FET MARKING Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

SMD CODE MARKING s7 SOT23

Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes

NE5520379A

Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE5510179A

Abstract: NE5510179A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

ENN8366

Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
Contextual Info: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

NE5510379A

Abstract: NE5510379A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

FET2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small

TL074

Abstract: TL074 equivalent ic TL074
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TL074 LINEAR INTEGRATED CIRCUIT LOW NOISE QUAD J-FET OPERATIONAL AMPLIFIER  DESCRIPTION The UTC TL074 is a high speed J-FET input quad operational amplifier. It incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic

ic at 1040a

Abstract: 1kW flyback PFC 10kw pfc 24v active clamp forward converter
Contextual Info: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver

Contextual Info: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver

ISL97652

Abstract: ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name
Contextual Info: ISL97652 December 21, 2006 • AVDD boost up to 19.5V OVP threshold , with integrated 2.8APEAK FET • Overvoltage protection (OVP) • 2A integrated AVDD delay FET, with short circuit protection • Dual charge pump controllers for VON and VOFF • VLOGIC buck with integrated 2.5APEAK FET

C10535E

Abstract: MEI-1202 PA505T marking FA fet transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA505T N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 –0.05 • Two source common MOS FET circuits in package the

marking 1a

Abstract: CPH5901 2SC4639 2SK932 82786
Contextual Info: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

fet marking y2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5206 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FL6L5206 is P-channel single type small signal MOS FET with SBD

TA3705

Contextual Info: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting

marking ia

Abstract: uPA602T C10535E MEI-1202 PA602T PA603T
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA602T N-CHANNEL MOS FET 6-PIN 2 CIRCUITS The µPA602T is a mini-mold device provided with two PACKAGE DIMENSIONS (in millimeters) MOS FET circuits. It achieves high-density mounting and • Two MOS FET circuits in package the same size as

Sony 104A

Contextual Info: SGM2014M] SONY. GaAs N-channel Dual Gate MES FET Description Package Outline The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable lor a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers.

FM6L5202

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FM6L5202 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FM6L5202 is N-channel type MOS FET with Schottky Brrier Diode in small

Contextual Info: UC1715-SP www.ti.com SLUSAU8 – MAY 2013 COMPLIMENTARY SWITCH FET DRIVERS Check for Samples: UC1715-SP FEATURES 1 • • • • • • • • • • Single Input PWM and TTL Compatible High Current Power FET Driver, 1-A Source/2-A Sink Auxiliary Output FET Driver,

2SK1824

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS in mm driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and

mosfet L 3055 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET

2SJ243

Abstract: C10535E MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS in mm at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview  Features  Marking Symbol: QK