FET MARKING Search Results

MTM86627

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: 2.7V to 5.5V, 3A 1ch Synchronous Buck Converter integrated FET BD8962MUV Key Specifications  Input voltage range:  Output voltage range:  Average output Current:  Switching frequency:  Highside FET ON resistance:  Lowsaide FET ON resistance:

Contextual Info: 4.5V to 5.5V, 2.0A 1ch Synchronous Buck Converter Integrated FET BD8961NV Key Specification  Input voltage range:  Output voltage range:  Output current:  Switching frequency:  Pch FET ON resistance:  Nch FET ON resistance:  Standby current:

Contextual Info: 4.0V to 5.5V, 0.8A 1ch Synchronous Buck Converter integrated FET BD8966FVM Key Specifications  Input voltage range:  Output voltage range:  Output current:  Switching frequency:  Pch FET ON resistance:  Nch FET ON resistance:  Standby current:

Contextual Info: Datasheet 2.5V to 5.5V, 0.3A 1ch Synchronous Buck Converter integrated FET BD9122GUL Key Specifications  Input voltage range:  Output voltage range:  Output current:  Switching frequency:  Pch FET ON resistance:  Nch FET ON resistance:  Standby current:

SMD CODE MARKING s7 SOT23

Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes

Contextual Info: 2.7V to 5.5V, 2.0A 1ch Synchronous Buck Converter Integrated FET BD8960NV Key Specifications  Input voltage range:  Output voltage range:  Output current:  Switching frequency:  Pch FET ON resistance:  Nch FET ON resistance:  Standby current:

NE5520379A

Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE5510179A

Abstract: NE5510179A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

NE5520379A

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE5500179A

Abstract: ldmos nec
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

ENN8366

Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Contextual Info: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

application notes

Contextual Info: APPLICATION NOTES APPLICATION NOTES I. PACKAGED FETs and MODULES A. Handling Precautions B. Circuit Installation C. Package Markings II. FET CHIPS A. Removal of GaAs FET and HEMT Chips From Shipping Containers B. Circuit Installation C. Equivalent Circuit

NE5510379A

Abstract: NE5510379A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

BD67891MUV

Abstract: FET DRIVER
Contextual Info: PRODUCTS TYPE PAGE Semiconductor IC BD67891MUV STRUCTURE Silicon monolithic integrated circuits PRODUCT SERIES Level shifter for 3-phase Motor Driver TYPE BD67891MUV FUNCTION ・2 type level shifter 1/4 ・Current limit function ・Direct drive for MOS FET High side: Pch FET, Low side: Nch FET

FG694301

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG694301 is N-P channel dual type small signal MOS FET employed small

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small

TL074

Abstract: TL074 equivalent ic TL074
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL074 LINEAR INTEGRATED CIRCUIT LOW NOISE QUAD J-FET OPERATIONAL AMPLIFIER  DESCRIPTION The UTC TL074 is a high speed J-FET input quad operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic