FEATURE V FETS Search Results
FEATURE V FETS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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UE62B1620021E1 |
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1x1 OSFP cage with EMI enhanced feature | |||
HM2H81P115LF |
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Millipacs Accessories,Shrouds for Type E with locking feature, Press Fit Header,ROHS Compliant | |||
HM2H04P1LF |
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Millipacs Accessories, Shrouds for 25 Pos Rear header with locking feature, Press Fit Header,ROHS Compliant | |||
66564-714LF |
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Quickie® IDC Receptacle, Wire To Board, Double Row, 14 Positions, with Polarizing Feature, 2.54mm (0.100in) Pitch | |||
HM2H04P115LF |
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Millipacs Accessories,Shrouds for 25 Pos Rear header with locking feature, Press Fit Header,ROHS Compliant |
FEATURE V FETS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si3000: 40 V Output Hi-Current H-Bridge Motor Driver Product Feature Sheet Features • Low input voltage range: 3 to 5 V • Wide output voltage range: 5 to 40 V • Bi-directional output drive current: 10 A maximum • PWM ouput driven with 5 V input for |
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Si3000: SI3000 Silicon360 SI2000, 68-lead | |
Contextual Info: J174 TO 177 _/ V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application w ith analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections. |
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BSV78Contextual Info: BSV78 to 80 J V N-CHANNEL FETS Silicon symmetrical n-channel junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for switching applications. The devices have the feature: low 'on' resistance at zero gate voltage. |
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BSV78 BSV78 BSV79 BSV80 v05s1 | |
J175
Abstract: J174 J176 J177
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M89-1045/RC J175 J174 J176 J177 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification. |
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LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape | |
MAX620cpnContextual Info: 19-4325, Rev 2; 10/94 y v i y j x i y u i Q uad, H ig h -S id e M O S F E T D riv e rs The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a |
OCR Scan |
MAX620/MAX621 5fl7bb51 GG1344S MAX620cpn | |
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1G FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Marking Shipping L2SA812QLT1G |
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L2SA812 L2SC1623 L2SA812QLT1G 3000/Tape L2SA812QLT3G 10000/Tape L2SA812RLT1G L2SA812RLT3G | |
"Pin for Pin"
Abstract: 4422 datasheet LT1372 CS5171 CS5171ED8 CS5171GD8 CS5172 CS5172GD8 CS5173 CS5174
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NPFSCS5171/D July-2000 CS5171/2/3/4 CS5171, CS5172, CS5173 CS5174 CS517x r14525 "Pin for Pin" 4422 datasheet LT1372 CS5171 CS5171ED8 CS5171GD8 CS5172 CS5172GD8 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode FEATURE LBAS16HT1G ƽSmall plastic SMD package. ƽContinuous reverse voltage: max. 75 V. ƽHigh-speed switching in hybrid thick and thin-film circuits. 1 ƽPb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION |
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LBAS16HT1G 3000/Tape LBAS16HT3G 10000/Tape | |
ADM1073
Abstract: ADM1073ARU ADM1073ARU-REEL ADM1073ARU-REEL7 EVAL-ADM1073EB EVAL-ADM1073MEB RU-14
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ADM1073 100mV 04488-PrG-001 ADM1073ARU ADM1073ARU-REEL ADM1073ARU-REEL7 EVAL-ADM1073EB EVAL-ADM1073MEB 14-Lead ADM1073 ADM1073ARU ADM1073ARU-REEL ADM1073ARU-REEL7 EVAL-ADM1073EB EVAL-ADM1073MEB RU-14 | |
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Switching Diode FEATURE Pb-Free package is available o MAXIMUM RATINGS TA = 25 C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg |
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LBAS16WT1G SC-70/SOT-323 | |
sck 103 thermistor
