FET GEOMETRY Search Results

AN569

Abstract: MTB60N05HDL SMD310
Contextual Info: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N05HDL Motorola Preferred Device TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

AN569

Abstract: MTD20N06HDL SMD310 MTD20N06HDL-D
Contextual Info: MOTOROLA Order this document bt MTD20N06HDL/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD20N06HDL HDTMOS E-FETāā High Density Power FET DPAK for Surface Mount or Insertion Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES

AN569

Abstract: MTB75N03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET. High Density Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM

transistor z3m

Abstract: Z3M IC z3m Transistor Z3M Y
Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM

Contextual Info: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

AN569

Abstract: MTD20P03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS on = 0.099 OHM

AN569

Abstract: MTD20N03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTD20N03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount MTD20N03HDL Designer's Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS on = 0.035 OHM

AN569

Abstract: MTB50P03HDL SMD310 MOSFET sot-143
Contextual Info: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

QT1012

Abstract: AN569 MTD1302 SMD310
Contextual Info: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD1302 HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N–Channel Enhancement Mode Silicon Gate

AN569

Abstract: MTD20N03HDL SMD310
Contextual Info: MOTOROLA Order this document by MTD20N03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Density Power FET DPAK for Surface Mount Designer's MTD20N03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS on = 0.035 OHM

FET J202

Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent 2N4392 2N4393 J112 j112 fet
Contextual Info: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and a

Contextual Info: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N05HDL HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TM O S POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM

Contextual Info: MOTOROLA Order this document by MTB4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB4N80E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate

fet dpak

Abstract: rc motor speed control
Contextual Info: MOTOROLA Order this document by MTD20P06HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET DPAK for Surface Mount Designer's MTD20P06HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS on = 175 MΩ

2N4393

Abstract: FET J202 siliconix fet j112 fet siliconix fet data book pn4117a transistor j201 FET J506 J112 jfet 2n4339
Contextual Info: AN103 The FET Constant-Current Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constant-current source. An adjustable-current source Figure 1 may be built with a FET, a variable resistor, and

Contextual Info: MTD20P03HDL Preferred Device HDTMOS E-FET  High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate http://onsemi.com This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy

siliconix - j201

Abstract: j201 jfet 2N4392 jfet cascade SST4119 2N4341 AN103 J112 J202 SST112
Contextual Info: AN103 Siliconix The FET ConstantĆCurrent Source/Limiter Introduction The combination of low associated operating voltage and high output impedance makes the FET attractive as a constantĆcurrent source. An adjustableĆcurrent source Figure 1 may be built with a FET, a variable resistor,

AN569

Abstract: MTB60N05HDL SMD310
Contextual Info: MOTOROLA Order this document by MTB60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB60N05HDL HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTD12N06EZL SMD310 Zener Diode SOD-123, 6v
Contextual Info: MOTOROLA Order this document by MTD12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET DPAK for Surface Mount or Insertion Mount Designer's MTD12N06EZL TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM N–Channel Enhancement–Mode Silicon Gate

supper mosfets

Abstract: k 351 transistor
Contextual Info: MOTOROLA Order this document by MTD20N03HDUD SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20N03HDL HDTMOS E-FET™ High Density Pow er FET DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand

AN569

Abstract: MTB1N100E SMD310
Contextual Info: MOTOROLA Order this document by MTB1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB1N100E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS on = 9.0 OHM N–Channel Enhancement–Mode Silicon Gate

SOT-323* "power supplies"

Abstract: 2N3904 AN569 MTB15N06E SMD310
Contextual Info: MOTOROLA Order this document by MTB15N06E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB15N06E Motorola Preferred Device TMOS POWER FET 15 AMPERES RDS on = 0.12 OHM 60 VOLTS N–Channel Enhancement–Mode Silicon Gate

PIN CPK

Abstract: AN569 MTB60N06HD SMD310 MTB60N06HD-D
Contextual Info: MOTOROLA Order this document by MTB60N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB60N06HD Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS RDS on = 0.014 OHM N–Channel Enhancement–Mode Silicon Gate

AN569

Abstract: MTB9N25E SMD310
Contextual Info: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB9N25E Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS on = 0.45 OHM N–Channel Enhancement–Mode Silicon Gate