TB60N06HD Search Results

Contextual Info: MOTOROLA O rder this docum ent by M TB60N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB60N06HD HDTMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 60 AMPERES 60 VOLTS R DS on = 0.014 OHM

transistor motorola 246

Abstract: TB60N06HD
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TB60N06HD HDTMOS E-FET ™ High Energy Power FET D2PAK for Surface Mount M otorola Preferred D evice N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

MSC1621

Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the