118 PDF

    mitsubishi 7805

    Abstract: 7805 pi MGF0918A 7805 smd
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


    Original     		mgf0918a27dbm150ma50pcs+4d-162mitsubishi 78057805 pi7805 smd PDF

    Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0919A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=30dBm TYP. @ f=1,9GHz,Pin=12dBm


    OCR Scan     		mgf0919a30dbm12dbm300ma+1voltage154 PDF

    MGF0913A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm


    Original     		mgf0913a31dbm18dbm200ma PDF

    MGF0916A

    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm


    Original     		mgf0916a23dbm100ma PDF

    MGF0920A

    Abstract: IM335 pt 11400
    Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm


    Original     		mgf0920a32dbm15dbm400ma+450pcst-155im335pt 11400 PDF