FET J 305 Search Results

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

transistor rf m 9860

Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
Contextual Info: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for

BB3583AM

Contextual Info: j j t v . »v» u s h p . i » > . » i ‘~;' 4 - ' T ' » | PA83 • PA83A APEX MICROTECHNOLOGY CORPORATION « APPLICATIONS HOTLINE 8 0 0 546-AP EX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • LOW BIAS CURRENT, LOW NOISE — FET Input PROTECTED OUTPUT — Thermal Shutoff

Contextual Info: GaAs FET MMIC Products Capability Guide CUSTOM MMIC PRODUCTS — MA4GM400 SERIES DIGITAL STEP ATTENUATORS SWITCHED ELEMENT 0.3 MHz TO 2.0 GHz SWITCHED LINE PHASE SHIFTERS (500 MHz — 2.0 GHz) 1 o— CAN BE SUPPLIED WITH CMOS DRIVERS - o J, ?i ? i i i i

Contextual Info: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power

AD523

Abstract: AD523L AD523K "ultra low Current to Voltage Converter" electrometer AD523J
Contextual Info: PRODUCT DESCRIPTION The Analog Devices A D 523J, A D 523K , and A D 523 L are the first 1C J-FET operational amplifiers to provide sub-picoampere bias current performance comparable to that of discrete component modular products and an order of magnitude improvement over

2N3822 equivalent

Abstract: transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE

UC734

Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
Contextual Info: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA

Contextual Info: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power

2N3823

Abstract: 2N3821UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE

Contextual Info: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power

Contextual Info: EXAR CORP TI 3422618 D E | 3M2Eblfi □ □QM7L.7 S 91D 04767 EXAR CORP XR-U100 Master-Chip Itanslstors Total Components: 577 NPN, small: 94 NPN, 100 mA: 2 J-FET P-channel : 4 PNP, dual collector: 40 PNP, med. vertical: 2 PNP, vertical: 8 Implant Resistors

UC734

Abstract: 2n3452
Contextual Info: N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum lif t •T* 013" 0 737mm Backside Contact: 3,000 A Gold o r ASSEM BLY RECOMMENDATIONS . 01 2 ”_ (0 305mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .

3sk fet

Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Contextual Info: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663

MAX620cpn

Contextual Info: 19-4325, Rev 2; 10/94 y v i y j x i y u i Q uad, H ig h -S id e M O S F E T D riv e rs The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a

cnc schematic

Abstract: 387-M 2sk mosfet
Contextual Info: 2 S K 1 3 8 7 -M S IP M O S F U J I P O W E R M O S -F E T IM-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • L ow on-resistance • No secondary b reakd ow n • Low driving p o w e r • High fo rw ard T ran scon d u ctan ce

sc1142

Abstract: diode zd c56 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A 620 TG On Semi SC1142CSW SC1205 sc1205 application circuit half-bridge sc1205 d-amp sanyo 1500uF 35v capacitor GRM235Y5V226Z010
Contextual Info: S^SEMTECH WA S' 4WMW PRELIMINARY - December 7, 1999 SC1205 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power

IR7811

Abstract: 30BQ015 GRM235Y5V226Z010 SC1405 SC1405TS
Contextual Info: m *A SEMTECH Todby ’ b Results — .1 0 morrow s Visio August 31, 2000 SC1405 hig h s p e e d s y n c h r o n o u s p o w e r MOSFET SMART DRIVER TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal

sc1142

Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power

Contextual Info: H S s E IV IT E C H Wa Today’sResults.tom orrow's Visio August 26, 1999 SC1405 high speed syn c h r o n o u s po w er MOSFET SMART DRIVER T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal

sc1142

Abstract: r14 diode ppy vy 5 fet C33C34 shottkey schematic diagram 3 phase ac drive high speed TTL in fet SC1405 SC1405B SC1405TS
Contextual Info: 3 E |W |T E C H JPy ^ December 16, 1999 HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER SC1405B TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1405B is a Dual-MOSFET Driver with an inter­ nal Overlap Protection Circuit to prevent shoot-through

Contextual Info: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that