FE MARKING CODE Search Results

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

marking 724 diode

Abstract: sot-23 MARKING CODE 21 SB411D
Contextual Info: SB411D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FE Absolute Maximum Ratings Ta = 25OC

sot-23 MARKING CODE 21

Abstract: marking code fe SB41-1
Contextual Info: SB411D SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for low power rectification and switching power supply Features • Small surface mounting type. • High reliability. 3 2 1 SOT-23 Plastic Package Marking Marking Code: FE Absolute Maximum Ratings Ta = 25OC

Contextual Info: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code

Contextual Info: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE POWER TYPE RESISTORS ∅D 1 Resistive body Metal Oxide composition 2 Inner electrode silver layer 3 End cap Fe (Ni or Sn plated) Lc L IDENTIFICATION TYPE BODY COLOR MARKING

transistor marking 19P

Abstract: transistor wae
Contextual Info: BFQ 19P NPN Silicon RF Transistor • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S Type Marking Ordering code tape and reel Package BFQ 19P FE Q 62702- F 1 060

noise suppressor cap

Contextual Info: RESISTORS RESISTORS CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE ∅D Lc 1 2 3 Resistive body Metal Oxide composition Inner electrode silver layer End cap Fe (Ni or Sn plated) L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1K CPCN 5K CPCN 10K Green* Red* Purple*

Marking Code 2F

Abstract: 250-600
Contextual Info: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300

Contextual Info: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW CERAMIC NOISE SUPPRESSOR CPCN ∅D 1 Resistive body Metal Oxide composition 2 Inner electrode silver layer 3 End cap Fe (Ni or Sn plated) Lc L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1K CPCN 5K CPCN 10K Green*

motorbike

Abstract: noise suppressor
Contextual Info: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE ∅D 1 Resistive body Metal Oxide composition 2 Inner electrode silver layer 3 End cap Fe (Ni or Sn plated) Lc L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1K CPCN 5K CPCN 10K

noise suppressor cap

Contextual Info: RESISTORS RESISTORS CERAMIC NOISE SUPPRESSOR CPCN STRUCTURE ∅D Lc 1 2 3 Resistive body Metal Oxide composition Inner electrode silver layer End cap Fe (Ni or Sn plated) L IDENTIFICATION TYPE BODY COLOR MARKING CPCN 1kΩ CPCN 5kΩ CPCN 10kΩ Green* Red*

Contextual Info: BSS 100 In fin e o n taehnologifts SIPMOS Small-Slgnal Transistor • N channel • Enhancement mode • Logic Level *V'GS th = 0.8.2.0V Type Vbs fe f l DS(on) Package Marking BSS 100 100 V 0.22 A 6Í2 TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code

Contextual Info: BSP 295 In fin e o n t«e h n o l o g i i t SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level * ‘'GS th = °-8 -20V Vbs fe BSP 295 50 V 1.8 A Type BSP 295 Ordering Code Q67000-S066 Type WDS(on) Package Marking 0.3 i l

DIODE S2v 73

Abstract: DIODE in s2v shindengen rectifier SHINDENGEN DIODE DIODE S2v 50 DIODE S2v S2V60
Contextual Info: -A S æ fE ^ *-K 7 Rectifier Diode Axial Diode OUTLINE DIMENSIONS S2V Case : 1.0 <f> Um l ; mm W e ig h t : 69g 24 MIS *4 8"“ , 73 1 600V 1.7A llfg M ° M > © _ Marking ffl C o lo r code, Cathode band i í • -B- © CD •M W Œ Red : S2V20 îj w

MTA-100

Contextual Info: 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 6 5 4 3 2 PUBLICATION RIGHTS LOC RESERVED. D IS T 00 CM BY TYCO ELECTRONICS CORPORATION. / \ MATERIAL: SOLDER cr D ALTERNATE CONFIGURATION P R E FE RR E D CONFIGURATION POSSIBLE MARKING

DIODE S3V

Abstract: DIODE S3V 40 DIODE S3V 63 S3V Diode DIODE S3V 7
Contextual Info: r c r — K A x ia l D lo d * Sinote DfecUp ^MytäsOB Avatanche ty « ^ O U T L IN E DIM ENSIONS Cathode Anode S3VDZ 04 .8 M A X 600V 3.5A Color code, Cathode band Blue : S3V60Z Marking 7'<7'svi.& zm S3V 63 ¡.fe Type No. • f-X x Avalanche type (Silver

Contextual Info: BSS 7728 In fin e o n technologies SIPMOS Small-Signal Transistor b • N channel 7 y SX/N. • Enhancement mode • '|/GS(tti = 1-°—2.5V 1 Pin 1 VPS05557 Pin 2 G Pin 3 S Type Vds fe f lDS(on) Package Marking BSS 7728 60 V 0.15 A 7.5 £1 SOT-23 sSJ

A1E transistor

Contextual Info: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107

BCX70RG

Abstract: BCX70RK BCX70RJ
Contextual Info: 4684955 I T T SEMICONDUCTORS ~ fl7 87 D 0 2 3 2 1 D l f | 4 b f l 4 ,i S S G D Q E3S1 S I D NPN TRANSISTORS NPN Silicon Transistors Plastic Package TO-236 Marking Code VcEO h FE at VcEsat at Ices I c/ I b V ce/ I c C0b fT til •5:> Type at at Vce/Ic Vcb

964312-1

Contextual Info: CUSTOMER-PART Ku nde n -Te i I e MATERIAL MARKING Mafer ia lk en nze Ic hn u ng 'SPT ' 4,8mm MALE TERM, SINGLE-WIRE S E A T LOR SET 4 ^ M m \ d C S 2\ 1 . 5 mm \MALE\ T E R M ^ ^ T YCO- PA R T- NO, CONTACT BODY: 4 , 0 0 mmA2 \ \ 964314-1 Grundfeder: Cu Fe

Contextual Info: M O DEL IM C -1 2 1 0 -1 0 0 In d u c to rs S u rfa c e M ount, M olded FE A TU R ES • Molded construction provides superior strength and moisture resistance • Tape and reel packaging for automatic handling, 2000/reel, EIA 481 • Printed marking • Compatible with vapor phase and infrared reflow soldering

Contextual Info: BCR 119W NPN Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R-|=4.7k£2 c FI 4 Tr Type Marking Ordering Code Pin Config uration BCR 119W WKs 1= B Q62702-C2285 Package 2= E 3=C SOT-323

Contextual Info: S IE M E N S BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=22ki2, R2=47kfl ire □ CÜ J S E Ordering Code Pin Configuration WZs Q62702-C2289 1 =B Package H CO ro

IBZ MARKING CODE

Contextual Info: MMBT3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MMBT3906 is recommended. •t lo, Top View "1 Pin configuration 1 = Collector, 2 = Base, 3 = Emitter, Marking code 1N LjA—i—