L16V Search Results

GALI6V8

Abstract: FZJ 101 16V8AS 1J44-140 16V8A FZJ 165 16H8 GAL16V8AS-12HB1 2184b 10L8
Contextual Info: ¿ T # SGS-THOMSON G A L16V 8A S E2PROM CMOS PROGRAMMABLE LOGIC DEVICE HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 10ns maximum propagation delay L16V8AS-1 Oxxx - Fmax = 62.5MHz - 7ns max. from clock input to data output - TTL compatible 24mA outputs

similar ic book

Contextual Info: LATTICE SE MICONDUCTOR böE D Bi SBÖbTHT ÜGG5753 S5T « L A T Lattice G A L16V8Z G A L16V8ZD Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • ZERO POWER E’ CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on L16V8Z

Contextual Info: •■■ ■■■ Lattice FEATURES L16V8C High Performance E2CMOS PLD Generic Array Logic FUNCTIONAL BLOCK DIAGRAM • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maxim um Propagation Delay — Fmax = 1 6 6 MHz — 4 ns Maxim um from Clock Input to Data Output

fan1587a33

Abstract: FAN1587A FAN1587AM FAN1587AMC FAN1587AT FAN1587AM33 FAN1587AD
Contextual Info: www.fairchildsemi.com FAN1587A 3A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The FAN1587A, FAN1587A-1.5, and FAN1587A-3.3 are low dropout three-terminal regulators with 3A output current capability. These devices have been optimized for low voltage

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

gal 16v8 programming algorithm

Abstract: gal programming algorithm GAL programming Guide GAL16V8QS TAT 2159 opal 16V8A 16V8Q 16V8QS gal programming specification
Contextual Info: Semiconductor L16V8QS-10L, -15L 20-Pin 0.8jli EEC M O S PLD s General Description Features Th e EECM OS G L16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

L16V

Abstract: 16V8Z
Contextual Info: Lattice' L16V8Z L16V8ZD Zero Power E2CMOS PLD FEATURES • ZERO POWER E2CMOS TECHNOLOGY — 100 jA Standby Current — Input Transition Detection on L16V8Z — Dedicated Power-down Pin on L16V8ZD — Input and Output Latching During Power Down • HIGH PERFORMANCE E2CMOS TECHNOLOGY

ispGAL16Z8-25L

Abstract: GAL programming Guide LA1T PAL Decoder 16L8 GAL16V8 T-25 0/ispGAL16Z8
Contextual Info: Lattice Semiconductor is p G A L 1 6 Z 8 In-System Programmable Generic Array Logic Corporation™ U.S. Patents 4.761.768 n d 4766,569 FU N C TIO N AL BLOCK DIA GR A M FEA TU RES • IN-SYSTEM -PROGRAM M ABLE - - 5-VOLT ONLY — Change Logic "On the Fly" In le ss than 1 s

AZM10

Abstract: MC100EL16 MC100LVEL16 MC10EL16 AZ100LVEL16VS AZ100LVEL16VSD AZ100LVEL16VST AZ10LVEL16VS AZ10LVEL16VSD AZ10LVEL16VST
Contextual Info: ARIZONA MICROTEK, INC. L16VS L16VS ECL/PECL Differential Receiver with Variable Output Swing FEATURES • • • • • • 250ps Propagation Delay High Bandwidth Output Transitions Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors

GAL16V8A

Abstract: 14L4 L16V GAL16V8P gal16v8a national semiconductor
Contextual Info: L16V8A Generic Array Logic General Description The N SC E 2C M O S GAL device combines a high per­ formance C M O S process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable

Contextual Info: G A L 1 6 V 8 iilL a ttice • High Performance E2CMOS PLD Generic Array Logic Semiconductor Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 166 MHz — 4 ns Maximum from Clock Input to Data Output

IJP LC 300

Contextual Info: SPV-300 30 DW Single Output w ith FFC F un ction • series F ? a tijr-? s : ' U ffte r e a l A C inp<il : HU ra ng e • B u ih n a t t i^ r F C t in c t o n , iT > a . * ■r nsteetc 13. iaiûrt ù ‘out C vc 'üdd ■ wslat^i : C ve : te-n^i^L t e ■Famed aiioûc .-lg ty btiH+i DC Fan

FAN1587A

Abstract: FAN1587AM FAN1587AMC FAN1587AT
Contextual Info: www.fairchildsemi.com FAN1587A 3A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The FAN1587A, FAN1587A-1.5, and FAN1587A-3.3 are low dropout three-terminal regulators with 3A output current capability. These devices have been optimized for low voltage

