FET 741 Search Results

teledyne philbrick 1020

Abstract: 1421 op TELEDYNE PHILBRICK teledyne 1424 teledyne 1421
Contextual Info: 1421 1424 1425 1426 •WTELECYNE PHILBRICK FET Input High Performance Monolithic Op Amps The 1421, 1424, 1425 and 1426 comprise a group of general purpose, 741 pin-compatible FET op amps with specifications approaching low drift FET modules such as the 1020. For all but the 1424, typical low

NEC Ga FET marking L

Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.

LF13741

Abstract: tl 741 741 adjustable current limiter equivalent diode for R2C Low Drift Peak Detector 92963 lm3333 LF13741N 1011fl 92967
Contextual Info: LF13741 zn National £ i Semiconductor BI-FET I I Technology -LF13741 Monolithic JFET Input Operational Amplifier General Description The LF13741 is a 741 with BI-FET™ input followers on the same die. Familiar operating characteristics—those of a

low noise FET NEC U

Abstract: ym 238
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

NEC Ga FET marking Rf

Abstract: nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

precision threshold detector 741 op amp circuit

Abstract: LF13741 LF13741N smoke detector system schematic diagrams 2n4117 equivalent ZN411 741 gbw smoke detector schematic diagrams LF13741H LF156
Contextual Info: LF13741 CT1 National mtH Semiconductor B I-FET II Technology LF13741 Monolithic JFET Input Operational Amplifier General Description The LF13741 is a 741 with BI-FET^m input followers on the same die. Familiar operating characteristics—those of a 741—with the added advantage of low input bias current

XP132A1545SR

Contextual Info: Power MOS FET ◆P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.045Ω max ●Cellular and portable phones ◆Ultra High-Speed Switching ◆SOP-8 Package ●On-board power supplies ●Li-ion battery systems

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm

AN569

Abstract: MTD10N10EL SMD310
Contextual Info: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM

Contextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A " f C O ^ IflfUUf ^ J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER The TA75071P is a J-FET input low-noise operational amplifier with low input bias and offset current, fast slew rate and wide bandwidth.

Contextual Info: gO Stanford Microdevices Product Description SPF-2076 Stanford M icrodevices’ SPF-2076 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 2-23 GHz, Low Noise PHEMT GaAs FET

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

TA7504P

Abstract: TA75061P TA75061 TA7504
Contextual Info: TA75061P BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER The TA75061P is a J-FET input low-power operational amplifier with low input bias, offset current and a fast slew rate. The TA75061P is pin compatible with the TA7 504P

FLK017XP

Abstract: GaAs FET HEMT Chips
Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

NE42484C

Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

SPF-2076

Abstract: B9DG
Contextual Info: iS Stanford Microdevices Product Description SPF-2076 Stanford M icrodevices’ SPF-2076 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 2-23 GHz, Low Noise PHEMT G a As FET

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

Contextual Info: 3 Stanford Microdevices Product Description SPF-2098 Stanford M icrodevices’ SPF-2098 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 1-23 GHz, Low Noise PHEMT G a As FET

D2504 transistor

Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low

Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for

539 MOTOROLA transistor

Abstract: AN569 MTP10N10EL mosfet transistor 400 volts.100 amperes motorola TL 741
Contextual Info: MOTOROLA Order this document by MTP10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet Logic Level TMOS E-FET. Power Field Effect Transistor Designer's MTP10N10EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS power FET is designed to withstand high

5071P

Abstract: TA7504P TA75071P TA7504
Contextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75071P J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER The TA75071P is a J-FET input low-noise operational amplifier with low input bias and offset current, fast slew rate and wide bandwidth. The TA75071P is pin compatible with the

GaAs FET HEMT Chips

Abstract: 2064 fet FLK017XP DIE CHIP 51 FET
Contextual Info: FLK017XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 8.0dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Drain DESCRIPTION Source Source The FLK017XP chip is a power GaAs FET that is designed for