FET CHOPPER Search Results

SMD CODE MARKING s7 SOT23

Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Contextual Info: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes

m8p smd

Abstract: sot-23 MARKING CODE 70.2 fet SMD CODE PACKAGE SOT23 sot-23 MARKING CODE GS PMBF310 Philips fet SOT23 code marking M2P smd marking code MHP smd sot-23 MARKING CODE GS 5 marking 702 sot-23
Contextual Info: 11 SMD F E T ’s SMD® FET’s Description Features Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capaci­ tance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own

sot-23 Marking M6

Abstract: FET marking codes MOSFET P-channel SOT-23 m6 sot-23 pinout bf992 application FET SOT-223 N-Channel fet m90 BFT46 SFs SOT23 6x marking sot-23 p-channel
Contextual Info: SMDFETs DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assem bly cost. The three categories of FET’s each have its own attributes

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Contextual Info: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic

LM103 zener

Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Contextual Info: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-

detector circuit using 741 OP-AMP

Abstract: function generator using LM311 741 opamp ICL8043 741 op-amp as integrator staircase generator dual FET input op-amp LM311 and applications LM311 null LM311
Contextual Info: ICL 8043 O K nnü^O IL Dual Fet Input OpAmp FEATURES GENERAL DESCRIPTION • • • • • The ICL8043 contains two FET input op amps, each similar in performance to the ICL8007. The inputs and outputs are fully short circuit protected, and no latch-up problems exist.

p channel depletion mosfet

Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Contextual Info: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the

Contextual Info: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Mosfet 30A 250V

Abstract: 2SK1277
Contextual Info: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

2SK1276A

Contextual Info: 2SK1276A N-channel MOS-FET F-V Series 250V > Features 0,25Ω 20A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

2SK1277

Contextual Info: 2SK1277 N-channel MOS-FET F-V Series 250V > Features 0,12Ω 30A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

Contextual Info: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

05815A

Abstract: 500V0 2SK1279 UA3000 MOSFET 500V 15A
Contextual Info: 2SK1279 N-channel MOS-FET F-V Series 500V > Features 0,58Ω 15A 125W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

2SK1280

Abstract: MOSFET 500V 18A
Contextual Info: 2SK1280 N-channel MOS-FET F-V Series 500V > Features 0,5Ω 18A 150W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

mosfet 500v 10A

Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit

PHM8001

Abstract: phm8
Contextual Info: MOSFET MODULE PHM8001 Single 800A /150V OUTLINE DRAWING FEATURES * Trench Gate MOS FET Module * Super Low Rds ON 1.4 milliohms( @800A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g

PHM5601

Abstract: 560a D280A 280A
Contextual Info: MOSFET MODULE PHM5601 Single 560A /150V OUTLINE DRAWING FEATURES * Trench Gate MOS FET Module * Super Low Rds ON 2 milliohms( @560A ) * With Fast Recovery Source-Drain Diode Circuit TYPICAL APPLICATIONS * Chopper Control For FORKLIFTs Approximate Weight : 650g

LM308 replacement

Abstract: LM308 pin configuration lm308 LM308AN LM308D lm308j 14 pin LM308h LM308AJ replacement LM108A LM108AH
Contextual Info: LM108/A, LM308/A LM108/A, LM308/A Super-Beta Operational Amplifier GENERAL DESCRIPTION FEATURES These differential input, precision am plifiers provide low input currents and offset voltages com parable to FET and chopper stabilized am plifiers. They feature low power

2N4393

Abstract: 2N4393 DIE CHIP cp206 GEOMETRY 2N4391 2N4391 ADAM transistor 2n4391 2N4392 CMPF4391 CMPF4392
Contextual Info: CP206 PROCESS Central Small Signal Transistors TM Semiconductor Corp. N - Channel Switch/Chopper J FET Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21 x 18 MILS Die Thickness 8.0 MILS Drain Bonding Pad Area 3.8 X 3.8 MILS Source Bonding Pad Area

Contextual Info: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV

2SC2911S

Abstract: 2SA1209S transistor tr31 stk750 2SC2274F
Contextual Info: Ordering number : ENN4421 Thick Film Hybrid IC STK750-010 Chopper Regulator using MOS FET with Multi-Scan Support 1 A Output Current unit: mm 4136 [STK750-010] 46.6 3.6 • Multi-scan supporting CRT displays (secondary voltage variable regulator) 1 15 2.0

ICL8043CJE

Abstract: detector circuit using 741 OP-AMP staircase generator ICL8043CPE ICL 8007 C ICL8043 LM311 null LM311 lm311 OP-AMP OPAMP LM311
Contextual Info: ICL 8043 O K nnü^O IL Dual Fet Input OpAmp FEATURES GENERAL DESCRIPTION • • • • • The ICL8043 co n ta in s tw o FET in p u t op am ps, each sim ila r in pe rform ance to the ICL8007. The inpu ts and o u tp u ts are fu lly s h o rt c irc u it protected, and no la tch -u p problem s exist.

Contextual Info: F U J I eujM ^u'udJiá 2S K 1279 N-channel MOS-FET F-V Series 500V 0,58Q 15A 125W > Outline Drawing > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Equivalent Circuit > Maximum Ratings and Characteristics