FDS MOSFET Search Results

33pf ceramic capacitor

Abstract: capacitor ceramic 33pF sanyo capacitor 680uf 25v 470uF 10v ceramic capacitor, .1uF electrolytic capacitor 470uF 25v 680uf 10MV470HC capacitors ceramic 33pF Electrolytic Capacitor 10V 470uf
Contextual Info: 92% Efficient, 5V to 2.5V, 6A Step-down Converter +4.5V to +5.5V VIN C5-C6 470uF 10V HC C3 1uF 10V X5R R1 910k 5 IN 2 COMP U1 MAX1954 C2 33pF C1 680pF D1 CMPSH-3 1 HSD 10 BST DH C4 0.1uF 9 LX DL PGND L1 3.3uH DO5022P -332HC N1A 1/2 FDS 6990A 8 N1B 1/2 FDS

N-CHANNEL MOSFET 30V 2A SOT-23

Abstract: N2 SOT-23 capacitor 470uf 25v 470uF/ 25V capacitor electrolytic capacitor 470uF 25v 6930A 2N7002 SOT-23 Electrolytic Capacitor 25V 470uf 470uF 25V FAIRCHILD 2N7002
Contextual Info: DVD 12.6V to 15.4V VIN C3 2.2uF 10V C2 0.1uF 9 R1 75k 2 16 VCC 15 VL IN BST COMP C1 2.2nF SHDN D1 CMPSH-3 U1 MAX1967 DH LX DL N2 2N7002 GND C5 390uF 25V MV-AX 14 13 C4 0.1uF N1 1/2 FDS 6930A 12 N1 1/2 FDS 6930A 11 10 L1 22uH CDRH127 -220 3.3V@2A VOUT C6 470uF

capacitor 22uf 10v 1206

Abstract: 2.2uH inductor capacitor 22uF data sheet of resistor 33k inductor 0603 2.2uH LMK432BJ226MM Transistor Mosfet N-Ch 30V DO1813P-222HC FDS8926A JMK325BJ226MN
Contextual Info: Ink jet printer 3.3V INPUT C2 4.7uF 10V X5R 1 ILIM R1 33k 2 D1 CMPSH-3 5 IN BST COMP U1 MAX1953 C1 390pF DH C4 22uF 10V X5R 10 8 C3 0.1uF 9 N1A 1/2 FDS 8926A L1 2.2uH DO1813P -222HC 1.0V@1.5A LX DL PGND 4 GND FB N1B 1/2 FDS 8926A 6 7 3 R2 2.49k R3 10.0k 1953_1v

JMK325BJ226MN

Abstract: DO3316P / 68UH DO3316P-681HC DO3316P FDS6898A LMK316BJ475ML MAX1953 MAX1953EUB 18022
Contextual Info: Base Station 3.0V to 3.6V INPUT 1 R1 82k 2 C4 22uF 6V 2x D1 CMPSH-3 C2 4.7uF 5 IN ILIM BST COMP U1 MAX1953 C1 180pF DH 10 8 C3 0.1uF 9 N1A 1/2 FDS 6898A L1 0.68uH DO3316P -681HC LX DL PGND 4 GND FB N1B 1/2 FDS 6898A 6 7 3 C5 680pF 1.8V@6A C6 22uF 6V (2x)

330PF

Abstract: FDS6930A 6930A BAT54 CDRH4D28 JMK325BJ226MM LMK316BJ475ML MAX1953 MAX1953EUB LX 527
Contextual Info: 4.75V to 5.25V VIN D1 BAT54 C2 4.7uF 10V X5R 1 R1 33k 2 5 IN ILIM BST COMP U1 MAX1953 C1 330pF DH 10 8 9 C3 0.1uF N1A 1/2 FDS 6930A R2 4.7 C4 22uF 6V L1 X5R 1.8uH CDRH4D28 -1R8 1.2V@2.1A VOUT LX DL PGND 4 GND FB N1B 1/2 FDS 6930A 6 7 3 R3 5.11k R5 4.7 C6 22uF

FDS6690

Abstract: 560uF 4V sanyo OS-CON 10SP470M 4SP560M BAT54 EMK107BJ104MA JMK316BJ475ML MAX1954A MAX1954AEUB
Contextual Info: 4.5V to 5.5V VIN C3 4.7uF 6V X5R 5 IN 1 HSD BST R1 100k C1 1nF 2 COMP U1 MAX1954A C2 68pF DH LX DL PGND 4 GND FB 10 D1 BAT54 C5 470uF 10V SP C4 0.1uF C6 22uF 10V X5R N1 FDS 6690 8 9 N2 FDS 6690 6 7 3 L1 2.2uH R4 2.7 C7 1nF R2 5.11k 1.2V @ 6A VOUT C8 560uF

