FET MODEL Search Results

Curtice

Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Contextual Info: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the

AN569

Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high

Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to

ISL6258

Abstract: isl6266a 48v 2.5a charger using uc3842 ISL6726 ISL6258A 40A 48v charger Schematic Diagram uc3842 battery charger schematic schematic diagram 48v ac regulator uc3842 isl6266 24v dc power supply with uc3842
Contextual Info: Intersil Power Management Solutions 2010 Product Selection Guide Inside: Battery Management Digital Power Drivers FET Drivers Hot Plug Controllers Integrated FET Switching Regulators Isolated PWM Controllers LDO / Linear Regulators ORing FET Controllers PMIC

MTP75N03HDL

Abstract: MTP75N03HDL/D
Contextual Info: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET  High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES

ISL95835

Abstract: isl6258 ISL6258A ups circuit schematic diagram 1000w 1000w class d circuit diagram schematics 1000w SMPS CIRCUIT DIAGRAM ISL95831 1000W full bridge regulator 15000w power amplifier circuit diagram SCHEMATIC 12v 1000w smps
Contextual Info: INTERSIL SELECTION GUIDE POWER Battery Management, Digital Power, Drivers FET Drivers, Hot Plug Controllers Integrated FET, Switching Regulators Isolated PWM Controllers, LDO / Linear Regulators, LED Drivers ORing FET Controllers, PMIC, Power Modules Power Sequencers, PWM Controllers, Voltage Monitors

AS4321

Abstract: MGFC45B3436B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45B3436B 3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic

NE70083

Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,

AN569

Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838
Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM

transistor z3m

Abstract: Z3M IC z3m Transistor Z3M Y
Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM

Contextual Info: MOTOROLA Order this document by MTB35N06ZL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB35N06ZL HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 35 AMPERES 60 VOLTS RDS on = 26 mΩ N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

AN569

Abstract: MTD20N03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTD20N03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20N03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS on = 0.035 OHM

INA111BU

Abstract: INA111 INA111AP INA111BP
Contextual Info: INA111 High Speed FET-Input INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION ● FET INPUT: IB = 20pA max ● HIGH SPEED: TS = 4µs G = 100, 0.01% ● LOW OFFSET VOLTAGE: 500µV max The INA111 is a high speed, FET-input instrumentation amplifier offering excellent performance.

Contextual Info: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N05HDL HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TM O S POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

Contextual Info: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB4N80E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate

VD F1 SMD

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

fet dpak

Abstract: rc motor speed control
Contextual Info: MOTOROLA Order this document by MTD20P06HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET DPAK for Surface Mount Designer's MTD20P06HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS on = 175 MΩ

MGF0919A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm

418C

Abstract: AN569 MTB4N80E1
Contextual Info: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate

radioactivity

Contextual Info: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME Over Voltage Protection Controller with Internal FET MODEL NAME BD6044GUL BLOCK DIAGRAM See Figure 1 PACKAGE DIMENSIONS See Figure 2 FEATURES ●Overvoltage Protection up to 36V ●Internal Low Ron 125m FET

AN569

Abstract: MTD12N06EZL SMD310 Zener Diode SOD-123, 6v
Contextual Info: MOTOROLA Order this document by MTD12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET DPAK for Surface Mount or Insertion Mount Designer's MTD12N06EZL TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM N–Channel Enhancement–Mode Silicon Gate

0951P

Abstract: MGF0951P 60Ghz mitsubishi mgf
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm