FEB04 Search Results

ph74

Abstract: ph71 ph76 ph77 EM78886 EM78808 EM78862C EM78P808 OSCILLATOR 32.768K resistor
Contextual Info: EM78862C 8-Bit Microcontroller Product Specification DOC. VERSION 2.1 ELAN MICROELECTRONICS CORP. July 2005 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation. ELAN and ELAN logo

P3056LD

Abstract: DIODE P3056LD niko P3056LD p3056LD NIKO
Contextual Info: P3056LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

AA SOD323

Abstract: BA592 s21 diode BA892 BA892-02L BA892-02V SC79 SCD80
Contextual Info: BA592/BA892. Silicon RF Switching Diode
For band switching in TV/VTR tuners and mobile applications
Very low forward resistance typ. 0.45  @ 3 mA
small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323

BAR50

Abstract: BAR50-02L BAR50-02V BAR50-03W BAR50-05 SC79
Contextual Info: BAR50. Silicon PIN Diodes
Current-controlled RF resistor for switching and attenuating applications
Frequency range above 10 MHz up to 6 GHz
Especially useful as antenna switch in mobile communication
Very low capacitance at zero volt reverse bias

Contextual Info: BA592/BA892. Silicon RF Switching Diode
For band switching in TV/VTR tuners and mobile applications
Very low forward resistance typ. 0.45  @ 3 mA
small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323

k03h1202

Abstract: P-TO-220-3-34 IKA03N120H2 IKP03N120H2 IN 1612 R DIODE
Contextual Info: IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior

BA892

Abstract: diode ba892
Contextual Info: BA592/BA892. Silicon RF Switching Diode
For band switching in TV/VTR tuners and mobile applications
Very low forward resistance typ. 0.45  @ 3 mA
small capacitance BA592 BA892/-02L BA892-02V 1 2 Type BA592 BA892 BA892-02L BA892-02V Package SOD323

443-7

Abstract: jrc 4557 jrc 455 NSVS1107
Contextual Info: NSVS1107 Feb-04 JRC SAW FILTER NSVS1107 Application 449.7MHz SAW FILTER Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 50Ω

CMOS RS232 Level Converter to 2.8V

Abstract: AT73C212 cmos camera module cmos sound generator ATMEL 436
Contextual Info: P OWER M ANAGEMENT AT73C212 POWER MANAGEMENT UNIT P RODUCTS FOR M ID -LEVEL M ULTIMEDIA M ODULES Integrates in a single IC the power management circuitry for camera and sound sections in feature phones Image: Haz'art Studio l l l 5 independent linear voltage

HDP-22

Contextual Info: 3 4 THIS DRAWING 0 IS C O P Y R IG H T U N P U B L IS H E D . RELEASED 19 BY AMP IN COR POR ATE D. FOR PUBLICATION ALL R IG H T S 2 ,19 LOC R ES ER V ED . GP D IS T : r e v is io n 00 DESCRIPTION L TR RELEASED PER EC 0513-0209-03 DATE DWN APVD 02JAN04 LB

BAR67

Abstract: BAR67-02V SC79
Contextual Info: BAR67. Silicon PIN Diode
For low loss RF switches and attenuators
Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.25 pF
Low forward resistance (typ. 1.5  @ 5mA)
Low harmonics BAR67-02V 1 2 Type BAR67-02V Package

B824 transistor

Abstract: transistor B824 B824 Q62702-B824
Contextual Info: BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration BBY 53

Contextual Info: BAR67. Silicon PIN Diode
For low loss RF switches and attenuators
Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.25 pF
Low forward resistance (typ. 1.5  @ 5mA)
Low harmonics BAR67-02V 1 2 Type BAR67-02V Package

Contextual Info: EM78862C 8-Bit RISC Type Microprocessor Product Specification Doc. Version 1.9 ELAN MICROELECTRONICS CORP. March 2005 Trademark Acknowledgments IBM is a registered trademark and PS/2 is a trademark of IBM. Microsoft, MS, MS-DOS, and Windows are registered trademarks of Microsoft Corporation.

3 POSITION TOGGLE SWITCH 6 pin

Abstract: 15PA90-6W 3 POSITION TOGGLE SWITCH 3 pin 2 POSITION TOGGLE SWITCH 6 pin MIL-S-8805 MIL-PRF-8805 MIL-PRF-8805/98 66AT23-7 momentary switch 04 position
Contextual Info: MICRO SWITCH FHÉ.ÉPORT ILLINOIS a o f d iv is io n FE O . C AT ALOG LISTING T H IS ASSEMBLY TOGGLE SWITCH U S A h o n e y w e ll . M F G . C O O t S lS S t 66A T 23 SERIES D R A W IN G HONEYW ELL ro oI 3 8 8 ± .0 I0 - . 0 9 0 APPROX PULLOUT TO CHANGE POSITION

jrc 3357

Abstract: Jrc 3307 NSVS1075 smd 3407
Contextual Info: NSVS1075 Feb-04 JRC SAW FILTER NSVS1075 Application 320.65MHz SAW FILTER Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 50Ω

NSVS1089

Contextual Info: NSVS1089 Feb-04 JRC SAW FILTER NSVS1089 Application 428MHz Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Input and Output Impedance Nominal Center Frequency (f0)

jrc 324

Abstract: jrc 3240 JRC 2940 jrc 319 NSVS1054 324 jrc
Contextual Info: NSVS1054 Feb-04 JRC SAW FILTER NSVS1054 Application 314MHz SAW FILTER Electrical Specification: Table 1 The device characteristics are measured in the circuit shown in Fig.1. Table 1. Electrical Specifications Item Spec. Input and Output Impedance 50Ω

80if70

Contextual Info: BAR65. Silicon PIN Diode
Series diode for mobile communication in low loss transmit-receiver switches
Band switch for TV-tuners
Very low forward resistance typ. 0.65 @ 5 mA
Low capacitance (typ. 0.5 pF @ 0V)
Fast switching applications BAR65-02L

BAR66

Contextual Info: BAR66. Silicon PIN Diode Array • Surge protection device • Designed for surge overvoltage clamping in antiparallel connection BAR66 3 D 1 D 2 1 2 Type BAR66 Package SOT23 Configuration series LS nH Marking 1.8 PMs Maximum Ratings at TA = 25°C, unless otherwise specified

BAR65-07

Abstract: BAR65 BAR65-02L BAR65-02V BAR65-03W SC79
Contextual Info: BAR65. Silicon PIN Diode
Series diode for mobile communication in low loss transmit-receiver switches
Band switch for TV-tuners
Very low forward resistance typ. 0.65 @ 5 mA
Low capacitance (typ. 0.5 pF @ 0V)
Fast switching applications BAR65-02L

Contextual Info: 2 T H I S DRAWING IS U N P U B L IS H E D . C O P Y RI G H T 2 0 R E L E A S E D FOR P U B L I C A T I O N LOC BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R |3 H T S R E S E R V E D . REV I S I ONS D I ST 00 LTR DE SC R I P T I O N DWN

UB60

Abstract: DELPHI E G S SNAGLESS BOOT
Contextual Info: 2 T H I S DRAWING IS U N P U B L IS H E D . C O P Y RI G H T 2 0 R E L E A S E D FOR P U B L I C A T I O N LOC BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L R |3 H T S R E S E R V E D . REV I S I ONS D I ST 00 LTR DE SC R I P T I O N DWN

H15T120

Contextual Info: IHW15T120 Soft Switching Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications