FDMC Search Results

TC8600F

Abstract: 1126to PHOTO INTERRUPT ROTATING SPEED SENSOR 360rpm magnetic head FDD
Contextual Info: TOSHIBA INTEGRATED CIRCUIT TC8600F TECHNICAL DATA TC8600F Fl o pp y Disk Mechanism Controller INTRODUCTION The FDMC-II TC8600F is a one chip C-MOS LSI in which the control logic of FLOPPY DISK DRIVE (FDD), together with the 4-bit CPU and required random logic.

2326S

Contextual Info: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description „ Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FDMC89521L Dual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance. „ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A

FDMC8884

Abstract: -20/equivalent mosfet fdmc8884
Contextual Info: FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 mΩ Features General Description „ Max rDS on = 19 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7692

Contextual Info: FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m: Features General Description „ Max rDS on = 8.5 m: at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC4435BZ

Abstract: 63a23 05MAX00 FDMC4435B
Contextual Info: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

5614p

Abstract: FDMC5614P
Contextual Info: FDMC5614P P-Channel PowerTrench MOSFET -60V, -13.5A, 100mΩ Features tm General Description „ Max rDS on = 100mΩ at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench® process. It has been

FDMC86324

Abstract: V1318
Contextual Info: FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 mΩ Features General Description „ Max rDS on = 23 mΩ at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

v5893

Abstract: FDMC86240 33X3
Contextual Info: FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 mΩ Features General Description „ Max rDS on = 51 mΩ at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDMC6675

Abstract: A50008
Contextual Info: FDMC6675BZ P-Channel Power Trench MOSFET tm -30 V, -20 A, 14.4 mΩ Features General Description „ Max rDS on = 14.4 mΩ at VGS = -10 V, ID = -9.5 A „ HBM ESD protection level of 8 kV typical(note 3) The FDMC6675BZ has been designed to minimize losses in

FDMC7570S

Abstract: 4410 mosfet
Contextual Info: FDMC7570S N-Channel Power Trench SyncFETTM 25 V, 40 A, 2 mΩ Features General Description „ Max rDS on = 2 mΩ at VGS = 10 V, ID = 27 A The FDMC7570S has been designed to minimize losses in „ Max rDS(on) = 2.9 mΩ at VGS = 4.5 V, ID = 21.5 A power conversion application. Advancements in both silicon and

FDMC8622

Abstract: C3731
Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

Contextual Info: FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process

Contextual Info: FDMC89521L Dual N-Channel PowerTrench MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Power 33 3 mm X 3 mm MLP package. The package is enhanced for exceptional thermal performance. „ Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A

Contextual Info: FDMC8676 N-Channel tm PowerTrench MOSFET 30V, 18A, 5.9mΩ Features General Description ̈ Max rDS on = 5.9mΩ at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge

DSA0024094

Contextual Info: FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m: Features General Description This FDMC7692S is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well

Contextual Info: FDMC2610 N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mΩ Features General Description „ Max rDS on = 200mΩ at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 mΩ Features General Description „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

FDMC7680

Abstract: MO-229 148 FSC
Contextual Info: FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m: Features General Description „ Max rDS on = 7.2 m: at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC7672

Abstract: MO-229
Contextual Info: FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m: Features General Description „ Max rDS on = 5.7 m: at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.This

Contextual Info: FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 mΩ Features General Description „ Max rDS on = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

Contextual Info: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node

Contextual Info: FDMC86261P P-Channel PowerTrench MOSFET -150 V, -9 A, 160 mΩ Features General Description „ Max rDS on = 160 mΩ at VGS = -10 V, ID = -2.4 A „ Very low RDS-on mid voltage P channel silicon technology optimised for low Qg This P-Channel MOSFET is produced using Fairchild