L2SA812 Search Results

M6 SOT23-3

Abstract: L2SA812QLT1 L2SA812QLT1G L2SA812RLT1 L2SA812RLT1G L2SA812SLT1 L2SA812SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1 FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Marking Shipping M8 3000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1G FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION 2 Marking Shipping L2SA812QLT1G

L2SC1623QLT1

Abstract: L2SC1623QLT1G L2SC1623RLT1 L2SC1623RLT1G L2SC1623SLT1 L2SC1623SLT1G sot-23 Marking l7
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SC1623*LT1 ƽHigh Voltage: VCEO = 50 V. ƽEpitaxial planar type. 3 ƽPNP complement: L2SA812 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Shipping L5 3000/Tape&Reel

L2SA812QLT1G

Abstract: L2SA812RLT1G L2SA812SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION

L2SA812SLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series S-L2SA812QLT1G Series FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 ƽ We declare that the material of product compliance with RoHS requirements.

L2SA812RLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series S-L2SA812QLT1G Series General Purpose Transistors FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. ƽNPN complement: L2SC1623 3 ƽ We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Rating L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V IC

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC807-16LT1 LBC807-25LT1 LBC807-40LT1 3 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –45 V Collector–Base Voltage V CBO –50 V Emitter–Base Voltage