FET CROSS REFERENCE Search Results

LCB114

Abstract: LH136 IL485 ocm246 AC/DC drive PLA114 OCM22A OCMS246 ps7113 OCM243
Contextual Info: 2. OCMOS FET CROSS-REFERENCE 50 GBB-SB-0808 2. OCMOS FET CROSS-REFERENCE 2-1. MATSUSHITA ELECTRIC WORKS MATSUSHITA ELECTRIC WORKS 1 MATSUSHITA ELECTRIC PKG WORKS OUTPUT *1 Type VL IL PT Ron ton/toff (V) (mA) (mW) (Ω) (ms) MAX. MAX. MAX. MAX. MAX. Type Number

JFET

Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

JFET

Abstract: 2N4303 "cross reference" 2n4393 replacement 2N4381 2n4416 jfet J-FET 2N4302 2N4303 2N4304 fet cross reference
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

fet cross reference

Abstract: 2N4381 2N4302 fet 2N4304 JFET 2N5457 P-Channel JFET 2N3823 fet 2N4393 2N4303 2N4119
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Conta Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

fet cross reference

Abstract: 2N4302 2N4381 2N4393 JFET 2N5457 2N3B19 JFET 2N6568 2N4303 2n4416 jfet
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

TRANSISTOR m29

Abstract: MAM124 K 3053 TRANSISTOR
Contextual Info: Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

5558 op amp

Abstract: LH0101CK rets0101 LH0101 LH0101AC LH0101ACK LH0101AK LH0101AK-MIL LH0101C LH0101K
Contextual Info: LH0101 National Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 is a wideband power operational amplifier fea­ turing FET inputs, internal compensation, virtually no cross­ over distortion, and rapid settling time. These features make

RETS0101AK

Abstract: 2266B 5791B HP1-T03-33CB
Contextual Info: LH0101/LH0101A/LH0101AC/LH0101C £ 3 National Semiconductor LH0101/LH0101C, LH0101A/LH0101AC Power Operational Amplifier G eneral Description Features The LH0101 is a wideband power operational amplifier fea­ turing FET Inputs, internal compensation, virtually no cross­

HMF06300

Contextual Info: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates

Contextual Info: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

Contextual Info: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

BB305CEW

Abstract: 1SV70 BB305C
Contextual Info: BB305C Built in Biasing Circuit MOS FET IC VHF RF Amplifier REJ03G0828-0600 Previous ADE-208-608D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

1SV70

Abstract: BB305M
Contextual Info: BB305M Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier REJ03G0829-0600 Previous ADE-208-607D Rev.6.00 Aug.10.2005 Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics.

3SK319

Abstract: ADE-208-602 DSA003643
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK318

Abstract: 3SK318YB-TL-E 3SK318YB-TL
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 Previous ADE-208-600 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

ADE-208-602

Abstract: 3SK319 3SK319YB-TL-E
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

LH0101 equivalent

Contextual Info: LH0101 3 3 N a t i o n a l mm Semiconductor LH0101 Power Operational Amplifier General Description Features The LH0101 Is a wideband power operational amplifier fea­ turing FET inputs, Internal compensation, virtually no cross­ over distortion, and rapid settling time. These features make

1SV70

Abstract: BB305C Hitachi integrated circuit 1115 DSA003643
Contextual Info: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608D Z 5th. Edition Mar 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

Contextual Info: SAMSUNG ELECTRONICS INC 2 j HARRIS PRODUCT DATA bOE D • 7^^4142 OGllflEb 442 ■ SMGK HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

TM 1628 Datasheet

Abstract: 607D 1SV70 BB305M Hitachi integrated circuit 1115 DSA003643
Contextual Info: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607D Z 5th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)

Hitachi DSA0076

Abstract: 1SV70 BB405M
Contextual Info: BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)

Contextual Info: SAMSUNG ELECTRONICS INC J*j HARRIS LOE D • 7 ^ 4 1 4 2 GGllflMb E3G ■ SHGK HMF-24000 100 -,200 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

"Harris microwave"

Contextual Info: SAMSUNG ELECTRONICS INC S HARRIS bDE D 7 ^ 4 1 4 2 Güllfin E DE HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability