MTB60N10E7L Search Results

Contextual Info: MOTOROLA Order this document by MTB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET. High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0.022 W N–Channel Enhancement–Mode Silicon Gate

cr 406 transistor

Abstract: AN569 MTB60N10E7L cr2m TMOS E-FET PD242 s1vb0
Contextual Info: MOTOROLA O rder this docum ent by M TB60N10E7L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTB60N10E7L TMOS E-FET High Energy Power FET D2PAK for Surface Mount TM OS POWER FET 60 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die