FET 1000A Search Results

Contextual Info: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

NEDA 1604 6F22

Abstract: buzzer 500Hz Buzzer* 1000hz 9999V NEDA 1604 battery 6f22 Battery Neda 1604 9v buzzer operating manual for NEDA 1604 6F22
Contextual Info: MODELS SA RA AC Current Measuring Range Resolution Accuracy FET Y TIN G 0.00 to 99.99A 100 to 1000A 0.01A 0.1A 1.5% of Reading ± 5cts 50 to 60Hz 2.0% of Reading ± 5cts (50 to 500Hz) 4.5% of Reading ± 5cts (500Hz to 3kHz) 0.00 to 99.99A 100 to 1000A 0.01A

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

Contextual Info: 53504 LATCHING, ISOLATED OUTPUT SOLID STATE POWER CONTROLLERS Features: Applications: • • • • • • • • • Switch Status Output I2T circuit protection with status output SPST, normally open 15A, 20A and 30A Operating Current Power FET output with Low on-state resistance

Contextual Info: 53504 Series LATCHING, ISOLATED OUTPUT SOLID STATE POWER CONTROLLERS Features: Applications: • • • • • • • • • Switch Status Output I2 T circuit protection with status output SPST, normally open 15A, 20A and 30A Operating Current Power FET output with Low on-state resistance

AOL1704

Contextual Info: AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in

Contextual Info: 53504 Series LATCHING, ISOLATED OUTPUT SOLID STATE POWER CONTROLLERS Features: Applications: • • • • • • • • • Switch Status Output I2 T circuit protection with status output SPST, normally open 15A, 20A and 30A Operating Current Power FET output with Low on-state resistance

Contextual Info: AOD492 N-Channel Enhancement Mode Field Effect Transistor 1234566576 General Description Features TM SRFET AOD492 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

cots radiation

Abstract: radiation cots
Contextual Info: 53504 Series LATCHING, ISOLATED OUTPUT SOLID STATE POWER CONTROLLERS Features: Applications: • • • • • • • • • Switch Status Output I2 T circuit protection with status output SPST, normally open 15A, 20A and 30A Operating Current Power FET output with Low on-state resistance

Contextual Info: AO4708 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

AOL1702

Contextual Info: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AOD490

Abstract: SRFE transistor free B60100
Contextual Info: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AO4708

Contextual Info: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AOD4110

Abstract: SRFE AOD490
Contextual Info: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

AOL1702

Abstract: SRFE
Contextual Info: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load

Contextual Info: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in

AO4706

Abstract: 24v 5a smps dt1000
Contextual Info: AO4706 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4706/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in

Contextual Info: PRELIMINARY RFJS3006F rGAN-HVTM 650V SSFET With Ultra-Fast Freewheeling Diode The RFJS3006F is a 30A, 650V normally-off sourced switched FET SSFET GaN HEMT providing the same insulated gate ease of use as a power MOSFET or an IGBT, but enabling much higher efficiency at much higher PWM frequencies. The SSFET uses

scr gate driver ic

Abstract: HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet
Contextual Info: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards

HEXFET Power MOSFET Designers Manual

Abstract: "MOS Controlled Thyristors" HEXFET Power MOSFET designer manual mosfet discrete totem pole drive CIRCUIT UC1710 application notes IRFP460 transistor databook UC1770 mosfet discrete totem pole CIRCUIT scr gate driver ic uc1710
Contextual Info: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards

NTC 103AT-2

Abstract: thermistor 103AT-2 BQ25060
Contextual Info: bq25060 www.ti.com SLUSA32 – MAY 2010 1A, Single-Input, Single Cell Li-Ion Battery Charger with 50-mA LDO, and External Power Path Control Check for Samples: bq25060 FEATURES 1 • • • • • • • • • • • DESCRIPTION 30V input Rating, With 10.5V Over-Voltage

BQ25060

Contextual Info: bq25060 www.ti.com SLUSA32 – MAY 2010 1A, Single-Input, Single Cell Li-Ion Battery Charger with 50-mA LDO, and External Power Path Control Check for Samples: bq25060 FEATURES 1 • • • • • • • • • • • DESCRIPTION 30V input Rating, With 10.5V Over-Voltage