FET DIODE DATE SHEET Search Results

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

K638

Abstract: idm 73
Contextual Info: Philips Components Data sheet status Prelim inary specification date of issue March 1991 BUK638-800A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

PMF3800SN

Abstract: 03ab09
Contextual Info: PMF3800SN N-channel TrenchMOS standard level FET Rev. 01 — 8 February 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PMV65XP

Contextual Info: PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features

PMWD16UN

Contextual Info: PMWD16UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PH7030L

Contextual Info: PH7030L N-channel TrenchMOS logic level FET Rev. 04. — 7 March 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features

15218

Abstract: 15218 pin details SOT323 FET N PMF3800SN
Contextual Info: PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

PH16030L

Contextual Info: PH16030L N-channel TrenchMOS logic level FET Rev. 01 — 24 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PH3120L

Contextual Info: PH3120L N-channel TrenchMOS logic level FET Rev. 02 — 20 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PMV117EN215

Abstract: PMV117EN
Contextual Info: PMV117EN µTrenchMOS enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PMWD20XN

Contextual Info: PMWD20XN Dual N-channel µTrenchMOS extremely low level FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PMWD26UN

Contextual Info: PMWD26UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 19 May 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

PH955L

Contextual Info: PH955L N-channel TrenchMOS logic level FET Rev. 01 — 1 March 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features

PH3855L

Abstract: 03ar86
Contextual Info: PH3855L N-channel TrenchMOS logic level FET Rev. 01 — 26 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PHD78NQ03LT

Abstract: PHP78NQ03LT PHU78NQ03LT
Contextual Info: PHP78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 — 9 June 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

BUK7105-40ATE

Contextual Info: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BF1108_BF1108R

Abstract: BF1108_1108R_3 MARKING CODE CGK BF1108 BF1108R
Contextual Info: BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor FET and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The

PMV117EN

Contextual Info: PMV117EN µTrenchMOS enhanced logic level FET Rev. 02 — 7 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

PH20100S

Abstract: sot669 footprint
Contextual Info: PH20100S N-channel TrenchMOS standard level FET Rev. 02 — 17 August 2004 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.

sot669

Abstract: PH2625L
Contextual Info: PH2625L N-channel TrenchMOS logic level FET Rev. 02 — 24 February 2005 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.

BUK7107-40ATC

Contextual Info: BUK7107-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 6 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK7907-40ATC

Contextual Info: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK9907-40ATC

Contextual Info: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for