10pf ceramic CAPACITOR

Abstract: MAX1953EUB FDV0630-1R0 ceramic capacitor FDS8926A FDV0630 JMK2126BJ475MG JMK325BJ226MM MAX1953 77A DIODE
Contextual Info: 3.135V to 3.465V INPUT D1 CMPSH-3 C3 4.7uF 1 5 IN ILIM BST 10 R1 30k 2 C1 330pF COMP U1 MAX1953 C2 10pF DH 8 C4 0.1uF N1A 1/2 FDS 8926A 9 C5 22uF 6V X5R 2x L1 1.0uH FDV0630 1.8V@2A LX DL PGND 4 GND FB N1B 1/2 FDS 8926A 6 7 3 R2 12.7k R4 2.7 C6 1.5nF C7 22uF

560pF

Abstract: DO3316P-681HC 40037 22uf R1 27k 6898a 27k capacitor DO3316P FDS6898A LMK316BJ475ML
Contextual Info: 3.135V to 3.465V INPUT D1 CMPSH-3 C2 4.7uF 1 R1 27k 2 5 IN ILIM BST COMP U1 MAX1953 C1 560pF DH C4 22uF 6V 2x 10 8 C3 0.1uF N1A 1/2 FDS 6898A 9 C5 22uF L1 6V (2x) 0.68uH DO3316P -681HC 1.8V@4A LX DL PGND 4 GND FB N1B 1/2 FDS 6898A 6 7 R2 12.7k 3 R4 2.7 C7

0.1uf 25V Electrolytic capacitor

Abstract: 820uf 25V capacitor CAPACITOR 47UF 25V ELECTROLYTIC fds mosfet 680PF 6990a 25SC47M 25V Electrolytic capacitor datasheet capacitor 47uF electrolytic LMK212BJ225MG
Contextual Info: Set top box 10.8V to 13.2V VIN C2 0.1uF C3 2.2uF 10V 4 R1 200k C1 680pF 1 D1 CMPSH-3 3 VCC 5 VL BST IN COMP U1 MAX1967 DH LX DL GND FB C6 47uF 25V SC 10 9 C4 0.1uF 8 L1 15uH DO5022P -153HC N1 1/2 FDS 6990A N1 1/2 FDS 6990A 6 7 2.5V@5A VOUT C7 820uF 6V MV-EXR

6TPE330MIL

Abstract: TRANSISTOR 106 d1 FAIRCHILD 3904 capacitor 106 16v 326 SOT 6982A EMK325BJ106MN MAX8546EUB 326 Transistor CEP125
Contextual Info: 10.8V to 13.2V VIN C9 0.1uF C1 1uF 10V C12 1uF 4 D2 CMPSH-3 R3 10 3 VCC D1 CMPSH-3 5 VL BST IN U1 MAX8546 R4 390k 1 COMP DH Q1 MMBT 3904 R5 10k 10 C5 0.1uF 9 LX GND 6 R8 3 7 N1B 1/2 FDS 6982A L1 7.2uH CEP125 N1A 1/2 FDS 6982A R9 3 3.3V@4A VOUT C8 0.1uF C6

CDRH127-220

Abstract: resistor 2200 ohm electrolytic capacitor 100uF 50v 100uF 35V capacitor MAX8546EUB capacitor 470uf 50v 35MV100AX CDRH127 FDS6930A LMK212BJ225MG
Contextual Info: 8V to 22V VIN C2 0.1uF 50V R1 82k C3 2.2uF 10V 4 3 VCC 5 VL BST IN U1 MAX8546 1 COMP DH 10 C4 0.1uF LX GND 6 L1 22uH CDRH127 -220 N1 1/2 FDS 6930A 9 8 DL C1 6.8nF C5 100uF 35V MV-AX D1 CMPSH-3 R2 4.7 R3 4.7 N1 1/2 FDS 6930A 7 R6 4.7 C7 470uF 10V MV-AX 3.3V@1.2A

7476 datasheet

Abstract: ceramic capacitor 1nF TAIYO YUDEN LMK325BJ106MN 7476 ceramic capacitor ceramic capacitor 22PF 7476 data sheet 40027 datasheet 7476 a 2761
Contextual Info: Base station 4.75V to 5.25V INPUT D1 CMPSH-3 C3 4.7uF 10V X5R 1 R1 62k C1 180pF 2 5 IN ILIM BST COMP U1 MAX1953 C2 22pF DH C5 10uF 10V X5R 2x 10 8 C4 0.1uF N1A 1/2 FDS 8926A 9 L1 1.2uH DO1813P -122HC 3.3V@4A LX DL PGND 4 GND FB N1B 1/2 FDS 8926A 6 7 C6 1nF

capacitor 10uF

Abstract: LMK325BJ106MN DO3316P DO3316P-331HC FDS6898A JMK325BJ226MM MAX1953 MAX1953EUB capacitor 1210 6898a
Contextual Info: Base-Station 3.0V to 3.6V INPUT D1 CMPSH1-4 C3 10uF 1 R1 47k C1 270pF 2 5 IN ILIM BST COMP U1 MAX1953 C2 5pF DH C5 22uF 6V X5R 2x 10 8 C4 0.1uF N1 1/2 FDS 6898A 9 L1 0.33uH DO3316P -331HC LX DL PGND 4 GND FB 7 3 C6 22uF 6V (2x) N1 1/2 FDS 6898A 6 1.5V@6A

