FE3D Search Results

FE3A

Contextual Info: FE3A thru FE3D Glass Passivated Ultrafast Rectifier Case Style G4 0.180 4.6 0.115 (2.9) DIA. 1.0 (25.4) MIN. * d teFeatures n te a P ♦ High temperature metallurgically bonded construction ♦ Cavity-free glass passivated junction ♦ Superfast recovery time for high efficiency

Contextual Info: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage - 50 to 200 Volts Current - 3 .0 Amperes FEATURES ♦ ♦ ♦ ♦ G4 ♦ ♦ ♦ ♦ 1.0 MIN. 25.4 .180 (4,6) .115(2.9) <3 ♦ .300(7.6) MAX. .042 (1.07), .038 (.962) 1.0 MIN. (25.4) Glass passivated cavity-free junction

FE3A

Abstract: FE3C
Contextual Info: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Forward Current - 3.0 Amperes * Reverse Voltage - 50 to 200 Volts E D FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency

Contextual Info: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 3 .0 Amperes FEATURES Case Style G4 ♦ ♦ ♦ ♦ ♦ & 1.0 25.4 MIN. 0.180 (4 .6) 0. 1 15 (2 .9) DIA. ♦ ♦ ♦ ♦ 0.300 ( 7.6) MAX. A High temperature metallurgically bonded construction

FE3A

Abstract: fe3d
Contextual Info: FE3A to FE3D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current -3.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 0.300 {7.6 MAX. High temperature metallurgical^ bonded construction Glass passivated cavity-free junction

FE3A

Contextual Info: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 3.0 Amperes FEATURES Case Style G4 ♦ ♦ ♦ ♦ ♦ ».0 2 5 4 MIN 0 .115 (2 9) DIA ♦ ♦ ♦ ♦ A n . 0.300 (7 6 ) MAX VLJ High temperature metallurgically bonded construction

FE3A

Contextual Info: FE3A thru FE3D Glass Passivated Ultrafast Rectifier * d e t n e t a P Features Case Style G4 • • • • • 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. • • • • 0.300 (7.6) MAX. 0.042 (1.07) High temperature metallurgically bonded construction

FE3A

Abstract: FE3C
Contextual Info: FE3A THRU FE3D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Forward Current - 3.0 Amperes * Reverse Voltage - 50 to 200 Volts E D FEATURES ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Superfast recovery time for high efficiency

Contextual Info: FE3A THRU FE3D GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 3.0 Amperes FEATURES ♦ ♦ ♦ ♦ G4 ♦ ♦ ♦ ♦ 1.0 MIN. 25.4 .180 ( 4 . 6 ) .115 ( 2 . 9 ) ♦ .3 0 0 (7 .6 ) MAX. .042 ( 1 . 0 7 ) .038 (. 9 G 2 ) Glass passivated cavity-free junction

FE3A

Abstract: FE3C
Contextual Info: FE3A thru FE3D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier Case Style G4 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. * d e t n Features e t a P • • • • • • • • • 0.300 (7.6) MAX. 0.042 (1.07)

FE3A

Contextual Info: FE3A thru FE3D Glass Passivated Ultrafast Rectifier * d e t n e t a P Features Case Style G4 • • • • • 1.0 25.4 MIN. 0.180 (4.6) 0.115 (2.9) DIA. • • • • 0.300 (7.6) MAX. 0.042 (1.07) High temperature metallurgically bonded construction

FE3A

Contextual Info: TH97/10561QM FE3A ~ FE3D IATF 0060636 SGS TH07/1033 GLASS PASSIVATED JUNCTION SUPER FAST RECTIFIERS DO-201AD PRV : 50 - 200 Volts Io : 3.0 Amperes FEATURES : * * * * * * * TW00/17276EM 1.00 25.4 MIN. 0.21 (5.33) 0.19 (4.82) Glass passivated junction chip

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

8-bit microcontroller 8 pin package

Abstract: ir sensor 0038 TA 7609 0004H F082A
Contextual Info: High-Performance 8-Bit Microcontrollers Z8 Encore! XP F082A Series Product Specification PS022824-0508 Copyright 2008 by Zilog®, Inc. All rights reserved. www.zilog.com Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY ZILOG'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

12v to 230v inverters circuit diagrams

Abstract: 800 kva inverter circuit diagrams IR2112 application note IGBT inverter calculation 10n60rufd 12V 230V Inverter Diagram for IGBT PC817 example circuits 800 kva inverter diagrams IR2112 equivalent pc817 application note
Contextual Info: Application Note 9017 June, 2001 Manufacturing Technology of a Small Capacity Inverter Using a Fairchild IGBT by Kee Ju Um, Yeong Joo Kim CONTENTS 1. 2. How to choose gate resistance .2

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ADP1047-300-EVALZ

Abstract: Analog Devices DIODE 1334 smd diode 1334 DIODE+1334+smd 1334 diode SMD B4H 3H DIODE smd
Contextual Info: ADP1047 300 Watt Evaluation Kit ADP1047-300-EVALZ PRD 1334 FEATURES Boost PFC topology providing high power factor and low THD Protection features for AC line input and high voltage output High efficiency I2C serial interface to PC Software GUI Programmable digital filters

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

8YV27-200

Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
Contextual Info: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50