FDS667 Search Results

FDS6670A

Abstract: SOIC-16
Contextual Info: June 2001 FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior

FDS6676

Contextual Info: FDS6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS6670AS

Abstract: FDS6670A
Contextual Info: FDS6670AS 30V N-Channel PowerTrench“ SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6676AS

Contextual Info: tm FDS6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6670AS

Abstract: FDS6670AS_NL
Contextual Info: tm FDS6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

d7566

Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

FDS6673AZ

Contextual Info: FDS6673AZ 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

FDD6676S

Abstract: FDS6676S
Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6679AZ

Contextual Info: SEM IC O N D U C TO R FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9mQ General Description Features T h is P -C h a n n e l M O S F E T is p rod u cte d u sing Fa irchild S e m ic o n d u c to r’s a d va n ce d P o w e rT re n ch p roce ss th a t has

FDS6676AS

Abstract: FDS6676
Contextual Info: FDS6676AS 30V N-Channel PowerTrench SyncFET Features General Description • 14.5 A, 30 V. RDS ON max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky body diode ■ Low gate charge (45nC typical) ■ High performance trench technology for extremely low

FDS6676AS

Abstract: FDS6676
Contextual Info: tm FDS6676AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: F A IR C H IL D July 1998 S E M IC O N D U C T O R tm FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

Contextual Info: FDS6679 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

Contextual Info: FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

FDS6676S

Abstract: FDS6676
Contextual Info: FDS6676S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6673BZ

Contextual Info: FDS6673BZ P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mΩ General Description Features This P-Channel MOSFET is produced using Fairchild „ Max rDS on = 7.8mΩ, VGS = -10V, ID = -14.5A Semiconductor’s advanced Power Trench process that „ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

FDS6679AZ

Contextual Info: FDS6679AZ P-Channel PowerTrench MOSFET -30V, -13A, 9mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

Contextual Info: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS6675 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features T his P-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to m inimize

CBVK741B019

Abstract: F011 F63TNR F852 FDS6678A FDS9953A L86Z
Contextual Info: FDS6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS6676

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z fairchild NDS
Contextual Info: FDS6676 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS6679Z

Contextual Info: FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.

FDS6675BZ

Contextual Info: FDS6675BZ P-Channel PowerTrench MOSFET tm -30V, -11A, 13mΩ General Description Features This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

CBVK741B019

Abstract: F011 F63TNR F852 FDS6670A FDS6670S FDS9953A L86Z
Contextual Info: FDS6670S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low