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    FET AMPLIFIER Search Results

    FET AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HA2-2541-2
    		Rochester Electronics LLC HA2-2541 - Operational Amplifier PDF Buy
    LM759H/B
    		Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy
    LM759CH
    		Rochester Electronics LLC LM759 - Power Operational Amplifier, MBCY8 PDF Buy
    LM1536J/883
    		Rochester Electronics LLC LM1536 - Operational Amplifier - Dual marked (7800304PA) PDF Buy
    LM108AL
    		Rochester Electronics LLC LM108 - Super Gain Op Amp PDF Buy

    FET AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IL062

    Abstract: IL062N TL062C IL062D il0621
    Contextual Info: TECHNICAL DATA IL062 Low Power J-FET DUAL OPERATIONAL AMPLIFIERS The IL062 is high speed J-FET input dual operational amplifier. This J-FET input operational amplifier incorporates well matched, high voltage J-FET and bipolar transistors in a monolithic integrated circuit.


    Original     		IL062 IL062 012AA) IL062N TL062C IL062D il0621 PDF

    TLO84

    Abstract: TLO84C tl0b4c tl 0841 TL084MGC TL084M TL0848 TL064AC TL064BC TL064IDP
    Contextual Info: THOMSON SEMICONDUCTORS TL084 TL084A TL084B J-FET IN PU T Q U A D OP-AM Ps J-FET INPUT Q U A D OP-AM Ps The TL0B4, TL084A and TL084B are high speed J-FET input quad operational amplifiers incorporating well matched, high voltage J-FET and bipolar transistors


    OCR Scan     		TL084 TL084A TL084B TL084, TL084A TL084B ILLR54 LU84A CB-511 TLO84 TLO84C tl0b4c tl 0841 TL084MGC TL084M TL0848 TL064AC TL064BC TL064IDP PDF

    amplifiers

    Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers
    Contextual Info: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers


    OCR Scan     		PDF

    GSO 69

    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)


    OCR Scan     		MGFC36V6472A MGFC36V6472A 45dBc Item-01 Item-51 GSO 69 PDF

    Nec K 872

    Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.


    Original     		NE85001 NE8500199 NE8500100 NE8500100 Nec K 872 NE8500100-RG NE8500100-WB PDF

    NEC 1357

    Abstract: Nec K 872
    Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.


    OCR Scan     		NE85001 NE8500199 NE8500100 NE8500100 NEC 1357 Nec K 872 PDF

    12api

    Abstract: 251C MGFC36V5964A
    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically


    OCR Scan     		FC36V5964A MGFC36V5964A 45dBc ltem-01 10MHz" 12api 251C PDF

    FET differential amplifier circuit

    Abstract: fet differential amplifier schematic DC bias of gaas FET
    Contextual Info: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)


    OCR Scan     		PDF

    MGFC36V7177A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V7177A 7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V7177A MGFC36V7177A 25dBm 10MHz June/2004 PDF

    MGFC36V3742A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V3742A MGFC36V3742A 25dBm 10MHz June/2004 PDF

    MGFC39V7177A

    Abstract: 71F71
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7177A 7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V7177A MGFC39V7177A 28dBm 10MHz June/2004 71F71 PDF

    MGFC36V3742A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V3742A MGFC36V3742A 25dBm 10MHz PDF

    MGFC39V7785A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V7785A 7.7 ~ 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V7785A MGFC39V7785A 28dBm 10MHz PDF

    MGFC36V3436

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3436 3.4 ~ 3.6GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V3436 MGFC36V3436 25dBm Oct-03 PDF

    Band Power GaAs FET

    Abstract: 16621 high power FET transistor s-parameters MGFS45A2527B
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45A2527B 2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45A2527B is an internally impedance-matched GaAs power FET especially designed for use in 2.5 - 2.7 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFS45A2527B MGFS45A2527B Band Power GaAs FET 16621 high power FET transistor s-parameters PDF

    MGFC39V5964A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V5964A MGFC39V5964A 28dBm 10MHz June/2004 PDF

    MGFC39V3436

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V3436 MGFC39V3436 28dBm Oct-03 PDF

    MGFS45V2123A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFS45V2123A MGFS45V2123A 079MIN. 25deg PDF

    MGFC42V7785A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004 PDF

    MGFC36V4450A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V4450A MGFC36V4450A 25dBm 10MHz PDF

    MGFC39V3742A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V3742A MGFC39V3742A 28dBm 10MHz PDF

    MGFC36V4450A

    Abstract: MGFC36V4450
    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC36V4450A MGFC36V4450A 25dBm 10MHz June/2004 MGFC36V4450 PDF

    MGFL45V1920A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL45V1920A 1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFL45V1920A is an internally impedance-matched GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFL45V1920A MGFL45V1920A PDF

    MGFC39V3742A

    Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original     		MGFC39V3742A MGFC39V3742A 28dBm 10MHz June/2004 PDF