FET D2 PACKAGE Search Results

Contextual Info: MOTOROLA Order this document by MTB75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 75 AMPERES 60 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) T OP VIEW S1 1 D1 6 D1 G2 S2 D1 ID -3.4 (@TC = 25°C) d G1 2 FET 1 D1 D2 5 G2 A D2 D2 3 G1 4 S2 S1 D2 FET 2 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

IRFHS9351

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information HDTMOS E-FET High Density Power FET D 2 p a k for Surface Mount TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

transistor 8522

Contextual Info: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB8N50E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 8.0 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

cr 406 transistor

Abstract: AN569 MTB60N10E7L cr2m TMOS E-FET PD242 s1vb0
Contextual Info: MOTOROLA O rder this docum ent by M TB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET High Energy Power FET D2PAK for Surface Mount TM OS POWER FET 60 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

Contextual Info: D2 PA K PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified

Contextual Info: D2 PA K BUK9640-100A N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB8N50E TMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 8.0 AMPERES 500 VOLTS N-Channel Enhancement-Mode Silicon CBate The D2 PAK package has the capability of housing a larger die

Contextual Info: D2 PA K BUK963R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

TRANSISTOR BH RW

Abstract: step motor em 483
Contextual Info: MOTOROLA Order this document by MTB9N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB9N25E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 9.0 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTB10N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB10N40E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 10 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate

tb7104

Contextual Info: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

Contextual Info: MOTOROLA Order this document by MTB2N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB2N40E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 400 VOLTS N-Channel Enhancement-Mode Silicon Gate

transistor motorola 246

Abstract: TB60N06HD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount M otorola Preferred D evice N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

Contextual Info: MOTOROLA O rder this docum ent by M TB6N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB6N60E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 600 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA O rder this docum ent by M TB60N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB60N06HD HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS R DS on = 0.014 OHM

33N10E

Contextual Info: MOTOROLA O rder this docum ent by M TB33N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate

BUK75

Abstract: BUK764R0-55B
Contextual Info: D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: D2 PA K BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: MOTOROLA O rder this docum ent by M TB75N05HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB75N05HD HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 75 AMPERES 50 VOLTS N-Channel Enhancement-Mode Silicon Gate