Abstract: X3100 sck 084 thermistor data Seven Transistor Array PNP 2N7000 CPH3101 X3101 VCELL12 6v battery overcharge protection
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X3100/X3101 sck 103 thermistor X3100 sck 084 thermistor data Seven Transistor Array PNP 2N7000 CPH3101 X3101 VCELL12 6v battery overcharge protection | |
Contextual Info: APPLICATION NOTE A V A I L A B L E 3 or 4 Cell Li-Ion BATTERY PACKS Preliminary Information X3100 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software selectable safety levels and variable protect detection/release times • Integrated FET Drive Circuitry |
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X3100 | |
sck 103 thermistor
Abstract: X3100 AN142 AN143 BAT54 Si4435 X3100V28 X3101 X3101V28 VCELL12
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X3100/X3101 sck 103 thermistor X3100 AN142 AN143 BAT54 Si4435 X3100V28 X3101 X3101V28 VCELL12 | |
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VcS21
Abstract: X3100 2N3906 2N7002 BAT54 Si4435 X3101 VCELL12
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X3100/X3101 VcS21 X3100 2N3906 2N7002 BAT54 Si4435 X3101 VCELL12 | |
3W11
Abstract: SA51 snubber full bridge
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Contextual Info: MAX IM I N T E G R A T E D P R O D U C T S 41E D • Sfi7bbSl 0 0 0 4 1 ^ 4 fl ■ MXH - f - s z - V '7 >1/1>JXI >2/1 19-4325; Rev 0,7/91 Quad, High-Side MOSFET Drivers The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability. This lockout |
OCR Scan |
MAX620/MAX621 urrent-70 00Q4204 MAX620/MAX621 | |
X3100Contextual Info: A p p l i c a t io n N o t e A V A I L A B L E \ 3 or 4 Cell Li-Ion BATTERY PACKS P relim in ary Inform ation XI €01 X3100 3 or 4 Cell Li-Ion Battery Protection and Monitor IC FEATURE BENEFIT • Software selectable safety levels and variable protect detection/release times |
OCR Scan |
X3100 X3100 | |
Contextual Info: EVALUATION KIT AVAILABLE LE AVAILAB MAX14606/MAX14607 Overvoltage Protectors with Reverse Bias Blocking General Description The MAX14606/MAX14607 overvoltage protection devices feature low 54mI typ on-resistance (RON) internal FETs and protect low-voltage systems against voltage |
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MAX14606/MAX14607 MAX14606/MAX14607 MAX14606) MAX14607) MAX14606 /MAX14607 | |
Contextual Info: EVALUATION KIT AVAILABLE LE AVAILAB MAX14606/MAX14607 Overvoltage Protectors with Reverse Bias Blocking General Description The MAX14606/MAX14607 overvoltage protection devices feature low 54mI typ on-resistance (RON) internal FETs and protect low-voltage systems against voltage |
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MAX14606/MAX14607 MAX14606/MAX14607 MAX14606) MAX14607) MAX14606 /MAX14607 | |
MAX14607EWL
Abstract: wireless charger MAX14606EWL MAX14607 W91B1 5
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MAX14606 MAX14607 MAX14606/MAX14607 MAX14606) MAX14607) /MAX14607 MAX14607EWL wireless charger MAX14606EWL MAX14607 W91B1 5 | |
Contextual Info: EVALUATION KIT AVAILABLE MAX14606/MAX14607 Overvoltage Protectors with Reverse Bias Blocking General Description The MAX14606/MAX14607 overvoltage protection devices feature low 54mI typ on-resistance (RON) internal FETs and protect low-voltage systems against voltage |
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MAX14606/MAX14607 MAX14606/MAX14607 MAX14606) MAX14607) MAX14606 /MAX14607 | |
MAX6880Contextual Info: 19-3772; Rev 1; 10/05 Dual-/Triple-Voltage, Power-Supply Sequencers/Supervisors Applications Multivoltage Systems Networking Systems Telecom ♦ Capacitor-Adjustable Power-Up Sequencing Delay ♦ Internal Charge Pumps to Enhance External n-Channel FETs ♦ Capacitor-Adjustable Timeout Period Power-Good |
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MAX6880/MAX6882) 24-Pin 16-Pin MAX6880ETG+ MAX6880â MAX6883 MAX6880 | |
MAX6880
Abstract: MAX6880ETG MAX6881ETE MAX6882ETE MAX6883 MAX6883ETE
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MAX6880/MAX6882) 24-Pin 16-Pin MAX6880ETG+ T2444-4 MAX6881ETE+ MAX6880 MAX6883 MAX6880ETG MAX6881ETE MAX6882ETE MAX6883 MAX6883ETE |