FAN1587A

Abstract: FAN1587AD33X FAN1587AM FAN1587AMC FAN1587AT
Contextual Info: www.fairchildsemi.com FAN1587A 3A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The FAN1587A, FAN1587A-1.5, and FAN1587A-3.3 are low dropout three-terminal regulators with 3A output current capability. These devices have been optimized for low voltage

FAN1587A

Contextual Info: www.fairchildsemi.com FAN 1 5 8 7 A 3 A Adjust a ble /Fix e d Low Dropout Line a r Re gula t or Features Description • • • • • • The FAN1587A, FAN1587A-1.5, and FAN1587A-3.3 are low dropout three-terminal regulators with 3A output current capability. These devices have been optimized for low voltage

Contextual Info: / T * 7 T # S G S -m O M S O N * if [Li ÊM KDD(gS GALI 6V8S E2PROM CMOS PROGRAMMABLE LOGIC DEVICE HIGH PERFORMANCE SGS-THOMSON SINGLE-POLY E2PROM CMOS TECHNOLOGY - 20ns maximum propagation delay (L16V8S-20Exx) - F m a x = 41.6MHz - 15ns max. from clock input to data output

Contextual Info: L16V8Z L16V8ZD Lattice Zero Power E2CMOS PLD FEATURES FU N C TIO N AL B LO C K D IAG R AM • ZER O PO W ER E2C M O S TEC H N O LO G Y — 100|jA Standby Current — Input Transition Detection on G L16V8Z — Dedicated Pow er-dow n Pin on G L16V8ZD — Input and Output Latching During Pow er Down

Contextual Info: L16V8 Lattice' High Performance E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation Functional Block Diagram Features HIGH PERFORMANCE E2CMOS TECHNOLOGY — 3.5 ns Maximum Propagation Delay — Fmax = 250 MHz — 3.0 ns Maximum from Clock Input to Data Output

GAL16V8QS15

Abstract: 16V8QS GAL16V8QS SH 2104 20-PIN ic ir 2112 pin layout 527S49 gal programming specification opal GAL 16 v 8 D DIP
Contextual Info: Semiconductor L16V8QS-10L, -15L 20-Pin 0.8jli EECMOS PLDs General Description Features Th e EECM OS G L16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

EL16V

Abstract: 100EL16VDXC
Contextual Info: A ENHANCED DIFFERENTIAL r e V A lC D /'V SYNERGY SEMICONDUCTOR cvTnnci^RWA vc L16VA-VE H tU tlV tH DESCRIPTION FEATURES • 3.3V and 5V power supply options ■ 250ps propagation delay ■ Very high voltage gain vs. standard EL16 or L16V ■ Ideal for Pulse Amplifier and Limiting Amplifier

gal16v8d

Abstract: GAL16V8-15L gal22v10d GAL20V8-15L P20V8B-15LP GAL16V8 15LP GAL16V8D-25QP GAL20V8B-15QP DIP-24 GAL16V8D-15QP
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 MMKpocxeMbi TMna GAL b Kopnyce DIP LATTICE n o MHflMBMAyanbHOMy 3aKa3y npeflnaraeM TaKwe flpyrw e MMKpocxeMbi TMna GAL $ npM bi LATTICE. Bonee noflpo6Han MH^opMauMn - b HameM OTflene npoflaw.

GAL16V8QS

Abstract: 928 6v8a opal VD 5028 GAL programming Guide T0,8N gal16v8qs15lvc GAL16V8QS-10L gal programming algorithm AC021
Contextual Info: Semiconductor L16V8QS-10L, -15L 20-Pin 0.8 jli EECM OS PLD s General Description Features Th e EECM OS G L16V8Q S devices are fabricated using N ational’s CS80BEV 0.8|u. E lectrically Erasable C M O S pro­ cess. This advanced process m akes N ational’s

FAN1587A

Abstract: FAN1587AM FAN1587AMC FAN1587AT FAN1587AD33X
Contextual Info: www.fairchildsemi.com FAN1587A 3A Adjustable/Fixed Low Dropout Linear Regulator Features Description • • • • • • The FAN1587A, FAN1587A-1.5, and FAN1587A-3.3 are low dropout three-terminal regulators with 3A output current capability. These devices have been optimized for low voltage

S4-24V

Abstract: S2-L2-12V S3V 84 diode S3V 68 S3V Diode S-L1-24V V221S DIODE S3V 08
Contextual Info: 4 AMP POLARIZED HIGH DENSITY RELAY WITH HIGH SENSITIVITY S-RELAYS FEATURES 28.0 1.102 12.0 .472 10.4 .409 mm inch • A variety of contact arrangements 2 Form A 2 Form B, 3 Form A 1 Form B, 4 Form A • Latching types available • High sensitivity in small size 100 mW