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    FDMC8622 Search Results

    FDMC8622 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC8622
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4A POWER33 Original PDF 7
    SF Impression Pixel

    FDMC8622 Price and Stock

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    onsemi FDMC8622

    MOSFET N-CH 100V 4A/16A 8MLP
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    DigiKey () FDMC8622 Cut Tape 14,936 1
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    Mouser Electronics FDMC8622 7,522
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    onsemi FDMC8622-L701

    FDMC8622-L701
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    Fairchild Semiconductor Corporation FDMC8622

    Transistors
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    Vyrian FDMC8622 6,162
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    Win Source Electronics FDMC8622 22,638
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    FDMC8622 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMC8622

    Abstract: C3731
    Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 C3731 PDF

    Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description ̈ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 PDF

    Contextual Info: FDMC8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDMC8622 PDF

    FDMC8622

    Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m: Features General Description „ Max rDS on = 56 m: at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 PDF

    FDMC8622

    Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 PDF

    Contextual Info: FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		FDMC8622 FDMC8622 25ons PDF

    Contextual Info: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,


    Original     		WP014 PDF