FET 913 Search Results

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

63000-000

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> | M G F0906B | _ L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. I S Unit: millimeters 17.5 FEATURES

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a

mgf*1412

Abstract: MGF1412 MGF1412B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1412B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ fiers. The hermetically sealed metal-ceramic package as­ sures minimum parasitic losses, and has a configuration

Contextual Info: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ U n i t : m i l l i m e t e r s inches

12QHz

Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
Contextual Info: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium

cha 0438

Contextual Info: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 2 B low-rtoise GaAs FET w ith an N -ch an nel S ch o ttk y g ate is designed fo r use in S to X band am pli­ fiers and oscillators. Th e herm etically sealed m etalceram ic

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

GaAs FET HEMT Chips

Abstract: 2064 fet FLK017XP DIE CHIP 51 FET
Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

BD91361MUV

Abstract: D9136 Equivalence transistor GRM32EB11A226KE20 MCR03 VQFN020V4040 bd91
Contextual Info: Single-chip Type with Built-in FET Switching Regulators Output 2A More High-efficiency Step-down Switching Regulator with Built-in Power MOS FET BD91361MUV No.10027EAT44 ●Description ROHM’s high efficiency step-down switching regulator BD91361MUV is a power supply designed to produce a low voltage

NEC D288

Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

FLC081XP

Contextual Info: FLC081XP Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iacjç| = 31.5%(Typ.) Proven Reliability DESCRIPTION The FLC081XP chip is a power GaAs FET that is designed for general

GaAs FET HEMT Chips

Abstract: NF 841 FSX027X
Contextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

GaAs FET HEMT Chips

Contextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

Contextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

GaAs FET HEMT Chips

Abstract: NF 841 12GHz FSX027X
Contextual Info: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.