FET MARKING Search Results

ISL97652

Abstract: ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name
Contextual Info: ISL97652 December 21, 2006 • AVDD boost up to 19.5V OVP threshold , with integrated 2.8APEAK FET • Overvoltage protection (OVP) • 2A integrated AVDD delay FET, with short circuit protection • Dual charge pump controllers for VON and VOFF • VLOGIC buck with integrated 2.5APEAK FET

Contextual Info: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 „ Features „ Marking Symbol : Y2 1.4 1.6

Contextual Info: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features  Marking Symbol Y4 1.4 1.6

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

AT1512

Abstract: AT1512R SSOP20 SSOP-20 VG10 VG20 hemt lnb
Contextual Info: AT1512 Preliminary product Information FET BIAS CONTROLLER AND TONE DETECTION Features Description •Provides bias for GaAs and HEMT FETs •Drives up to 3 FETs with Dynamic FET protection •Regulated negative rail generator requires only 2 external capacitors

AT1504

Abstract: AT1504R SSOP16 surface id4 d
Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors

RD60HUF1-101

Abstract: Rf power transistor mosfet UHF transistor FET 100OHM RD60HUF1 PINw10 transistor A 1568 mitsubishi 250
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD60HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,60W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.

100OHM

Abstract: RD45HMF1 MOSFET "CURRENT source"
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

ECG semiconductor book free

Contextual Info: INA INA121 121 INA 121 FET-Input, Low Power INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION ● LOW BIAS CURRENT: ±4pA ● LOW QUIESCENT CURRENT: ±450µA The INA121 is a FET-input, low power instrumentation amplifier offering excellent accuracy. Its versatile

Contextual Info: Doc No. TT4-EA-14462 Revision. 3 Product Standards MOS FET SK8603160L SK8603160L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 16 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.3 m  (VGS = 4.5 V)

2SK2975

Abstract: MITSUBISHI RF POWER MOS FET GR40-310 139706 t12max GR40-10 0927 TRANSISTOR 40799 17053
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2975 DESCRIPTION 2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING INDEX MARK Dimensions in mm TOP (BOTTOM) FEATURES • High power gain:Gpe≥8.4dB @VDD=9.6V,f=450MHz,Pin=30dBm

Contextual Info: Doc No. TT4-EA-14211 Revision. 4 Product Standards MOS FET SK8603190L SK8603190L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 19 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 10 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14480 Revision. 2 Product Standards MOS FET SK8603170L SK8603170L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 17 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 3.9 m  (VGS = 4.5 V)

Contextual Info: Doc No. TT4-EA-14461 Revision. 3 Product Standards MOS FET SK8603140L SK8603140L Silicon N-channel MOS FET Unit : mm 5.1 For Load-switching / For DC-DC Converter 4.9 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 14 5.9 6.15  Low Drain-source On-state Resistance : RDS on typ = 1.8 m  (VGS = 4.5 V)

2SK2973

Abstract: hd 9729 75458 151821 45980 marking 668 transistor t 2190 transistor marking 551 sot-89 marking c7 sot-89 12089
Contextual Info: MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for OUTLINE DRAWING Dimensions in mm 4.6MAX VHF/UHF power amplifiers applications. 1.5±0.1 1.6±0.2 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17dBm

SNVS629B

Contextual Info: LM5050-1 www.ti.com SNVS629B – MAY 2011 – REVISED JANUARY 2012 LM5050-1 High Side OR-ing FET Controller Check for Samples: LM5050-1 FEATURES DESCRIPTION • The LM5050-1 High Side OR-ing FET Controller operates in conjunction with an external MOSFET as

KGF1312

Abstract: jan 8168 marking HD SOT89
Contextual Info: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0028-38-72 ¡ electronic components KGF1312 ¡ electronic components KGF1312 Power FET Plastic Package Type GENERAL DESCRIPTION The KGF1312, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET

ISL83204A application note

Abstract: bho 270 ISL83204A ISL83204AIBZ ISL83204AIPZ
Contextual Info: ISL83204A Data Sheet March 20, 2007 60V/2.5A Peak, High Frequency Full Bridge FET Driver The ISL83204A is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC and DIP packages. The ISL83204A includes an input

Contextual Info: BUK7610-100B N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

The Japanese Transistor Manual 1981

Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

47146

Abstract: 41146
Contextual Info: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and

Contextual Info: Doc No. TT4-EA-12576 Revision. 3 Product Standards MOS FET FK3303010L FK3303010L Silicon N-channel MOS FET Unit : mm For switching FK350301 in SSSMini3 type package 1.2 0.3 0.13 3 • Features 0.8 1.2  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant

FK350601

Contextual Info: Doc No. TT4-EA-12624 Revision. 3 Product Standards MOS FET FK3506010L FK3506010L Silicon N-channel MOS FET Unit : mm For switching FK330601 in SMini3 type package 2.0 0.3 0.13 3 • Features 1.25 2.1  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant

PS7141L-1C

Abstract: PS7141L-1C-A PS7141L-1C-E3 PS7141L-1C-E3-A PS7141L-1C-E4 NL601 PS7141-1C PS7141-1C-A
Contextual Info: DATA SHEET Solid State Relay OCMOS FET PS7141-1C,PS7141L-1C 8-PIN DIP, 400 V BREAK DOWN VOLTAGE TRANSFER TYPE 2-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7141-1C and PS7141L-1C are transfer type solid state relays containing normally open N.O. contact and