FET 748 Search Results

Contextual Info: h i UC1714/5 UC2714/5 UC3714/5 U N IT R D D E Complementary Switch FET Drivers FEATURES DESCRIPTION • Single Input PWM and TTL Compatible • High Current Power FET Driver, 1.OA Source/2A Sink • Auxiliary Output FET Driver, 0.5A Source/1 A Sink • Time Delays Between Power and Auxiliary Outputs

HIP4080 CLASS D

Abstract: AN9324 HIP4080 HIP4080A microstepping Harris Semiconductor hip4080 HIP4081 HIP4081 amplifier circuit diagram class D HIP4080IB HIP4080IP
Contextual Info: HIP4080 S E M I C O N D U C T O R 80V/2.5A Peak, High Frequency Full Bridge FET Driver December 1996 Features Description • Drives N-Channel FET Full Bridge Including High Side Chop Capability The HIP4080 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC and

XP132A01A0SR

Contextual Info: Power MOS FET ◆P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance: 0.105Ω max ●Cellular and portable phones ●On-board power supplies ◆Ultra High-Speed Switching ●Li-ion battery systems ◆SOP-8 Package

cha 0438

Contextual Info: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 2 B low-rtoise GaAs FET w ith an N -ch an nel S ch o ttk y g ate is designed fo r use in S to X band am pli­ fiers and oscillators. Th e herm etically sealed m etalceram ic

PMF370XN

Contextual Info: PMF370XN N-channel µTrenchMOS extremely low level FET Rev. 02 — 6 December 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features

J103 transistor

Abstract: transistor c223
Contextual Info: PTFB072707FH Thermally-Enhanced High Power RF LDMOS FET 270 W, 28 V, 728 – 768 MHz Description The PTFB072707FH is a LDMOS FET intended for use in multistandard cellular power amplifier applications. Features include input and output matching, high gain and thermally-enhanced

Contextual Info: L I TT ON I N D / L I T T O N SO LI D SbE D Litton • 5 5 4 4 S D D O O D G S l b ITT « L I T T M edium Power M icrow ave GaAs FET Electron Devices D-3807 Preliminary Specifications Lett Side FET Right Side FET FEATURES ■ Output Power 25 ■ 1dB Power Gain 10 dB @ 8 g h z

Contextual Info: Active FET Probe P6205 Data Sheet Active FET Probes for TekProbe BNC Interface The P6205 probe is part of Tektronix' line of Low Circuit Loading Signal Acquisition probes for CSA Communications Signal Analyzers , DSA (Digitizing Signal Analyzers), 11000 Series and the TDS family of

GaAs FET HEMT Chips

Abstract: 876 fujitsu fet general
Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is

Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is

FLK207XV

Abstract: GaAs FET chip
Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is

Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is

FLK207XV

Abstract: GaAs FET HEMT Chips
Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is

FLK207XV

Contextual Info: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is

Contextual Info: BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 21 May 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 5 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK794R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The

Contextual Info: BUK653R7-30C N-channel TrenchMOS intermediate level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Fujitsu GaAs FET application note

Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was

Contextual Info: BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK624R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK663R5-30C N-channel TrenchMOS intermediate level FET Rev. 02 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

Contextual Info: BUK624R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 17 September 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been

BUK714R1-40BT

Contextual Info: BUK714R1-40BT N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. The