IRFP150R

Abstract: IRFP152R J50 mosfet Transistors MBI DC converter 50A 100V IRFP152 IRFP151R IRFP153R S-20 TO247 package dissipation
Contextual Info: _ Rugged Power MOSFETs File Num ber 2015 IRFP150R, IRFP151R, IRFP152R, IRFP153R Avalanche Energy Rated N-Channel Power MOSFETs 33A and 40A, 60V-100V fDs on = 0.0550 and 0.080 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

irf234 n

Abstract: irf*234 n IRF234 irf238 ir1f IRF237 IRF235 IRF236
Contextual Info: Rugged Power M O SFETs_ IRF234, IRF235, IRF236, IRF237 File Number 2208 Avalanche-Energy-Rated N-Channel Power MOSFETs 8.1 A and 6.5 A, 275 V and 250 V fDs on = 0.45 O and 0.68 n N-CHANNEL ENHANCEMENT MODE Feature*: • Single pulse avalanche energy rated

P50N05

Abstract: AN7254 IN5240B RFG50N05
Contextual Info: Power MegaFETs RFG50N05 File Number 2197 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 50 A, 50 V fDs(on) = 0.022 fi IN-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated • SOA is power-dissipation lim ited

MOSFET IRF9630

Abstract: IRF 1630 IRF9630 IRF9631 IRP9 IRF9632 IRFS632 irf98 transistor IRF 630 IRF9633
Contextual Info: Rugged Power M O SFETs_ IRF9630, IRF9631, IRF9632, IRF9633 File Number 2224 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5 A and -6.5 A, -150 V and -2 0 0 V fDs on = 0.8 f i and 1.2 0 TERMINAL DIAGRAM D Features: • Single pulse avalanche energy rated

rectifier diode 1-35 LA V6

Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T
Contextual Info: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated

transistor tic 2260

Abstract: tic 2260 F050 MARKING MARKING W1 AD CBVK741B019 F63TNR FDS8433A FDS9953A L86Z SO-8 marking 0609
Contextual Info: =M l C O N D U C T O R tm FDSÔ433A Single P-Channel 2.5V Specified MOSFET General Description Features This P-Channel enhancement mode power field effect • -5 A, -20 V. R,D S fon ' : 0.045 S i @ VGS = -4.5 V transistors is produced using Fairchild’s proprietary,

IRF9150

Abstract: IRF9151 IRF150 SCVIRFP9150CF1 MOSFET IRF150
Contextual Info: Rugged Power MOSFETs File Num ber IRF9150, IRF9151 2280 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors 25 A, 60 V and 100 V P-CHANNEL ENHANCEMENT MODE fDS on = 0 .1 5 0 Q Features: • SOA is pow er-dissipation lim ite d

Contextual Info: 2N6661J AN/JANTX/J ANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) 90 fDS(on) Max ( Q ) v GS(th) ( V ) Id (A) 0 .8 to 2 0 .8 6 4 e vGS = io v FEATURES BENEFITS APPLICATIONS • • • • • • • Guaranteed Reliability

25AF 8 PINS

Contextual Info: ta o a a v i oos3i s 3 dhb • _ _ _ _ _ _ has IRF360 IRF362 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Features Package T 0 -2 0 4 A E • 25A and 22A, 400V BOTTOM VIEW • fDS on = 0 .2 0 ÎÎ and 0.25f2 • Single Pulse Avalanche Energy Rated

Contextual Info: Tem ic SÌ9902DY S e m i co n d u c t o r s Asymmetrical Dual N-Channel Enhancement-Mode MOSFET Product Summary fDS on ( ^ ) I d (A) 0.07 @ VGs = 4.5 V ± 3 .0 0.09 @ VGs = 2.5 V ±2.1 0.03 @ VGS = 4.5 V ±6.9 0.035 @ VGs = 2.5 V ± 4.9 V d s (V) N-Channel 1

Contextual Info: SÌ9928DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary V d s (V ) N-Channel 20 P-Channel I d (A ) fDS(on) ( ß ) -2 0 0.05 @ VGS = 4.5 V ± 5 .0 0.06 @ VGs = 3.0 V ± 4 .2 0.08 @ VGs = 2.7 V ± 3 .6 0.11 @ VGs = -4 -5 V ± 3 .4 0.15 @ V GS = - 3 .0 V