FET DATA BOOK Search Results

hitachi fet

Abstract: Hitachi 2SJ fet array 2SJ series
Contextual Info: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E

NES1417B-30

Abstract: nec 1441
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1.7GHz 24±0.3

POUT36

Abstract: NES1821B-30 p1209
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz 24±0.3

BF862

Abstract: marking code 2Ap transistor 2Ap nxp marking code MCD809 MCD815 10102F fet bf862 nxp 102 MCD814
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition frequency for excellent sensitivity in

Contextual Info: PRELIMINARY DATA SHEET_ GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSIONS UNIT: mm DESCRIPTION The NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7

D450 Nchannel

Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
Contextual Info: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE

TC-2303

Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its

NE6500278

Abstract: 10NEC 2410 nec
Contextual Info: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.

sp 0937

Abstract: NEC D 809 F NEC K 2124 NEC D 809 L
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-2E 2 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in KuGate

NEC D 809 F

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input

sn 0716

Abstract: NEC D 587
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1

voice control robot

Abstract: PS7841-A11 PS7841-A15 PS7841-A15-F3 PS7841-A15-F4
Contextual Info: PRELIMINARY DATA SHEET Solid State Relay OCMOS FET PS7841-A11,PS7841-A15 FOR OPTICAL DAA 16-PIN SSOP Optical Coupled MOS FET DESCRIPTION The PS7841-A11 and PS7841-A15 are solid state relays for optical DAA Data Access Arrangement . They have an OCMOS FET, photocoupler, diode bridge and darlington transistor.

NES1417B30

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1,7GHz band. Internal input

NEC 2561

Abstract: 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec NE6501077 nec 0882 p 2 nec 2561 4 pin
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S 17.5 ±0.5

nec 2571 4 pin

Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.

NES2527B-30

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES2527B-30 is power GaAs FET which 24±0.3 provides high output power and high gain in the 2.5 - 2.7 20.4 GHz band.

NEZ1011-4E

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-4E 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-4E is power GaAs FET which provides high gain, high efficiency and high output power in X-band. 8.25 ± 0.15

NE6500496

Abstract: 094-3 MAG
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

SG 2368

Abstract: LS 2027 audio amp c 2688 nec LS 2027 amp
Contextual Info: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION N E76184A is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity. Its

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-2E 2 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N EZ10 1 1-2E is pow er GaAs FET which provides 8.25 +0.15 high gain, high efficiency and high output power in XGate

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band

NEZ1011-8E

Contextual Info: DATA PRODUCT SHEET PRELIMINARY INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-8E is power GaAs FET which provides high 0.5±0.05 1.5 CHAMFER 4 PLACES gain, high efficiency and high output power in Ku-band.

NE85002

Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.